INFINEON SPI08N80C3

SPI08N80C3
CoolMOSTM Power Transistor
Product Summary
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
V DS
800
V
R DS(on)max @ Tj = 25°C
0.65
Ω
45
nC
Q g,typ
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
PG-TO262-3
• Ultra low gate charge
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type
Package
Marking
SPI08N80C3
PG-TO262-3
08N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
8
T C=100 °C
5.1
Pulsed drain current2)
I D,pulse
T C=25 °C
24
Avalanche energy, single pulse
E AS
I D=1.6 A, V DD=50 V
340
Avalanche energy, repetitive t AR2),3)
E AR
I D=8 A, V DD=50 V
0.2
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Rev. 2.9
Unit
A
mJ
8
A
V DS=0…640 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
104
W
-55 ... 150
°C
page 1
2008-10-15
SPI08N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Value
Unit
8
A
T C=25 °C
Diode pulse current2)
I S,pulse
24
Reverse diode dv /dt 4)
dv /dt
4
V/ns
Parameter
Symbol Conditions
Values
Unit
min.
typ.
max.
-
-
1.2
leaded
-
-
62
1.6 mm (0.063 in.)
from case for 10s
-
-
260
°C
800
-
-
V
-
870
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
Soldering temperature,
T sold
wave soldering only allowed at leads
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Avalanche breakdown voltage
V (BR)DS
V GS=0 V, I D=8 A
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.47 mA
2.1
3
3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
-
20
V DS=800 V, V GS=0 V,
T j=150 °C
-
100
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=5.1 A,
T j=25 °C
-
0.56
0.65
Ω
V GS=10 V, I D=5.1 A,
T j=150 °C
-
1.5
-
f =1 MHz, open drain
-
1.2
-
Gate resistance
Rev. 2.9
RG
page 2
Ω
2008-10-15
SPI08N80C3
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1100
-
-
46
-
-
36
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
C o(er)
related5)
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
-
99
-
Turn-on delay time
t d(on)
-
25
-
Rise time
tr
-
15
-
Turn-off delay time
t d(off)
-
72
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
6
-
Gate to drain charge
Q gd
-
22
-
Gate charge total
Qg
-
45
60
Gate plateau voltage
V plateau
-
5.5
-
V
-
1
1.2
V
-
550
-
ns
-
7
-
µC
-
24
-
A
V DD=400 V,
V GS=0/10 V, I D=8 A,
R G=10 ? , T j=25 °C
ns
Gate Charge Characteristics
V DD=640 V, I D=8 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=I S=8 A,
T j=25 °C
V R=400 V, I F=I S=8 A,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
SPI08N80C3
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
120
limited by on-state
resistance
100
60
1 µs
100 µs
I D [A]
P tot [W]
10 µs
101
80
1 ms
DC
10 ms
100
40
20
10-1
0
0
25
50
75
100
125
1
150
10
100
1000
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
ZthJC=f(tP)
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: D=t p/T
parameter: V GS
101
30
20 V
100
20
10 V
I D [A]
Z thJC [K/W]
0.5
0.2
6.5 V
0.1
0.05
10-1
10
0.02
6V
0.01
5.5 V
single pulse
5V
10-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 2.9
0
5
10
15
20
25
V DS [V]
page 4
2008-10-15
SPI08N80C3
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C; t p=10 µs
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
3.2
12
10 V
20 V
6V
2.8
9
R DS(on) [Ω]
I D [A]
5.5 V
6
5V
2.4
2
6V
4.5 V
5V
6.5 V
5.5 V
4.5 V
3
10 V
1.6
20 V
1.2
0
0
5
10
15
20
0
25
3
6
9
12
15
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=5.1 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
1.8
30
25 °C
1.6
25
1.4
20
1
0.8
I D [A]
R DS(on) [Ω]
1.2
98 %
15
150 °C
typ
0.6
10
0.4
5
0.2
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.9
0
2
4
6
8
10
V GS [V]
page 5
2008-10-15
SPI08N80C3
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=8 A pulsed
I F=f(V SD); t p=10 µs
parameter: V DD
parameter: T j
102
10
160 V
8
25 °C
150°C (98%)
640 V
1
10
6
I F [A]
V GS [V]
150 °C
25°C (98°C)
4
100
2
10-1
0
0
10
20
30
40
0
50
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=1.6 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
960
350
920
300
880
V BR(DSS) [V]
E AS [mJ]
250
200
150
840
800
100
760
50
720
0
680
25
50
75
100
125
150
T j [°C]
Rev. 2.9
-60
-20
20
60
100
140
180
T j [°C]
page 6
2008-10-15
SPI08N80C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
9
8
Ciss
7
103
E oss [µJ]
C [pF]
6
102
Coss
5
4
3
101
2
1
Crss
100
0
0
100
200
300
400
500
V DS [V]
Rev. 2.9
0
100
200
300
400
500
600
700
800
V DS [V]
page 7
2008-10-15
SPI08N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
SPI08N80C3
PG-TO262-3: Outline
Dimensions in mm/inches
Rev. 2.9
page 9
2008-10-15
SPI08N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.9
page 10
2008-10-15