IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS®-T2 Power-Transistor Product Summary V DS 55 V R DS(on),max (SMD version) 2.7 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB100N06S3L-03 PG-TO263-3-2 3PN06L03 IPI100N06S3L-03 PG-TO262-3-1 3PN06L03 IPP100N06S3L-03 PG-TO220-3-1 3PN06L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 100 Unit A 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse2) E AS I D=50 A 2390 mJ Avalanche current, single pulse I AS 100 A Gate source voltage3) V GS ±16 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 55/175/56 page 1 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area4) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=78 A - 3.7 4.6 mΩ V GS=5 V, I D=78 A, SMD version - 3.4 4.3 V GS=10 V, I D=80 A - 2.5 3.0 V GS=10 V, I D=80 A, SMD version - 2.2 2.7 Rev. 1.1 page 2 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Parameter Symbol Values Conditions Unit min. typ. max. - 26240 - - 3290 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3140 - Turn-on delay time t d(on) - 39 - Rise time tr - 70 - Turn-off delay time t d(off) - 110 - Fall time tf - 77 - Gate to source charge Q gs - 99 - Gate to drain charge Q gd - 68 - Gate charge total Qg - 368 550 Gate plateau voltage V plateau - 3.5 - V - - 100 A - - 400 0.6 0.9 1.3 V - 140 - ns - 205 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=1.3 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed information see Application Note ANPS071E 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 1 Power dissipation 2 Drain current P tot=f(T C); V GS ≥ 4 V I D=f(T C); V GS ≥ 4 V 350 120 300 100 250 80 I D [A] P tot [W] 200 150 60 40 100 20 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs 1 ms 10-1 0.1 I D [A] Z thJC [K/W] 100 0.05 10-2 10 0.01 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.1 10-6 page 4 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 400 10 10 V 6V 3.5 V 9 8 5V 300 R DS(on) [mΩ] I D [A] 7 4.5 V 200 6 4V 5 4.5 V 4 5V 4V 6V 3 100 10 V 3.5 V 2 3V 1 0 0 0 2 4 6 8 0 20 40 60 80 100 120 140 180 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 200 5 -55 °C 25 °C 4 175 °C R DS(on) [mΩ] I D [A] 150 100 50 2 0 1 1 2 3 4 5 -60 -20 20 60 100 T j [°C] V GS [V] Rev. 1.1 3 page 5 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 3 2.5 Ciss 2300µA C [pF] V GS(th) [V] 2 1.5 230µA Coss 104 Crss 1 0.5 103 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25°C 150°C I AV [A] I F [A] 175 °C 100°C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.1 25 1 10 100 1000 t AV [µs] page 6 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 6000 66 64 25 A 5000 62 60 V BR(DSS) [V] E AS [mJ] 4000 3000 50 A 58 56 54 2000 52 100 A 50 1000 48 0 46 0 50 100 150 200 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 11 V 10 V GS 44 V Qg V GS [V] 8 6 4 2 Q gate Q gs Q gd 0 0 100 200 300 400 500 Q gate [nC] Rev. 1.1 page 7 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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Rev. 1.1 page 8 2007-11-07 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Revision History Version Date Changes Data Sheet 2.1 15.12.2006 Removal of ordering code Data Sheet 2.1 15.12.2006 Update of Infineon Logo Data Sheet 2.1 Implementation of avalanche 15.12.2006 current single pulse Data Sheet 2.1 15.12.2006 Removal of ESD class Data Sheet 2.1 15.12.2006 Update of Infineon address Data Sheet 2.1 Removal of foot note 3, avalanche 15.12.2006 diagrams Data Sheet 2.1 15.12.2006 Update of trr and Qrr typ Data Sheet 2.1 15.12.2006 Update of disclaimer Data Sheet 2.1 Implementation of RoHS and AEC 15.12.2006 logo, update of feature list Data Sheet 1.1 07.11.2007 Update of data sheet layout Data Sheet 1.1 Adaptation of Ias from 200A to 07.11.2007 100A Data Sheet 1.1 implementation of footnote 2 for 07.11.2007 Eas specification Data Sheet 1.1 removal of Vdg specification from 07.11.2007 data sheet Rev. 1.1 page 9 2007-11-07