Preliminary data BSS84PW SIPMOS Small-Signal-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · Logic Level · dv/dt rated Drain source voltage VDS Drain-source on-state resistance RDS(on) Continuous drain current ID -60 V 8 W -0.15 A 3 2 1 Type Package Ordering Code Marking BSS84PW SOT-323 Q67042-S4028 YBs VSO05561 Pin 1 PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current -0.15 A ID T A = 25 °C Pulsed drain current ID puls -0.6 Avalanche energy, single pulse EAS 2.61 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.03 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.3 W -55...+150 °C T A = 25 °C I D = -0.15 A , V DD = -25 V, RGS = 25 W mJ kV/µs I S = -0.15 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2000-04-14 Preliminary data BSS84PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 110 @ min. footprint - - 420 @ 6 cm 2 cooling area 1) - - 350 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -20 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain-source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10.5 25 W RDS(on) - 6.9 12 RDS(on) - 4.6 8 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -2.7 V, I D = -0.01 A Drain-source on-state resistance VGS = -4.5 V, I D = -0.12 A Drain-source on-state resistance VGS = -10 V, ID = -0.15 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2000-04-14 Preliminary data BSS84PW Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.16 - S pF Dynamic Characteristics Transconductance g fs V DS£2*ID*R DS(on)max , ID=0.15A Input capacitance Ciss V GS=0V, VDS=-25V, - 15.3 19.1 Output capacitance Coss f=1MHz - 5.8 7.3 Reverse transfer capacitance Crss - 3 3.8 Turn-on delay time t d(on) - 6.7 10 Rise time tr - 16.2 24.3 Turn-off delay time t d(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.38 - 0.3 0.45 - 1 1.5 V(plateau) V DD=-48V, ID=-0.15A - -3.4 - IS - - - - V DD=-30V, V GS=-4.5V, ID=-0.12A, RG=25W ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=-48V, I D=-0.15A V DD=-48V, I D=-0.15A, nC V GS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous T A=25°C -0.15 A forward current Inverse diode direct current, I SM -0.6 pulsed Inverse diode forward voltage VSD V GS=0V, IF=-0.15A - -0.84 -1.12 V Reverse recovery time t rr V R=-30V, I F=l S, - 23.6 35.4 ns Reverse recovery charge Q rr diF/dt=100A/µs - 11.6 17.4 nC Page 3 2000-04-14 Preliminary data BSS84PW Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS 0.32 -0.16 W A 0.24 -0.12 0.20 -0.10 0.16 -0.08 0.12 -0.06 0.08 -0.04 0.04 -0.02 0.00 0 20 ³ 10 V BSS84PW ID Ptot BSS84PW 40 60 80 100 120 °C 0.00 0 160 20 40 60 80 100 120 TA TA Safe operating area Transient thermal impedance I D = f ( V DS ) ZthJA = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T 1 BSS84PW -10 160 °C 10 3 BSS84PW A K/W -10 0 Z thJC tp = 40.0µs ID 100 µs /I D -10 = -1 RD S( on V 1 ms DS ) 10 2 10 ms D = 0.50 0.20 10 1 0.10 0.05 -10 -2 0.02 single pulse DC -10 -3 -1 -10 -10 0 -10 1 V -10 2 VDS 10 0 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 0.01 10 1 s 10 3 tp Page 4 2000-04-14 Preliminary data BSS84PW Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs RDS(on) = f (ID ) parameter: VGS BSS84PW A BSS84PW 26 Ptot = 0W g f W VGS [V] a -2.5 e -0.28 d ID -0.24 -0.20 -0.16 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -6.0 a b c d 22 20 RDS(on) -0.36 18 16 14 12 c 10 -0.12 8 6 b -0.08 4 -0.04 2 a 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V e g VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g -6.0 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -5.0 f VDS -0.30 ID Typ. transfer characteristics I D= f ( V GS ) VDS³ 2 x I D x RDS(on)max Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs parameter: tp = 80 µs -0.30 0.22 S A 0.18 gfs ID 0.16 -0.20 0.14 0.12 -0.15 0.10 0.08 -0.10 0.06 0.04 -0.05 0.02 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 VGS Page 5 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 ID 2000-04-14 Preliminary data BSS84PW Drain-source on-resistance Gate threshold voltage RDS(on) = f(Tj) VGS(th) = f (Tj) parameter: ID = -0.17A, V GS = -10 V parameter: VGS = VDS , ID = -20 µA -2.5 16 W 12 V GS(th) RDS(on) V max. 10 max. -1.5 typ. -1.0 min. 8 6 typ. 4 -0.5 2 0 -60 -20 20 60 100 0.0 -60 160 °C Tj -20 20 60 100 180 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 2 -10 0 BSS84PW A pF -10 -1 C IF Ciss 10 1 Coss Crss -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 V -30 VDS -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 6 2000-04-14 Preliminary data BSS84PW Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.15 A pulsed par.: ID = -0.15 A , VDD = -25 V, R GS = 25 W BSS84PW 3.0 -16 V mJ VGS E AS -12 2.0 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1.0 -4 0.5 -2 0.0 25 45 65 85 105 125 165 °C Tj 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS84PW -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Page 7 2000-04-14 Preliminary data BSS84PW Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2000-04-14