SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS(on) 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427 Marking 2N0640 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 29 TC=100°C 20 ID puls 116 EAS 80 Repetitive avalanche energy, limited by Tjmax 1) EAR 6.8 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 68 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =25A, VDD =25V, RGS =25 mJ kV/µs IS =25A, VDS =44V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature Tj , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2002-06-10 SPD25N06S2-40 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.45 2.2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =26µA Zero gate voltage drain current µA IDSS VDS =55V, VGS =0V, Tj=25°C - 0.01 1 VDS =55V, VGS =0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 30 40 m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =13A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-06-10 SPD25N06S2-40 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 8.5 17 - S pF Dynamic Characteristics Transconductance gfs V DS2*ID*R DS(on)max, ID=20A Input capacitance Ciss V GS=0V, VDS=25V, - 534 710 Output capacitance Coss f=1MHz - 138 180 Reverse transfer capacitance Crss - 40 60 Turn-on delay time td(on) V DD=30V, V GS=10V, - 8.8 13 Rise time tr ID=25A, - 24 36 Turn-off delay time td(off) - 24 36 Fall time tf - 23 35 - 3 4 - 6 8 - 13 18 V(plateau) V DD=44V, I D=25A - 5.7 - V IS - - 29 A - - 116 R G=22 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=44V, I D=25A V DD=44V, I D=25A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed I SM Inverse diode forward voltage VSD V GS=0V, IF=25A - 0.9 1.3 V Reverse recovery time t rr V R=30V, IF=lS, - 31 40 ns Reverse recovery charge Q rr diF/dt=100A/µs - 40 50 nC Page 3 2002-06-10 SPD25N06S2-40 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 75 parameter: VGS 10 V SPD25N06S2-40 32 SPD25N06S2-40 W A 60 24 50 ID Ptot 55 45 40 20 16 35 30 12 25 20 8 15 10 4 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 SPD25N06S2-40 SPD25N06S2-40 K/W A /I D 10 0 = 10 µs 10 -1 R DS (o n ) ID Z thJC DS tp = 7.5µs V 10 2 D = 0.50 10 10 100 µs 1 -2 0.20 0.10 0.05 10 -3 1 ms 0.02 single pulse 0.01 10 ms 10 0 10 -1 10 0 10 1 DC V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-06-10 SPD25N06S2-40 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 120 60 A m Vgs = 7.5V Vgs = 10V 50 100 Vgs = 7V 40 RDS(on) ID 45 Vgs = 6.5V 35 30 90 Vgs=5V Vgs=5.5V Vgs=6V Vgs=6.5V Vgs=7V Vgs=7.5V Vgs=10V 80 70 Vgs = 6V 25 60 20 Vgs = 5.5V 50 15 0.5 1 1.5 2 2.5 3 3.5 4 20 0 V 5 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs S 40 16 35 14 30 10 20 8 15 6 10 4 5 2 4 5 6 60 12 25 3 A 40 parameter: gfs A 2 30 gfs = f(ID ); Tj=25°C 20 1 20 8 Typ. forward transconductance 50 0 0 10 ID g fs ID 30 Vgs = 4.5V 5 0 0 40 Vgs = 5V 10 0 0 8 V VGS Page 5 4 8 12 16 20 24 32 A ID 2002-06-10 SPD25N06S2-40 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = 13 A, VGS = 10 V parameter: VGS = VDS 4 90 m V V GS(th) RDS(on) 70 60 98 % 130 A 3 50 26 A 40 2.5 typ. 30 20 2 10 0 -60 -20 20 60 100 °C 1.5 -60 180 -20 20 60 100 Tj °C 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) I F = f (VSD) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF SPD25N06S2-40 A 10 3 10 2 C IF Ciss Coss 10 2 10 1 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-06-10 SPD25N06S2-40 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (Q Gate) parameter: ID = 29 A pulsed par.: ID=25A, V DD = 25 V, RGS = 25 80 16 mJ V 12 VGS 60 E AS SPD25N06S2-40 50 40 8 30 6 20 4 10 2 0 25 45 65 85 105 125 145 °C 185 Tj 0,2 VDS max 10 0 0 2 4 6 8 10 12 0,8 VDS max 14 16 nC 19 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 66 SPD25N06S2-40 V (BR)DSS V 62 60 58 56 54 52 50 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-06-10 SPD25N06S2-40 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD25N06S2-40, for simplicity the device is referred to by the term SPD25N06S2-40 throughout this documentation. Page 8 2002-06-10