Preliminary data BSP308 SIPMOS Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS(on) Enhancement mode • Logic Level Continuous drain current VDS ID 30 V 0.05 Ω 4.7 A • dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin 2/4 PIN 3 BSP308 SOT-223 Q67000-S4011 G D S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value ID Continuous drain current Unit A T A = 25 °C 4.7 T A = 70 °C 3.9 ID puls 18.8 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55...+150 °C Pulsed drain current T A = 25 °C Reverse diode dv/dt kV/µs I S = 4.7 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 1999-09-22 Preliminary data BSP308 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W K/W @ min. footprint - - 110 @ 6 cm 2 cooling area 1) - - 70 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS I D = 20 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 250 µA µA VDS = 30 V, V GS = 0 V, Tj = 25 °C - 0.1 1 VDS = 30 V, V GS = 0 V, Tj = 125 °C - 10 100 IGSS - 10 100 nA RDS(on) - 0.05 0.075 Ω RDS(on) - 0.03 0.05 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 3.9 A Drain-Source on-state resistance VGS = 10 V, I D = 4.7 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data BSP308 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 6.1 8.8 - S Ciss - 400 500 pF Coss - 160 200 Crss - 70 90 td(on) - 16 24 tr - 30 45 td(off) - 16 24 tf - 15 23 Dynamic Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 3.9 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Rise time VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Turn-off delay time VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Fall time VDD = 15 V, VGS = 4.5 V, I D = 3.9 A , RG = 15 Ω Page 3 1999-09-22 Preliminary data BSP308 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 1.9 2.9 Qgd - 5.4 8.1 Qg - 14.5 22 V(plateau) - 3.1 - Dynamic Characteristics Gate to source charge nC VDD = 24 V, ID = 4.7 A Gate to drain charge VDD = 24 V, ID = 4.7 A Gate charge total VDD = 24 V, ID = 4.7 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 24 V , I D = 4.7 A Parameter Symbol Values Unit min. typ. max. IS - - 4.7 ISM - - 18.8 VSD - 0.84 1.1 V trr - 38.4 57.6 ns Qrr - 22.3 33.5 nC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = 4.7 A Reverse recovery time VR = 15 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-09-22 Preliminary data BSP308 Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) BSP308 BSP308 1.9 5.5 W A 4.5 1.4 4.0 1.2 3.5 ID Ptot 1.6 3.0 1.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0 20 40 60 80 100 °C 120 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJA = f(tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T BSP308 10 2 /I D A = 10 1 RD S n (o V D BSP308 K/W tp = 160.0µs S ) 10 1 Z thJA 10 2 160 ID 1 ms 10 ms 10 0 10 0 D = 0.50 0.20 0.10 10 -1 0.05 10 -1 0.02 single pulse DC 10 -2 -1 10 10 0 10 1 0.01 V 10 2 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 1999-09-22 Preliminary data BSP308 Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSP308 12 BSP308 0.16 Ptot = 1.80W b A VGS [V] a 2.0 likjg hfed 9 ID 8 c 7 6 5 4 3 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 l 10.0 RDS(on) 10 c Ω 0.12 0.10 0.08 0.06 d e f hj i lkg 0.04 b 2 0.02 VGS [V] = b 2.5 1 c 3.0 d 3.5 e f 4.0 4.5 2.0 3.0 g 5.0 h i 5.5 6.0 j 7.0 k l 8.0 10.0 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0.0 5.0 1.0 4.0 5.0 7.0 A 6.0 VDS 8.5 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS≥ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 10 12 S A 10 8 9 gfs ID 7 6 8 7 5 6 4 5 4 3 3 2 2 1 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VGS 0 0 1 2 3 4 5 6 7 A 9 ID Page 6 1999-09-22 Preliminary data BSP308 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = 4.7 , V GS = 10 V parameter: VGS = VDS , ID = 20 µA BSP308 0.12 3.0 Ω V 0.10 VGS(th) RDS(on) 2.4 0.09 0.08 0.07 2.0 typ 1.8 1.6 98% 0.06 98% 2.2 2% 1.4 0.05 1.2 0.04 1.0 typ 0.8 0.03 0.6 0.02 0.4 0.01 0.00 -60 0.2 -20 20 60 °C 100 0.0 -60 180 -20 20 60 °C 100 Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode C = f(V DS) IF = f (VSD ) parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 BSP308 A Ciss pF IF 10 1 C Coss 10 2 Crss 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Page 7 1999-09-22 Preliminary data BSP308 Typ. gate charge Drain-source breakdown voltage VGS = f (Q Gate) parameter: ID = 4.7 A pulsed V(BR)DSS = f (Tj ) BSP308 BSP308 37 16 V V V(BR)DSS 35 VGS 12 10 34 33 32 8 0,2 VDS max 6 0,8 VDS max 31 30 4 29 2 0 0 28 2 4 6 8 10 12 14 16 27 -60 18nC 21 QGate -20 20 60 100 °C 180 Tj Page 8 1999-09-22 Preliminary data BSP308 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-09-22