MICROSEMI JTDB25

JTDB25
25 Watts, 36 Volts, Pulsed
Avionics, 960-1215 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55AW-1
The JTDB25 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25ºC1
Maximum Voltage and Current
BVCES
BVEBO
IC
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
97W
55V
3.5V
5.0A
-65 to +200ºC
+200ºC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTICS
BVEBO
BVCES
hFE
θJC1
Emitter – Base Breakdown
Collector – Emitter Breakdown
DC – Current Gain
Thermal Resistance
TEST CONDITIONS
IE = 5 mA
IC = 10 mA
IC = 500mA, VCE = 5V
MIN
TYP
MAX
3.5
55
20
UNITS
V
V
1.8
ºC/W
5
W
W
FUNCTIONAL CHARACTERISTICS @ 25°C
Pout
Power Output
Pin
Power Input
Gain
Power Gain
RL
Return Loss
VSWR 2
Load Mismatch Tolerance
NOTES: 1. At Rated Pulse Conditions
2. At Rated Output Power
F=960-1215 MHz
Vcc = 36V
Pulse width = 10µs
DF=40%
F = 1090 MHz
25
7.0
8
7.5
dB
5:1
Rev A: Dec 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.