JTDB25 25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The JTDB25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25ºC1 Maximum Voltage and Current BVCES BVEBO IC Maximum Temperatures Storage Temperature Operating Junction Temperature 97W 55V 3.5V 5.0A -65 to +200ºC +200ºC ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS BVEBO BVCES hFE θJC1 Emitter – Base Breakdown Collector – Emitter Breakdown DC – Current Gain Thermal Resistance TEST CONDITIONS IE = 5 mA IC = 10 mA IC = 500mA, VCE = 5V MIN TYP MAX 3.5 55 20 UNITS V V 1.8 ºC/W 5 W W FUNCTIONAL CHARACTERISTICS @ 25°C Pout Power Output Pin Power Input Gain Power Gain RL Return Loss VSWR 2 Load Mismatch Tolerance NOTES: 1. At Rated Pulse Conditions 2. At Rated Output Power F=960-1215 MHz Vcc = 36V Pulse width = 10µs DF=40% F = 1090 MHz 25 7.0 8 7.5 dB 5:1 Rev A: Dec 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.