USB508 U

USB50803 – USB50824
Available
Unidirectional Low Capacitance TVSarray
DESCRIPTION
This USB50803 – USB50824 family of Transient Voltage Suppressor (TVS) arrays is packaged in
an SO-8 configuration giving protection to 2 unidirectional data or interface lines. It is designed for
use in applications where very low capacitance protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2,
electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning.
Using the schematic on the last page, pins 7 & 8 are tied together for the first protected positive
line, and pins 1 & 2 are tied together to the ground. The same would then occur where pins 5 & 6
are tied together for a second protected positive line and pins 2 & 3 are tied together to the ground.
If protecting a negative line with respect to ground, these may be switched in polarity connections
where the pins are tied together in this manner for unidirectional protection.
These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse. This array is
suitable for protection of sensitive circuitry such as TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC
microprocessors, Universal Serial Bus (USB) and I/O transceivers.
SO-8 Package
Also available:
Bidirectional version
(with opposite polarity in
each leg)
USB50803C(-A) –
USB50824C(-A)
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
Provides electrically isolated protection for up to 2 unidirectional lines.
Surge protection per IEC 61000-4-2 and IEC 61000-4-4.
UL 94V-0 flammability classification.
Ultra low capacitance; 3 pF per line pair.
Ultra low leakage current.
RoHS compliant versions available.
APPLICATIONS / BENEFITS
•
•
•
EIA-RS485 data rates: 5 Mbs
10 Base T Ethernet.
USB data rate: 900 Mbs
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power @ 8/20 µs (see figure 1)
Impulse Repetition Rate
Capacitance (f = 1 MHz) @ 0 V
Solder Temperature @ 10 s
Symbol
TJ and TSTG
P PP
df
C
TSP
Value
-55 to +150
500
< .01
3
260
Unit
ºC
W
%
pF
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 1 of 4
USB50803 – USB50824
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Molded SO-8 surface mount.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating.
MARKING: Logo, device marking code (see electrical characteristics table), date code.
POLARITY: Pin #1 marked by dot on top of package.
TAPE & REEL option: Per EIA standard 481. Consult factory for quantities. Carrier tubes with a quantity of 95 pieces are
standard.
WEIGHT: 0.066 grams (approximate).
See Package Dimensions on last page.
PART NOMENCLATURE
USB
5
08
03
e3
USB Rated Product
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
P PP Rating (x 100 W)
8 Pin Package
Rated Standoff Voltage (V WM )
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Symbol
V WM
V (BR)
VC
ID
C
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
V WM must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse
time of 20 µs.
Standby Current: Leakage current at V WM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
ELECTRICAL CHARACTERISTICS
PART
NUMBER
DEVICE
MARKING*
STANDOFF
VOLTAGE
V WM
BREAKDOWN
VOLTAGE
V (BR)
@1 mA
Volts
CLAMPING
VOLTAGE
VC
@ 5 Amp
(Figure 2)
Volts
STANDBY
CURRENT
ID
@ V WM
CAPACITANCE
(f = 1 MHz)
C
@0V
TEMPERATURE
COEFFICIENT
OF V (BR)
α VBR
Volts
CLAMPING
VOLTAGE
VC
@ 1 Amp
(Figure 2)
Volts
µA
pF
mV/°C
USB50803
USB50805
AF
AG
MAX
3.3
5.0
MIN
4
6.0
MAX
8
10.8
MAX
11
13
MAX
200
20
MAX
3
3
MAX
-5
1
USB50812
USB50815
USB50824
AH
AJ
AK
12.0
15.0
24.0
13.3
16.7
26.7
19
24
43
26
32
57
1
1
1
3
3
3
8
11
28
* Device marking has an e3 suffix added for the RoHS compliant option, e.g. AFe3, AGe3, AHe3, AJe3, and AKe3.
NOTE: Transient Voltage Suppressor (TVS) products are normally selected based on their standoff voltage Vwm. The selected
voltage should be equal to or greater than the peak operating voltage of the circuit to be protected.
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 2 of 4
USB50803 – USB50824
PPP – Peak Pulse Power - W
GRAPHS
t p - Pulse Duration - µs
IPP – Peak Pulse Current - %IPP
FIGURE 1
Peak Pulse Power vs Pulse Time
t – Time in microseconds
FIGURE 2
Pulse Waveform
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 3 of 4
USB50803 – USB50824
PACKAGE DIMENSIONS
Ltr
A
B
C
D
F
G
J
K
L
P
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.188
0.197
4.77
5.00
0.150
0.158
3.81
4.01
0.053
0.069
1.35
1.75
0.011
0.021
0.28
0.53
0.0160 0.050 0.041
1.27
0.050 BSC
1.27 BSC
0.006
0.010
0.15
0.25
0.004
0.008
0.10
0.20
0.189
0.206
4.80
5.23
0.228
0.244
5.79
6.19
PAD LAYOUT / SCHEMATIC
1.
2. PAD LAYOUT:
3.
4.
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 4 of 4