USB50803 – USB50824 Available Unidirectional Low Capacitance TVSarray DESCRIPTION This USB50803 – USB50824 family of Transient Voltage Suppressor (TVS) arrays is packaged in an SO-8 configuration giving protection to 2 unidirectional data or interface lines. It is designed for use in applications where very low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning. Using the schematic on the last page, pins 7 & 8 are tied together for the first protected positive line, and pins 1 & 2 are tied together to the ground. The same would then occur where pins 5 & 6 are tied together for a second protected positive line and pins 2 & 3 are tied together to the ground. If protecting a negative line with respect to ground, these may be switched in polarity connections where the pins are tied together in this manner for unidirectional protection. These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse. This array is suitable for protection of sensitive circuitry such as TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, Universal Serial Bus (USB) and I/O transceivers. SO-8 Package Also available: Bidirectional version (with opposite polarity in each leg) USB50803C(-A) – USB50824C(-A) Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • Provides electrically isolated protection for up to 2 unidirectional lines. Surge protection per IEC 61000-4-2 and IEC 61000-4-4. UL 94V-0 flammability classification. Ultra low capacitance; 3 pF per line pair. Ultra low leakage current. RoHS compliant versions available. APPLICATIONS / BENEFITS • • • EIA-RS485 data rates: 5 Mbs 10 Base T Ethernet. USB data rate: 900 Mbs MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Peak Pulse Power @ 8/20 µs (see figure 1) Impulse Repetition Rate Capacitance (f = 1 MHz) @ 0 V Solder Temperature @ 10 s Symbol TJ and TSTG P PP df C TSP Value -55 to +150 500 < .01 3 260 Unit ºC W % pF o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01092-2, Rev. A (10/29/13) ©2013 Microsemi Corporation Page 1 of 4 USB50803 – USB50824 MECHANICAL and PACKAGING • • • • • • • CASE: Molded SO-8 surface mount. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. MARKING: Logo, device marking code (see electrical characteristics table), date code. POLARITY: Pin #1 marked by dot on top of package. TAPE & REEL option: Per EIA standard 481. Consult factory for quantities. Carrier tubes with a quantity of 95 pieces are standard. WEIGHT: 0.066 grams (approximate). See Package Dimensions on last page. PART NOMENCLATURE USB 5 08 03 e3 USB Rated Product RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant P PP Rating (x 100 W) 8 Pin Package Rated Standoff Voltage (V WM ) (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V WM V (BR) VC ID C Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range. V WM must be selected to be equal or be greater than the operating voltage of the line to be protected. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse time of 20 µs. Standby Current: Leakage current at V WM. Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. ELECTRICAL CHARACTERISTICS PART NUMBER DEVICE MARKING* STANDOFF VOLTAGE V WM BREAKDOWN VOLTAGE V (BR) @1 mA Volts CLAMPING VOLTAGE VC @ 5 Amp (Figure 2) Volts STANDBY CURRENT ID @ V WM CAPACITANCE (f = 1 MHz) C @0V TEMPERATURE COEFFICIENT OF V (BR) α VBR Volts CLAMPING VOLTAGE VC @ 1 Amp (Figure 2) Volts µA pF mV/°C USB50803 USB50805 AF AG MAX 3.3 5.0 MIN 4 6.0 MAX 8 10.8 MAX 11 13 MAX 200 20 MAX 3 3 MAX -5 1 USB50812 USB50815 USB50824 AH AJ AK 12.0 15.0 24.0 13.3 16.7 26.7 19 24 43 26 32 57 1 1 1 3 3 3 8 11 28 * Device marking has an e3 suffix added for the RoHS compliant option, e.g. AFe3, AGe3, AHe3, AJe3, and AKe3. NOTE: Transient Voltage Suppressor (TVS) products are normally selected based on their standoff voltage Vwm. The selected voltage should be equal to or greater than the peak operating voltage of the circuit to be protected. RF01092-2, Rev. A (10/29/13) ©2013 Microsemi Corporation Page 2 of 4 USB50803 – USB50824 PPP – Peak Pulse Power - W GRAPHS t p - Pulse Duration - µs IPP – Peak Pulse Current - %IPP FIGURE 1 Peak Pulse Power vs Pulse Time t – Time in microseconds FIGURE 2 Pulse Waveform RF01092-2, Rev. A (10/29/13) ©2013 Microsemi Corporation Page 3 of 4 USB50803 – USB50824 PACKAGE DIMENSIONS Ltr A B C D F G J K L P Dimensions Inch Millimeters Min Max Min Max 0.188 0.197 4.77 5.00 0.150 0.158 3.81 4.01 0.053 0.069 1.35 1.75 0.011 0.021 0.28 0.53 0.0160 0.050 0.041 1.27 0.050 BSC 1.27 BSC 0.006 0.010 0.15 0.25 0.004 0.008 0.10 0.20 0.189 0.206 4.80 5.23 0.228 0.244 5.79 6.19 PAD LAYOUT / SCHEMATIC 1. 2. PAD LAYOUT: 3. 4. RF01092-2, Rev. A (10/29/13) ©2013 Microsemi Corporation Page 4 of 4