AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM Datasheet

AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor
Surface Mount Fast Avalanche Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
®
eSMP Series
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
DO-220AA (SMP)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
IFSM
30 A, 25 A
trr
140 ns, 120 ns
VF
1.15 V, 1.4 V
IR
1 μA
EAS
20 mJ
TJ max.
175 °C
Package
DO-220AA (SMP)
Diode variation
Single die
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
AR1PD
AR1PG
AR1PJ
AR1PK
AR1PM
ARD
ARG
ARJ
ARK
ARM
200
400
600
800
1000
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy
at IAS = 1.0 A, TA = 25 °C
EAS
20
mJ
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
1.0
30
V
A
25
A
Revision: 23-Feb-16
Document Number: 89289
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
AR1PD
AR1PG
AR1PJ
AR1PK
AR1PM
1.25
1.6
1.15
1.4
UNIT
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
140
120
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
12.5
8.5
pF
VF (1)
TA = 125 °C
TA = 25 °C
1.0
IR (2)
TA = 125 °C
V
μA
100
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
AR1PD
AR1PG
AR1PJ
RJA (1)
132
RJM (1)
15
AR1PK
AR1PM
UNIT
°C/W
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
JA - junction to ambient, RJM - junction to mount at the terminal
cathode band
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
AR1PJ-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
AR1PJ-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
AR1PJHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
AR1PJHM3/85A
BASE QUANTITY
DELIVERY MODE
Note
Automotive grade
(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
Resistive or Inductive Load
AR1PD thru AR1PJ
AR1PD thru AR1PJ
1.0
0.8
AR1PK thru AR1PM
0.6
0.4
0.2
D = 0.5
D = 0.2
0.8
D = 1.0
D = 0.1
0.6
T
0.4
0.2
TM Measured
at Mount of Terminal
0
100
D = 0.8
D = 0.3
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
D = tp/T
tp
0.8
1.0
0
110
120
130
140
150
160
170
180
0
0.2
0.4
0.6
1.2
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Feb-16
Document Number: 89289
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor
1000
1.4
D = 0.3
1.2
Average Power Loss (W)
D = 0.8
D = 0.5
Instantaneous Reverse Current (μA)
AR1PK thru AR1PM
D = 0.2
1.0
D = 1.0
D = 0.1
0.8
0.6
T
0.4
0.2
D = tp/T
tp
0
0.2
10
TA = 75 °C
1
TA = 25 °C
0.1
AR1PD thru AR1PJ
0.4
0.8
0.6
1.0
1.2
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Characteristics
10
TA = 175 °C
TA = 125 °C
1
TA = 75 °C
0.1
TA = 25 °C
AR1PD thru AR1PJ
0.01
0.3
TA = 175 °C
100
TA = 125 °C
10
TA = 75 °C
1
0.1
TA = 25 °C
AR1PK thru AR1PM
0.01
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
10
20
30
40
50
60
70
80
90
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Characteristics
100
100
10
Junction Capacitance (pF)
TA = 175 °C
1
TA = 125 °C
TA = 75 °C
0.1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
AR1PD thru AR1PJ
AR1PK thru AR1PM
AR1PK thru AR1PM
0.01
0.3
100
1000
Instantaneous Reverse Current (μA)
Instantaneous Forward Current (A)
TA = 125 °C
0.01
0
Instantaneous Forward Current (A)
TA = 175 °C
100
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
1
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
100
Revision: 23-Feb-16
Document Number: 89289
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AR1PD, AR1PG, AR1PJ, AR1PK, AR1PM
www.vishay.com
Vishay General Semiconductor



Transient Thermal Impedance (°C/W)
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 23-Feb-16
Document Number: 89289
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000