INFINEON BSC011N03LS

n-Channel Power MOSFET
OptiMOS™
BSC011N03LS
Data Sheet
2.0, 2011-03-01
Preliminary
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSC011N03LS
1
Description
OptiMOS™30V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 30V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
Optimized for high performance buck converters
100% avalanche tested
Very low on-resistance RDS(on) @ VGS=4.5 V
N-channel
Qualified according to JEDEC1) for target applications
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
VDS
30
V
IFX OptiMOS webpage
RDS(on),max
1.1
mΩ
IFX OptiMOS product brief
ID
100
A
IFX OptiMOS spice models
QOSS
40
nC
IFX Design tools
Qg.typ
72
Type
Package
Marking
BSC011N03LS
PG-TDSON-8
011N03LS
1) J-STD20 and JESD22
Preliminary Data Sheet
1
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
A
VGS=10 V, TC=25 °C
Min.
Typ.
Max.
-
-
100
-
-
100
VGS=10 V, TC=100 °C
-
-
100
VGS=4.5 V, TC=25 °C
-
-
100
VGS=4.5 V, TC=100 °C
-
-
37
VGS=10 V, TA=25 °C,
RthJA=50 K/W1))
ID,pulse
-
-
400
TC=25 °C
Avalanche current, single pulse
IAS
-
-
50
Avalanche energy, single pulse
EAS
-
-
190
mJ
Gate source voltage
VGS
-20
-
20
V
Power dissipation
Ptot
-
-
96
W
-
-
2.5
-55
-
150
Continuous drain current
ID
Pulsed drain current2)
3)
Operating and storage temperature
Tj,Tstg
ID=50 A,RGS=25 Ω
TC=25 °C
TA=25 °C, RthJA=50 K/W1))
°C
IEC climatic category; DIN IEC 68-1
55/150/56
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Values
Unit
Min.
Typ.
Max.
-
-
1.3
-
-
20
Note /
Test Condition
K/W
top
Device on PCB
RthJA
50
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air
Preliminary Data Sheet
2
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
30
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=1.0 mA
Gate threshold voltage
VGS(th)
1
-
2.2
Zero gate voltage drain current
IDSS
-
0.1
1
-
10
100
-
10
100
nA
VGS=20 V, VDS=0 V
-
1.1
1.4
mΩ
VGS=4.5 V, ID=30 A,
-
0.9
1.1
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VDS=VGS, ID=250 µA
VDS=30 V, VGS=0 V,
Tj=125 °C
VGS=10 V, ID=30 A,
Gate resistance
RG
-
0.6
-
Ω
Transconductance
gfs
85
170
-
S
Table 5
VDS=30 V, VGS=0 V,
Tj=25 °C
µA
|VDS|>2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
4700
-
Output capacitance
Coss
-
1500
-
Reverse transfer capacitance
Crss
-
220
-
Turn-on delay time
td(on)
-
6.7
-
Rise time
tr
-
8.8
-
Turn-off delay time
td(off)
-
37
-
Fall time
tf
-
6.2
-
Preliminary Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=15 V,
f=1 MHz
ns
VDD=15 V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
nC
VDD=15 V,
ID=30 A,
VGS=0 to 4.5 V
Gate to source charge
Qgs
-
11
-
Gate charge at threshold
Qg(th)
-
7.5
-
Gate to drain charge
Qgd
-
10.3
-
Switching charge
Qsw
-
14
-
Gate charge total
Qg
-
36
-
Gate plateau voltage
Vplateau
-
2.4
-
V
Gate charge total
Qg
-
72
-
nC
Gate charge total, sync. FET
Qg(sync)
-
29
-
VDS=0.1 V,
VGS=0 to 4.5 V
Output charge
Qoss
-
40
-
VDD=15 V, VGS=0 V
VDD=15 V,
ID=30 A,
VGS=0 to 10V
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
A
TC=25 °C
Diode continuous forward current
Is
-
-
96
Diode pulse current
IS,pulse
-
-
384
Diode forward voltage
VSD
-
0.8
1
V
VGS=0 V, IF=30 A,
Tj=25 °C
Reverse recovery charge
Qrr
-
20
-
nC
VR=15 V, IF=Is,
dIF/dt=400 A/µs
Preliminary Data Sheet
4
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Preliminary Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Preliminary Data Sheet
6
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS; ID=250 µA
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Preliminary Data Sheet
7
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Preliminary Data Sheet
8
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Package outline
6
Package outline
Figure 1
Outlines PG-TDSON-8, dimensions in mm/inches
Preliminary Data Sheet
9
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Package outline
Figure 2
Outlines PG-TDSON-8 tape, dimension in mm/inches
Preliminary Data Sheet
10
2.0, 2011-03-01
OptiMOS™ Power-MOSFET
BSC011N03LS
Revision History
7
Revision History
Revision History: 2011-03-01, 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
0.4
Release of Target data sheet
1.0
Release of Preliminary data sheet
2.0
Release of Final data sheet
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Edition 2011-03-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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Preliminary Data Sheet
11
2.0, 2011-03-01