IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G ™ "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R ) AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 .( K +&, Z" 1( 6 AC6G:@FD 6? 8:? 66C:? 8 D2 > A= 6 4@56D ?FF(,eD(.B ?F?(,eD(.B ?F7(,eD(.B R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' R/ 6CJ = @H @? C6D:DE 2 ? 46 , 9I"\[# R ( 492 ? ? 6= = @8:4 = 6G6= R 2 G2 = 2 ? 496 E6DE 65 R * 3 7C66 A= 2E :? 8 , @" - 4@> A= :2 ? E R + F2 = :7:65 2 44@C5:? 8 E@ $ )# 7@CE2 C86E2 AA= :42 E:@? D R" 2 = @86? 7C66 2 44@C5:? 8 E@ # Type #* ( & ! #* # ( & ! #* * ( & ! Package F=%JE%*.+%+ F=%JE%*.*%+ F=%JE%**(%+ Marking (+,D(.B (+/D(.B (+/D(.B Maximum ratings, 2 ET W U F? = 6DD @E96CH:D6 DA64:7:65 Parameter Symbol Conditions @? E :? F@FD 5C 2 :? 4FCC6? E I9 T 8 U *# Value 1( T 8 U 1( Unit 6 * F= D65 5C2 :? 4FCC6? E+# I 9$]bY`R T 8 U +.( G2 = 2 ? 496 6? 6C8J D:? 8= 6 AF= D6,# E 6I I 9 R =I " ).- Z@ !2 E6 D@FC46 G@= E2 86 V =I r*( K * @H6C5:DD:A2 E:@? P a\a )./ L ) A6C2 E:? 8 2 ? 5 DE@C 2 86 E6> A6C2 EFC6 T W T `aT U T 8 U # 4= :> 2 E :4 42 E68@CJ #( # )# *# $ - . 2 ? 5 $ - FC C 6? E:D = :> :E65 3 J 3 @? 5H:C 6 H:E9 2 ? R aU@8 % 0 E 96 49:A :D 2 3 = 6 E@ 42 C C J +# - 66 7:8FC 6 7@C> @C 6 56E 2 := 65 :? 7@C > 2 E:@? ,# - 66 7:8FC 6 7@C> @C 6 56E 2 := 65 :? 7@C >2 E :@? , 6G A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. % % (&1 % % ,( .( % % )&* )&/ *&* Thermal characteristics .96C> 2 =C6D:DE2 ? 46 ;F? 4E:@? 42 D6 R aU@8 .96C> 2 =C6D:DE2 ? 46 R aU@6 ;F? 4E :@? 2 > 3 :6? E > :? :> 2 =7@@EAC:? E 4> W 4@@= :? 8 2 C62 -# A'L Electrical characteristics, 2 ET W U F? = 6DD @E96CH:D6 DA64:7:65 Static characteristics C2 :? D@FC46 3 C62 <5@H? G@= E2 86 V "7H#9II V =I / I 9 > !2 E6 E9C6D9@= 5 G@= E2 86 V =I"aU# V 9I4V =I I 9 X 16C@ 82 E6 G@= E2 86 5C 2 :? 4FCC6? E I 9II V 9I / V =I / T W U % (&) ) V 9I / V =I / T W U % )( )(( K t6 !2 E6D@FC46 = 62 <2 86 4FCC6? E I =II V =I / V 9I / % ) )(( [6 C2 :? D@FC46 @? DE2 E6 C6D:DE2 ? 46 R 9I"\[# V =I / I 9 % +&( +&/ Z" V =I / I 9 "IC9# % *&/ +&, V =I / I 9 % +&1 -&/ V =I / I 9 "IC9# % +&. -&, % )&+ % " // )-+ % I C2 :? D@FC46 @? DE2 E6 C6D:DE2 ? 46 R 9I"\[# !2 E6 C6D:DE 2 ? 46 R= J_N[`P\[QbPaN[PR g S` -# 6G:46 @? > > I > > I > > 6A@IJ * 4@? ? 64E :@? * :D G6C E:42 =:? DE := =2 :C , 6G hV 9Ih5*hI 9hR 9I"\[#ZNe I 9 , H:E9 4>* @? 6 = 2 J6C X> E 9:4< 4@AA6C2 C 62 7@C5C 2 :? A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Parameter Values Symbol Conditions Unit min. typ. max. % )(((( )+((( ]< % )/(( *+(( Dynamic characteristics #? AFE42 A2 4:E2 ? 46 C V`` V =I / V 9I / f ' " K ) FEAFE42 A2 4:E2 ? 46 C \`` , 6G6CD6 EC2 ? D76C42 A2 4:E2 ? 46 C _`` % /( % .FC? @? 56= 2 J E:> 6 t Q"\[# % *- % , :D6 E:> 6 t_ % /0 % .FC? @7756= 2 J E:> 6 t Q"\SS# % ., % tS % )+ % !2 E6 E@ D@FC46 492 C86 Q T` % +, % !2 E6 E@ 5C2 :? 492 C86 Q TQ % )) % % *1 % 2= =E:> 6 V 99 / V =I / I 9 R = " [` !2 E6 92 CT6 92 C2 4E6C:DE :4D.# V 99 / I 9 V =I E@ / [8 - H:E49:? 8 492 C86 Q `d !2 E6 492 C86 E@E 2= QT % -1 /1 !2 E6 A= 2 E62 F G@= E 2 86 V ]YNaRNb % +&, % ) FEAFE492 C86 Q \`` % 0+ ))( [8 % % 1( 6 % % +.( % (&1- )&* K % ,, % [` % .. % [8 V 99 / V =I / K Reverse Diode :@56 4@? E:? @FD 7@CH2 C5 4FCC 6? E II :@56 AF= D6 4FCC 6? E I I$]bY`R :@56 7@CH2 C5 G@= E2 86 V I9 , 6G6CD6 C64@G6CJ E:> 6 t __ , 6G6CD6 C64@G6CJ 492 C 86 Q __ .# , 6G T 8 U V =I / I < T W U V H / I <4I I Qi <'Qt XD - 66 7:8FC 6 7@C82 E6 492 C 86 A2 C2 > 6E6C567:? :E :@? A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 1 Power dissipation 2 Drain current P a\a4S"T 8# I 94S"T 8 V =I" / 100 160 80 120 60 I D [A] P tot [W] 200 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I 94S"V 9I T 8 U D 4( Z aU@84S"t ]# A2 C2 > 6E6C t ] A2 C2 > 6E6C D 4t ]'T 103 100 = :> :E65 3 J @? DE2 E 6 _R`V`aN[PR XD (&- XD 102 XD (&* 10 1 Z thJC [K/W] I D [A] >D >D 98 (&) 10 -1 (&((&(* (&() D:? 8= 6 AF= D6 100 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] , 6G 10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94S"V 9I T W U R 9I"\[#4S"I 9 T W U A2 C 2 > 6E6C V =I A2 C2 > 6E6C V =I 320 / / 15 / / / / / 12 240 R DS(on) [m ] I D [A] / 160 9 6 / / / 80 / 3 )(K / 0 0 0 1 2 3 4 5 0 50 100 V DS [V] 150 / 200 250 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94S"V =I L V 9Ih5*hI 9hR 9I"\[#ZNe g S`4S"I 9 T W U A2 C 2 > 6E6C T W 320 200 160 240 g fs [S] I D [A] 120 160 80 80 40 U U 0 0 0 1 2 3 4 5 , 6G 0 50 100 150 I D [A] V GS [V] A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9I"\[#4S"T W I 9 V =I / V =I"aU#4S"T W V =I4V 9I A2 C2 > 6E6C I9 8 2.5 7 2 6 5 V GS(th) [V] R DS(on) [m ] X ZNe 4 af] 1.5 X 1 3 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9I V =I / f ' " K I <4S"V I9# A2 C2 > 6E6C TW 105 103 8V`` 10 4 U 102 U U I F [A] C [pF] 8\`` 103 U 101 8_`` 102 101 100 0 20 40 60 V DS [V] , 6G 0 0.5 1 1.5 2 V SD [V] A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 13 Avalanche characteristics 14 Typ. gate charge I 6I4S"t 6K R =I " V =I4S"Q TNaR I 9 AF= D65 A2 C 2 > 6E6C T W"`aN_a# A2 C2 > 6E6C V 99 1000 12 / 10 / 100 / V GS [V] I AS [A] 8 U U 6 U 10 4 2 1 0 1 10 100 1000 0 50 100 150 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7H"9II#4S"T W I 9 > 65 V =I Qg V BR(DSS) [V] 60 V T `"aU# 55 Q T "aU# Q `d Q T` 50 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-220-3 , 6G A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-262-3 (I²-Pak) , 6G A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G PG-TO-263 (D²-Pak) , 6G A2 86 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G A2 86