IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS™3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 150 V R DS(on),max (TO263) 7.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 072N15N 075N15N 075N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 100 T C=100 °C 93 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 780 Reverse diode dv /dt dv /dt I D=100 A, V DS=120 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 6 Unit A mJ kV/µs ±20 V 300 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.06 page 1 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area 3) - - 40 150 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=120 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A, (TO220, TO262) - 6.2 7.5 mΩ V GS=10 V, I D=100 A, (TO263) - 5.8 7.2 V GS=8 V, I D=50 A, (TO220; TO262) - 6.4 7.7 V GS=8 V, I D=50 A, (TO263) - 6.0 7.4 - 2.3 - Ω 65 130 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.06 page 2 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 5470 - - 638 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 10 - Turn-on delay time t d(on) - 25 38 Rise time tr - 35 52 Turn-off delay time t d(off) - 46 69 Fall time tf - 14 21 Gate to source charge Q gs - 30 40 Gate to drain charge Q gd - 11 17 - 25 35 V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=100 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=75 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 70 93 Gate plateau voltage V plateau - 5.5 - Output charge Q oss - 179 239 nC - - 100 A - - 400 - 1 1.2 V - 146 - ns - 478 - nC V DD=75 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=75 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.06 page 3 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 320 120 280 100 240 80 I D [A] P tot [W] 200 160 60 120 40 80 20 40 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 10 µs 100 µs 102 0.5 Z thJC [K/W] I D [A] 1 ms 10 ms 101 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse 10-2 10-1 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 2.06 10-5 page 4 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 350 15 8V 10 V 5V 300 5.5 V 7V 6.5 V 250 10 6V R DS(on) [mΩ] I D [A] 200 6V 150 8V 10 V 5 100 5.5 V 50 5V 4.5 V 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 140 150 120 g fs [S] I D [A] 100 100 80 60 50 40 25 °C 175 °C 20 0 0 0 2 4 6 8 Rev. 2.06 0 40 80 120 160 I D [A] V GS [V] page 5 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 2700 µA 15 3 10 V GS(th) [V] R DS(on) [mΩ] 270 µA 2.5 98% 2 1.5 typ 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 102 103 175 °C I F [A] C [pF] 25°C, 98% Coss 175°C, 98% 101 102 Crss 101 0 20 40 60 100 80 100 0 0.5 1 1.5 2 V SD [V] V DS [V] Rev. 2.06 25 °C page 6 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 10 120 V 8 75 V 100 25 °C 30 V V GS [V] I AS [A] 6 100 °C 4 125 °C 10 2 1 0 1 10 100 1000 0 20 40 60 80 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 170 V GS Qg 165 V BR(DSS) [V] 160 155 150 V g s(th) 145 Q g(th) 140 Q sw Q gs 135 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.06 page 7 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO220-3: Outline Rev. 2.06 page 8 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO263-3: Outline Rev. 2.06 page 9 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO262-3: Outline Rev. 2.06 page 10 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.06 page 11 2010-04-19