BSC190N15NS3 G OptiMOS™3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 150 V R DS(on),max 19 mΩ ID 50 A • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC190N15NS3 G Package PG-TDSON-8 Marking 190N15NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 50 T C=100 °C 33 Unit A Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 170 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 125 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/175/56 page 1 2009-11-04 BSC190N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1 - - 50 150 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA 6 cm2 cooling area 3) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=120 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 16 19 mΩ V GS=8 V, I D=25 A - 16 20 - 2.4 - Ω 29 57 - S Gate resistance RG Transconductance g fs 1) 2) |V DS|>2|I D|R DS(on)max, I D=50 A J-STD20 and JESD22 See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2009-11-04 BSC190N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1820 2420 - 214 285 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 5 - Turn-on delay time t d(on) - 15 - Rise time tr - 53 - Turn-off delay time t d(off) - 25 - Fall time tf - 6 - Gate to source charge Q gs - 10 - Gate to drain charge Q gd - 4 - - 9 - V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=50 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=75 V, I D=50 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 23 31 Gate plateau voltage V plateau - 5.7 - Output charge Q oss - 60 79 nC - - 50 A - - 200 - 1 1.2 V - 130 - ns - 385 - nC V DD=75 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.4 T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=75 V, I F=I S, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2009-11-04 BSC190N15NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 150 60 125 40 I D [A] P tot [W] 100 75 50 20 25 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 10 µs 102 100 µs 100 101 10 ms 0.2 0.1 10 DC 10 0.5 Z thJC [K/W] I D [A] 1 ms -1 0.05 0 0.02 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.4 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-11-04 BSC190N15NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 40 10 V 5V 35 8V 5.5 V 6V 7V 6V 30 R DS(on) [mΩ] I D [A] 60 40 5.5 V 20 25 20 8V 10 V 15 10 5V 5 4.5 V 0 0 0 0 1 2 3 4 5 0 20 V DS [V] 40 60 80 120 160 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 80 60 60 I D [A] g fs [S] 100 40 40 20 20 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 2.4 0 40 80 I D [A] V GS [V] page 5 2009-11-04 BSC190N15NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 60 4 55 3.5 50 900 µA 45 3 90 µA 2.5 35 V GS(th) [V] R DS(on) [mΩ] 40 30 25 98% 2 1.5 20 typ 15 1 10 0.5 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 102 25 °C I F [A] C [pF] Coss 102 175 °C 25°C, 98% 101 101 175°C, 98% Crss 100 0 20 40 60 80 100 Rev. 2.4 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2009-11-04 BSC190N15NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=50A pulsed parameter: T j(start) parameter: V DD 100 10 120 V 8 75 V 25 °C 30 V 10 6 V GS [V] I AS [A] 100 °C 125 °C 4 2 1 0 1 10 100 1000 0 5 10 15 20 25 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 170 V GS Qg 165 V BR(DSS) [V] 160 155 150 V g s(th) 145 Q g(th) 140 Q sw Q gs 135 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.4 page 7 2009-11-04 BSC190N15NS3 G PG-TDSON-8 Outline Rev. 2.4 page 8 2009-11-04 BSC190N15NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 9 2009-11-04