IPB080N06N G OptiMOS® Power-Transistor IPP080N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS(on),max • N-channel enhancement - normal level SMDversion ID 60 V 7.7 mΩ 80 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPB080N06N G IPP080N06N G Package P-TO263-3-2 P-TO220-3-1 Marking 080N06N 080N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 80 T C=100 °C 76 Pulsed drain current I D,pulse T C=25 °C2) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 448 Reverse diode dv /dt dv /dt I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 214 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 107 A. 2) See figure 3 Rev. 1.01 Unit page 1 2006-05-02 IPB080N06N G Parameter IPP080N06N G Values Symbol Conditions Unit min. typ. max. - - 0.7 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A, - 6.5 8 mΩ V GS=10 V, I D=80 A, SMD version - 6.2 7.7 - 1.5 - Ω 47 94 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-05-02 IPB080N06N G Parameter IPP080N06N G Values Symbol Conditions Unit min. typ. max. - 2600 3500 - 660 880 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 160 240 Turn-on delay time t d(on) - 14 20 Rise time tr - 15 23 Turn-off delay time t d(off) - 32 50 Fall time tf - 14 20 Gate to source charge Q gs - 14 19 Gate charge at threshold Q g(th) - 8 10 Gate to drain charge Q gd - 29 43 Switching charge Q sw - 35 52 Gate charge total Qg - 70 93 Gate plateau voltage V plateau - 5.4 - Output charge Q oss 26 35 - - 80 - - 320 - 0.91 1.3 V - 53 65 ns - 85 110 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=3.3 Ω pF ns Gate Charge Characteristics4) V DD=30 V, I D=80 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-05-02 IPB080N06N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V IPP080N06N G 90 250 80 200 70 60 I D [A] P tot [W] 150 50 40 100 30 20 50 10 0 0 0 50 100 150 0 200 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs limited by on-state resistance 10 µs 0.5 100 µs 102 1 ms Z thJC [K/W] I D [A] DC 10 ms 101 0.2 10-1 0.1 0.05 0.02 100 0.01 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.01 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-05-02 IPB080N06N G IPP080N06N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 240 220 28 10 V 20 V 26 7V 200 24 6.5 V 180 22 R DS(on) [mΩ] 140 I D [A] 5V 20 160 6V 120 100 5.5 V 18 16 14 6V 12 10 80 5.5V 6.5 V 8 60 7V 10 V 6 40 20 V 4 5V 20 2 0 0 0 1 2 3 4 0 5 20 40 V DS [V] 60 80 100 120 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 100 120 80 100 60 g fs [S] I D [A] 80 60 40 40 20 20 175 °C 25 °C 0 0 0 1 2 3 4 5 6 7 V GS [V] Rev. 1.01 0 20 40 60 80 I D [A] page 5 2006-05-02 IPB080N06N G IPP080N06N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 1500 µA 15 3 10 V GS(th) [V] R DS(on) [mΩ] 150 µA 2.5 98 % 2 1.5 typ 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 175°C 98% 25 °C 2 10 175 °C I F [A] C [pF] Ciss 103 25°C 98% 101 Coss 100 Crss 102 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.01 0 0.5 1 1.5 2 2.5 V SD [V] page 6 2006-05-02 IPB080N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 102 IPP080N06N G 12 25 °C 30 V 100 °C 10 12 V 150 °C 48 V V GS [V] I AV [A] 8 101 6 4 2 100 0 100 101 102 103 0 20 t AV [µs] 40 60 80 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.01 page 7 2006-05-02 IPB080N06N G IPP080N06N G PG-TO-263 (D²-Pak) PG-TO-263 (D²-Pak) Rev. 1.01 page 8 2006-05-02 IPB080N06N G IPP080N06N G PG-TO220-3: Outline Rev. 1.01 page 9 2006-05-02 IPB080N06N G IPP080N06N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 2006-05-02