FM120 S~FM1100 S(SMA S)

WILLAS
FM120-M+
)026
THRU
THRU
.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SM$6 PACKAGE
SOD-123+ PACKAGE
FM1200-M+
)006
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Package outline
optimize board space.
Features
• Low power loss, high efficiency.
0.146(3.7)
SMA-S0.130(3.3)
design,
excellent
dissipation
offers
• Batch• process
High current
capability,
lowpower
forward
voltage drop.
better
reverse
leakage
current and thermal resistance.
surge
capability.
• High
surface
application
in order to
• Low •profile
Guardring
for mounted
overvoltage
protection.
optimize board space.
• Ultra high-speed switching.
• Low power loss, high efficiency.
• Silicon epitaxial planar chip, metal silicon junction.
• High current capability, low forward voltage drop.
• Lead-free parts meet environmental standards of
capability. /228
• High surge
MIL-STD-19500
for
overvoltage
protection.
• Guardring
for packing
code suffix "G"
• RoHS product
switching.
• Ultra high-speed
Halogen free product for packing code suffix "H"
epitaxial planar chip,
metal silicon junction.
• Silicon
Mechanical
data
• Lead-free parts meet environmental standards of
• Epoxy : UL94-V0
MIL-STD-19500
/228 rated flame retardant
• Pb-Free
package
is available
: Molded
plastic, SOD-123H
• Case
,
RoHS• product
for
packing
code suffixsolderable
”G”
Terminals :Plated terminals,
per MIL-STD-750
0.012(0.3) Typ.
0.213(5.4)
0.197(5.0)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.063(1.6)
0.106(2.7)
0.091(2.3)
0.055(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
0.071(1.8)
0.060(1.5)
Halogen free product
for packing
Method
2026 code suffix “H”
0.040(1.0) Typ.
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Epoxy:UL94-V0 rated flame retardant
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
• Case : Molded plastic, DO-214AC / SMA-S
• Terminals : Solder
plated, RATINGS
solderable per
MAXIMUM
AND ELECTRICAL CHARACTERISTICS
Mechanical data
Methodunless
2026 otherwise specified.
Ratings at 25℃MIL-STD-750,
ambient temperature
Single
phase
half wave,by
60Hz,
resistive
of inductive load.
: Indicated
cathode
band
• Polarity
For
capacitivePosition
load, derate
: Anycurrent by 20%
• Mounting
RATINGS
• Weight : Approximated
0.05 gram
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
13
14
15
16
28
35 Symbol
42
40
50
18
10
120
200
V
UNIT
105
140
V
1001.0
A
150
200
V
30
A
Maximum
otherwise
noted)
20
30
40(AT T A =25
50 C unless
60
80
100
Maximum
Recurrent ratings
Peak Reverseand
VoltageElectrical
VRRMCharacteristics
VRMS
PARAMETER
Maximum RMS
Voltage
Maximum
DC Blocking
Voltage
Forward
rectified
current
See Fig.1 VDC
CONDITIONS
14
21
20
30
Maximum Average Forward Rectified Current8.3ms singleIOhalf sine-wave superimposed on
Forward surge current
rate load (JEDEC
methode)
Peak Forward Surge Current 8.3 ms single half sine-wave
FSM
I
V R = V RRM T J = 25 OC
superimposed
rated load (JEDEC method)
Reverseoncurrent
O
V R = V RRM RTΘJA
J = 100 C
Typical Thermal Resistance (Note 2)
f=1MHz and applied 4V DC reverse
voltage
Diode junction capacitance
Typical Junction Capacitance (Note 1)
CJ
Storage
temperature
-55 to +125
Operating
Temperature
Range
TJ
Storage Temperature Range
SYMBOLS
TSTG
*1
*3
V RMS*2
VR
V RRM
CHARACTERISTICS
(V)
(V)
(V)
Maximum Forward Voltage at 1.0A DC
FM120-S
20
14
20
FM130-S
30
21
30
FM140-S
40
28
NOTES:
FM150-S
50
35
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50IR
I O 60
I FSM
IR
CJ
T STG
80
1.0
30
40
120
-65
0.5
10
120
+175
-55 to +150
A
A
mA
℃
pF
O
C
- 65 to +175
0.5
*1 Repetitive peak reverse voltage
10
*2 RMS voltage
m
50
FM160-S
FM180-S
80
56
80
FM1100-S
100
70
100
2012-09
-55 to +125
40
2- Thermal Resistance From Junction to Ambient
2012-06
MIN.56 TYP. 70MAX.
115
150
Operating
*4
VF
temperature
SYMBOL FM120-MH
(V)
T J, ( OC)FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
0.92
VF
0.50
0.70
0.85
0.70
1- Measured at 1 MHZ60
and applied
60 of 4.0 VDC.
42reverse voltage
o
0.85
*3 Continuous reverse voltage
-55 to +150
*4 Maximum forward voltage@I F =1.0A
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
)026
THRUTHRU
.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SM$6 PACKAGE
SOD-123+ PACKAGE
FM1200-M+
)006
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Rating and characteristic curves
0.2
0
0
20
40
60
80
Method 2026
100
140
120
160
180
200
LEAD TEMPERATURE,(°C)
RATINGS
0S
~F
M
14
TJ=25 C
Dimensions in inches and (millimeters)
Pulse Width 300us
1% Duty Cycle
0.1
.01
.1
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
NUMBER OF CYCLES AT 60Hz
superimposed on rated load (JEDEC method)
.5
.7
CJ
FIG.4-TYPICAL JUNCTION CAPACITANCE
TJ
-55 to +125
Operating Temperature Range
TSTG
300
CHARACTERISTICS
1.1
1.3
1.5
VF
Maximum
Average Reverse Current at @T A=25℃
200
0.50
IR
@T A=125℃
Rated DC Blocking Voltage
18
80
42
10
100
56
70
115
150
120
200
V
105
140
V
150
200
V
1.0
CHARACTERISTICS
30
A
40
120
10
A
℃
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
250
Maximum
Forward Voltage at 1.0A DC
150
NOTES:
100
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.0
0.70
0.85
TJ=75 C
0.5
0.9
0.92
V
m
10
.1
Tj=25 C
2- Thermal Resistance From Junction to Ambient
50
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
2012-06
2012-09
.9
FIG.5
60- TYPICAL
80 REVERSE
100
Typical Junction Capacitance (Note 1)
Storage Temperature Range
16
60
100
RΘJA
Typical Thermal Resistance (Note 2)
JUNCTION CAPACITANCE,(pF)
.3
FORWARD VOLTAGE,(V)
12
20
VRRM
0.031(0.8) Typ.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Recurrent Peak Reverse Voltage
1.0
-S
00
Sine Wave
Marking Code
11
FM
S~
0
18
FM
0.031(0.8) Typ.
J
Ratings at 25℃ ambient temperature unless otherwise specified.
JEDEC method
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
350
0.040(1.0)
0.024(0.6)
8.3ms
Single ELECTRICAL
Half
MAXIMUM
AND
CHARACTERISTICS
T =25RATINGS
C
REVERSE LEAKAGE CURRENT, (mA)
PEAK FORWARD SURGE CURRENT,(A)
• Polarity : Indicated by cathode band
• Mounting Position : Any
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
• Weight : Approximated
gram
SURGE0.011
CURRENT
3.0
0S
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
FM
12
0S
Mechanical data
0.071(1.8)
0.056(1.4)
50
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
F
M
15
0S
~F
M
16
0.4
CHARACTERISTICS
-S
00
11
FM
S~
015
FM
-S
40
0.6
•
0.012(0.3) Typ.
FIG.2-TYPICAL FORWARD
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
0.146(3.7)
0.130(3.3)
1
FM
S~
012
FM
AVERAGE FORWARD CURRENT,(A)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1.2 • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
1.0
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
)026
THRU
THRU
.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
-20V- 200V
SM$6 PACKAGE
SOD-123+ PACKAGE
FM1200-M+
)006
Pb Free Product
Package outline
Features
process design, excellent power dissipation offers
• Batchinformation
Pinning
better reverse leakage current and thermal resistance.
to
• Low profile
Pinsurface mounted application in order
Simplified
optimize board space.
• Low power loss, high efficiency.
capability, low forward voltage drop.
• High current
Pin1
cathode
• High surge capability.
1
Pin2
anode
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Marking
SOD-123H
outline
Symbol
0.146(3.7)
0.130(3.3)
2
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
Mechanical data
Type
: UL94-V0 rated flame retardant Marking code
• Epoxynumber
0.040(1.0)
0.024(0.6)
: Molded plastic, SOD-123H
• Case
FM120-S
SK12 ,
• Terminals
:Plated terminals, solderable per MIL-STD-750
FM130-S
SK13
Method 2026
FM140-S
• Polarity
: Indicated by cathode band
FM150-S
Position : Any
• Mounting
FM160-S
• Weight
: Approximated 0.011 gram
FM180-S
FM1100-S
0.031(0.8) Typ.
SK14
SK15
SK16
SK18
S110
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Suggested solder
RATINGS pad layout
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20 C
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
A
superimposed on rated load (JEDEC method)
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
B
Storage Temperature Range
40
120
-55 to +125
A
A
℃
P
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
0.50
0.70
Rated DC Blocking Voltage
IR
@T A=125℃
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
Dimensions in inches and (millimeters)
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
PACKAGE
SMA-S
2012-06
2012-09
A
B
C
0.063 (1.60)
0.059 (1.50)
0.110 (2.80)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.