WILLAS FM120-M+ )026 THRU THRU .0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SM$6 PACKAGE SOD-123+ PACKAGE FM1200-M+ )006 Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Package outline optimize board space. Features • Low power loss, high efficiency. 0.146(3.7) SMA-S0.130(3.3) design, excellent dissipation offers • Batch• process High current capability, lowpower forward voltage drop. better reverse leakage current and thermal resistance. surge capability. • High surface application in order to • Low •profile Guardring for mounted overvoltage protection. optimize board space. • Ultra high-speed switching. • Low power loss, high efficiency. • Silicon epitaxial planar chip, metal silicon junction. • High current capability, low forward voltage drop. • Lead-free parts meet environmental standards of capability. /228 • High surge MIL-STD-19500 for overvoltage protection. • Guardring for packing code suffix "G" • RoHS product switching. • Ultra high-speed Halogen free product for packing code suffix "H" epitaxial planar chip, metal silicon junction. • Silicon Mechanical data • Lead-free parts meet environmental standards of • Epoxy : UL94-V0 MIL-STD-19500 /228 rated flame retardant • Pb-Free package is available : Molded plastic, SOD-123H • Case , RoHS• product for packing code suffixsolderable ”G” Terminals :Plated terminals, per MIL-STD-750 0.012(0.3) Typ. 0.213(5.4) 0.197(5.0) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.063(1.6) 0.106(2.7) 0.091(2.3) 0.055(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 0.071(1.8) 0.060(1.5) Halogen free product for packing Method 2026 code suffix “H” 0.040(1.0) Typ. 0.040 (1.0) Typ. Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Epoxy:UL94-V0 rated flame retardant Dimensions in inches and (millimeters) • Weight : Approximated 0.011 gram • Case : Molded plastic, DO-214AC / SMA-S • Terminals : Solder plated, RATINGS solderable per MAXIMUM AND ELECTRICAL CHARACTERISTICS Mechanical data Methodunless 2026 otherwise specified. Ratings at 25℃MIL-STD-750, ambient temperature Single phase half wave,by 60Hz, resistive of inductive load. : Indicated cathode band • Polarity For capacitivePosition load, derate : Anycurrent by 20% • Mounting RATINGS • Weight : Approximated 0.05 gram SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 12 13 14 15 16 28 35 Symbol 42 40 50 18 10 120 200 V UNIT 105 140 V 1001.0 A 150 200 V 30 A Maximum otherwise noted) 20 30 40(AT T A =25 50 C unless 60 80 100 Maximum Recurrent ratings Peak Reverseand VoltageElectrical VRRMCharacteristics VRMS PARAMETER Maximum RMS Voltage Maximum DC Blocking Voltage Forward rectified current See Fig.1 VDC CONDITIONS 14 21 20 30 Maximum Average Forward Rectified Current8.3ms singleIOhalf sine-wave superimposed on Forward surge current rate load (JEDEC methode) Peak Forward Surge Current 8.3 ms single half sine-wave FSM I V R = V RRM T J = 25 OC superimposed rated load (JEDEC method) Reverseoncurrent O V R = V RRM RTΘJA J = 100 C Typical Thermal Resistance (Note 2) f=1MHz and applied 4V DC reverse voltage Diode junction capacitance Typical Junction Capacitance (Note 1) CJ Storage temperature -55 to +125 Operating Temperature Range TJ Storage Temperature Range SYMBOLS TSTG *1 *3 V RMS*2 VR V RRM CHARACTERISTICS (V) (V) (V) Maximum Forward Voltage at 1.0A DC FM120-S 20 14 20 FM130-S 30 21 30 FM140-S 40 28 NOTES: FM150-S 50 35 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50IR I O 60 I FSM IR CJ T STG 80 1.0 30 40 120 -65 0.5 10 120 +175 -55 to +150 A A mA ℃ pF O C - 65 to +175 0.5 *1 Repetitive peak reverse voltage 10 *2 RMS voltage m 50 FM160-S FM180-S 80 56 80 FM1100-S 100 70 100 2012-09 -55 to +125 40 2- Thermal Resistance From Junction to Ambient 2012-06 MIN.56 TYP. 70MAX. 115 150 Operating *4 VF temperature SYMBOL FM120-MH (V) T J, ( OC)FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 0.92 VF 0.50 0.70 0.85 0.70 1- Measured at 1 MHZ60 and applied 60 of 4.0 VDC. 42reverse voltage o 0.85 *3 Continuous reverse voltage -55 to +150 *4 Maximum forward voltage@I F =1.0A WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ )026 THRUTHRU .0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SM$6 PACKAGE SOD-123+ PACKAGE FM1200-M+ )006 Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Rating and characteristic curves 0.2 0 0 20 40 60 80 Method 2026 100 140 120 160 180 200 LEAD TEMPERATURE,(°C) RATINGS 0S ~F M 14 TJ=25 C Dimensions in inches and (millimeters) Pulse Width 300us 1% Duty Cycle 0.1 .01 .1 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave NUMBER OF CYCLES AT 60Hz superimposed on rated load (JEDEC method) .5 .7 CJ FIG.4-TYPICAL JUNCTION CAPACITANCE TJ -55 to +125 Operating Temperature Range TSTG 300 CHARACTERISTICS 1.1 1.3 1.5 VF Maximum Average Reverse Current at @T A=25℃ 200 0.50 IR @T A=125℃ Rated DC Blocking Voltage 18 80 42 10 100 56 70 115 150 120 200 V 105 140 V 150 200 V 1.0 CHARACTERISTICS 30 A 40 120 10 A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 250 Maximum Forward Voltage at 1.0A DC 150 NOTES: 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.0 0.70 0.85 TJ=75 C 0.5 0.9 0.92 V m 10 .1 Tj=25 C 2- Thermal Resistance From Junction to Ambient 50 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 2012-06 2012-09 .9 FIG.5 60- TYPICAL 80 REVERSE 100 Typical Junction Capacitance (Note 1) Storage Temperature Range 16 60 100 RΘJA Typical Thermal Resistance (Note 2) JUNCTION CAPACITANCE,(pF) .3 FORWARD VOLTAGE,(V) 12 20 VRRM 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Recurrent Peak Reverse Voltage 1.0 -S 00 Sine Wave Marking Code 11 FM S~ 0 18 FM 0.031(0.8) Typ. J Ratings at 25℃ ambient temperature unless otherwise specified. JEDEC method Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 350 0.040(1.0) 0.024(0.6) 8.3ms Single ELECTRICAL Half MAXIMUM AND CHARACTERISTICS T =25RATINGS C REVERSE LEAKAGE CURRENT, (mA) PEAK FORWARD SURGE CURRENT,(A) • Polarity : Indicated by cathode band • Mounting Position : Any FIG.3-MAXIMUM NON-REPETITIVE FORWARD • Weight : Approximated gram SURGE0.011 CURRENT 3.0 0S • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 10 FM 12 0S Mechanical data 0.071(1.8) 0.056(1.4) 50 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" F M 15 0S ~F M 16 0.4 CHARACTERISTICS -S 00 11 FM S~ 015 FM -S 40 0.6 • 0.012(0.3) Typ. FIG.2-TYPICAL FORWARD INSTANTANEOUS FORWARD CURRENT,(A) 0.8 0.146(3.7) 0.130(3.3) 1 FM S~ 012 FM AVERAGE FORWARD CURRENT,(A) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE • Guardring for overvoltage protection. • Ultra high-speed switching. 1.2 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 1.0 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ )026 THRU THRU .0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 00V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SM$6 PACKAGE SOD-123+ PACKAGE FM1200-M+ )006 Pb Free Product Package outline Features process design, excellent power dissipation offers • Batchinformation Pinning better reverse leakage current and thermal resistance. to • Low profile Pinsurface mounted application in order Simplified optimize board space. • Low power loss, high efficiency. capability, low forward voltage drop. • High current Pin1 cathode • High surge capability. 1 Pin2 anode • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Marking SOD-123H outline Symbol 0.146(3.7) 0.130(3.3) 2 0.012(0.3) Typ. 1 2 0.071(1.8) 0.056(1.4) Mechanical data Type : UL94-V0 rated flame retardant Marking code • Epoxynumber 0.040(1.0) 0.024(0.6) : Molded plastic, SOD-123H • Case FM120-S SK12 , • Terminals :Plated terminals, solderable per MIL-STD-750 FM130-S SK13 Method 2026 FM140-S • Polarity : Indicated by cathode band FM150-S Position : Any • Mounting FM160-S • Weight : Approximated 0.011 gram FM180-S FM1100-S 0.031(0.8) Typ. SK14 SK15 SK16 SK18 S110 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Suggested solder RATINGS pad layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 C 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave A superimposed on rated load (JEDEC method) 1.0 30 RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ B Storage Temperature Range 40 120 -55 to +125 A A ℃ P -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 0.50 0.70 Rated DC Blocking Voltage IR @T A=125℃ 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ Dimensions in inches and (millimeters) 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient PACKAGE SMA-S 2012-06 2012-09 A B C 0.063 (1.60) 0.059 (1.50) 0.110 (2.80) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.