WILLAS
FM120-M+
FFM101L
THRU
1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
THRU
FM1200-M+
FFM107L
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SMA-LS
PACKAGE
SOD-123+
PACKAGE
MCC
Features
power dissipation offers
•
Features
Batch
process
design, excellentand
thermal resistance.
better
reverse
leakage current
omponents
• Low
profile
surface
mounted application
in order
toChatsworth
20736
Marilla
Street
Micro Commercial Components
Package outline
ES2A-L
Package
outline
THRUSOD-123H
ES2J-LSMA-LS
TM
• Batch
process
power dissipation offers
optimize
boarddesign,
space.excellent
reverse
leakage
current and thermal resistance.
Low power
loss,
high efficiency.
• better
!"#
••Low
surface
mounted
application
in order
Highprofile
current
capability,
low forward
drop.to
$
% voltage
!"#
board space.
High surge capability.
•optimize
••High
current capability.
Guardring for overvoltage protection.
Features
Fast switching for high efficiency.
•
• •Lead
Compliant(Note 1) ("P" Suffix designates
high-speed
Ultra
Free
Finish/RoHS
switching.
High
capability.
Compliant.
See
ordering
information)
••RoHS
Silicon
surge
epitaxial
current
planar
chip, metal
silicon junction.
Lead-free
passivated
parts
UL
meet
Glass
chip
junction.
• ••Epoxy
meets
94
V-0environmental
flammability rating
standards of
• • Moisture
Sensitivity
Level 1
MIL-STD-19500
/228
• Pb-Free
package
is available
RoHS product
for packing
codeunder
suffix 35ns
"G"
x •Super
fast switching
speed
x
2 Amp Super Fast
Recovery Rectifier
50 to 600 Volts
Halogen free product
for packing code suffix "H"
Mechanical
data
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.106(2.7)
0.091(2.3)
0.040(1.0)
0.024(0.6)
DO-214AC
(SMA) (LEAD FRAME)
• Operating Temperature: -65к to +175к
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
• • Storage
Temperature: -65к to +175к
0.068(1.7)
,
0.060(1.5)
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
H
Mechanical data
Maximum DC
Maximum
MCC
Method
2026
0.032(0.8) Typ.
0.032 (0.8) Typ.
Epoxy:UL94-V0
rated flame retardant
•Part
Maximum
Blocking
Recurrent
Number
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
RMS Voltage
Voltage
Reverse
• Case : MoldedPeak
plastic,
JEDEC DO-214AC
/ SMA-LS
J
: Any
• Mounting Position
Voltage
• Terminals
:
Solder
plated,
solderable
per
50V 0.011 gram35V
50V
Dimensions in inches and (millimeters)
• ES2A-L
Weight : Approximated
MIL-STD-750,
Method 70V
2026
ES2B-L
100V
100V
ES2D-L : Indicated
200V
140V
200V
by
cathode band
• Polarity
MAXIMUM
RATINGS
AND
ELECTRICAL
CHARACTERISTICS
ES2G-L
400V
280V
400V
A
C
• Mounting
Position
: Any
Ratings
at
25℃ ambient
temperature
unless420V
otherwise specified.
ES2J-L
600V
600V
Single
half
wave, 60Hz, resistive
of Unless
inductiveOtherwise
load.
•phase
Weight
: Approximated
0.05
gram
E
Electrical
Characteristics
@ 25°C
Specified
D
B
F
For capacitive
derate current
by 20% 2.0A
Average load,
Forward
IF(AV)
TL= 110к
o
Current
G FM150-MH
Maximum
ratings and Electrical
Characteristics
(AT T AFM160-MH
=25 C unless
otherwise
noted)
FM130-MH FM140-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
RATINGS
Peak Forward Surge
IFSM
50A
8.3ms, half sine
DIMENSIONS
MAX. UNIT
Symbol
MIN. 10 TYP. 115
PARAMETER
CONDITIONS
Marking
Code
12
13
14
15
16
18
120
Current
INCHES
MM
DIM 40 MIN
MIN
NOTE100
30
50MAX
60
150
200
Maximum
Recurrent
Peakrectified
Reverse current
Voltage
Volts
VRRM
1.0
I OMAX80
A
Forward
See
Fig.2 20
Maximum
A
.079
.096
2.00
2.44
B
.050
.064
1.27
1.63
Instantaneous
Volts
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
V
RMS
.002
.008 on
.05
.20
8.3ms single half sine-wave Csuperimposed
30
I FSM.51
A
ForwardForward
Voltagesurge current
D
--.02
--Volts
rate
load (JEDEC
methode)
Maximum DC Blocking Voltage
20
50.060
60
100
150
200
o 30
V
DC
E 40 .030
.76
1.5280
VF
.95V
ES2A-L-ES2D-L
IFM = 2.0A;TJ=25 C
F
.065
.091
1.65
2.32
O
G
.189
.220
4.801.0
5.59
Amps
ES2G-LRectified Current 1.25V V R I=O V RRM T J = 25 C
Maximum Average Forward
5.0
H
.157
.181
4.00
I R 4.60
μA Reverse
current
1.70V ES2J-L
J
.090
.115
2.25 2.92
O
100
V = V 2.0A;T
T J J==150
125oCC
Peak Forward SurgeES2J-L
Current 8.3 ms single half sine-wave
.975V(Typ) RIFM = RRM
30 C
IFSM and applied 4V DC reverse SUGGESTED
Amps
SOLDER
pF
Diode junction capacitance1.25V(Max)
f=1MHz
voltage
15
superimposed on rated load (JEDEC method)
0.012(0.3) Typ.
0.196(4.9)
0.180(4.5)
RoHS
product
for packing
code
suffix
"G"
Halogen
product
for packing
code
suffix
"H"
Marking
:free
Cathode
band
and
type
number
(No '-L' Suffix)
Maximum
Ratings
rated flame retardant
• Epoxy : UL94-V0
0.146(3.7)
0.130(3.3)
J
PAD LAYOUT
O
Maximum
DC temperature
Storage
+175
-65
C
0.090”
℃/W
40T STG
TypicalReverse
Thermal Resistance
RTΘJA= 25к
Current At (Note 2) IR
5µA
A
PF
120
TypicalRated
Junction
C
J
DCCapacitance
Blocking (Note 1)
Operating
1mA
T = 100к
*5
*1
*3 A
*4
-55
V RMS*2
V R TJ
VF
t rr to +125temperature
Voltage
-55 to +150
SYMBOLS RangeV RRM
Operating
Temperature
℃
(V)IR=1.0A,
(ns)
(V) Trr (V) 35ns(V)TSTG
T J, ( OC) 0.085”
Maximum
Reverse
IF=0.5A,
- 65 to +175
Storage
Temperature
Range
℃
*1 Repetitive peak reverse voltage
Recovery Time
I =0.25A
35
50
50 rr
FFM101L
Typical Junction
CJ
15pF
Measured at
*2 FM180-MH
RMS voltage
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
FM1100-MH FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL
FFM102L
70
100
100
Capacitance
1.0MHz,
VR=4.0V
150
0.070” 0.85
Volts
0.9
Maximum Forward
Voltage at 1.0A
DC 140
0.92
V
F
0.50
0.70
FFM103L
200
200
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
*3 Continuous reverse voltage
0.5
Maximum Average
Reverse
Current
at
@T
A=25℃
1.30
-55 to +150
400
400 IR
280
FFM104L
mAmps
*4 Maximum forward voltage@I F =1.0A
10
@T A=125℃
Rated DC Blocking Voltage
250
600
600
420
FFM105L
*5 Maximum Reverse recovery time, note 1
560
800
800
FFM106L
NOTES:
500
1- Measured atFFM107L
1 MHZ and applied
reverse voltage
VDC.
1000
700 of 4.01000
www.mccsemi.com
2- Thermal Resistance
From Junction
Ambient
Note 1. Reverse
recoverytotime
test condition, I F =0.5A, I R =1.0A, I RR =0.25A
Reel packing
Revision: D
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
1 of 3
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
2012/05/25
CARTON
SIZE
(m/m)
CARTON
(pcs)
SMA/6
7"
2,000
4.0
20,000
183*170*183
178
382*356*387
SMA/6
2012-06
13"
7,500
4.0
15,000
337*337*37
330
350*330*360
2012-1
160,000
APPROX.
GROSS WEIGHT
(kg)
16.0
14.2
120,000
WILLAS
ELECTRONIC
CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
FFM101L
THRU
1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
THRU
FM1200-M+
FFM107L
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SMA-LS PACKAGE
SOD-123+ PACKAGE
Rating and characteristic Package
curves outline
Features
FIG.1-TYPICAL
design,FORWARD
excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
optimize board space.
INSTANTANEOUS FORWARD CURRENT,(A)
• Low
50power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
for overvoltage protection.
• Guardring
10
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
3.0
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
1.0 product for packing code suffix "G"
• RoHS
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
mounted application in order to
• Low profile surface
1.2
0.146(3.7)
0.130(3.3)
1.0
0.8
0.6
0.4
0.2
0
20
40
TJ=25 C
60
80
100
Method 2026
PEAK FORWAARD SURGE CURRENT,(A)
2.0
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
Ratings at5025℃
ambient temperature unless otherwise specified.
Ω
10Ω
NONINDUCTIVE
NONINDUCTIVE
Single phase
half wave, 60Hz,
resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Peak Reverse Voltage
1Ω
NONINDUCTIVE
Maximum RMS Voltage
OSCILLISCOPE
(NOTE 1)
Maximum DC Blocking Voltage
Maximum
PULSE
GENERATOR
(NOTE 2)
VRRM(+)
12
20
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
40
30
Typical Junction Capacitance
(Note 1)
+0.5A
Operating Temperature Range
Storage Temperature Range
0
JEDEC method
10
0
13
30
1
5
16
60
10
18
80
10
100
50
115
100
150
120
200
Volts
105
140
Volts
VDC
20
30
40
50
150
200
Volts
IO
IFSM
TJ
60
80
100
FIG.5-TYPICAL JUNCTION
CAPACITANCE
1.0
Amps
35
30
Amps
30
40
120
25
-55 to +125
PF
-55 to +150
20
℃/W
℃
- 65 to +175
℃
15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
@T A=125℃
IR
10
1cm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
0.70
0.9
0.85
0.92
0.5
5
.01
.05
.1
.5
1
Volts
mAmps
10
0
-1.0A
SET TIME BASE FOR
15
50
35 NUMBER
42OF CYCLES
56AT 60Hz 70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
28
TSTG
CHARACTERISTICS
-0.25A
NOTES:
Sine Wave
20
21
CJ
|
|
|
|
|
|
|
|
Maximum Forward Voltage at 1.0A DC
8.3ms Single Half
TJ=25 C
14
RΘJA
Typical Thermal Resistance (Note trr
2)
0.040(1.0)
0.024(0.6)
Dimensions in inches and (millimeters)
NOTES: 1. Rise
Time= 7ns
max., Input Current
Impedance= 1 megohm.22pF.
Average
Forward
Rectified
200
VRMS
JUNCTION CAPACITANCE,(pF)
Maximum
180
( ) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL
D.U.T.
( )
Recurrent
160
FIG.4-MAXIMUM
NON-REPETITIVE FORWARD
0.031(0.8) Typ.
0.031(0.8) Typ.
SURGE CURRENT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking
140
50
• Polarity
: Indicated by cathode band
.01
.6
.8 1.0 1.2 1.4 1.6 1.8
: Any
• Mounting Position
FORWARD VOLTAGE,(V)
• Weight : Approximated 0.011 gram
25Vdc
Code
(approx.)
120
LEAD TEMPERATURE (°C)
Pulse Width 300us
(+)
0.071(1.8)
0.056(1.4)
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
1% Duty Cycle
• Epoxy : UL94-V0 rated flame retardant
0.1
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0
Halogen free product for packing code suffix "H"
Mechanical data
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
SOD-123H
5
10
50
100
REVERSE VOLTAGE,(V)
50 / 10ns / cm
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
FFM101L
THRU
1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
THRU
FM1200-M+
FFM107L
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SMA-LS PACKAGE
SOD-123+ PACKAGE
Package outline
Features
Pinning
information
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Pin mounted application in orderSimplified
outline
to
• Low profile surface
optimize board space.
• Low power loss, high efficiency.
Pin1
current cathode
capability, low forward voltage drop.
• High
1
surge capability.
• High
Pin2
anode
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Marking
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Symbol
0.146(3.7)
0.130(3.3)
2
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
Type number
Marking code
Mechanical
data
F11
: UL94-V0 rated flame retardant
• Epoxy FFM101L
FFM102L
F12
• Case : Molded plastic, SOD-123H
,
FFM103L
F13
• Terminals
:Plated terminals, solderable per MIL-STD-750
F14
FFM104L
Method 2026
FFM105L
F15
• Polarity : Indicated by cathode band
FFM106L
F16
Position : Any
• Mounting
FFM107L
F17
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Suggested solder pad layout
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
20
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
A
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
Storage Temperature Range
15
50
16
60
18
80
10
100
115
150
120
200
Volts
21
28
35
42
56
70
105
140
Volts
30
40
50
60
80
100
150
200
Volts
C
B
TJ
Operating Temperature Range
14
40
1.0
30
RΘJA
Typical Thermal Resistance (Note 2)
13
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.50
0.70
Dimensions in inches and (millimeters)
@T A=125℃
0.85
0.5
IR
0.9
0.92
Volts
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
PACKAGE
SMA-LS
2012-06
2012-1
A
B
C
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
FFM101L
THRU
1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
THRU
FM1200-M+
FFM107L
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SMA-LS
PACKAGE
SOD-123+
PACKAGE
Package outline
Packing
information
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
P0
• Low power loss, high efficiency.
P1
• High current capability, low forward voltage drop.
d
• High surge capability.
for overvoltage protection.
• Guardring
E
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
F
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
B
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
W
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0
A rated flame retardant
P
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
D2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
D1
T
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
C
W1
D
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
unit:mm
80
100
150
200
Volts
IO
Item Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Symbol
Tolerance
1.0
SMA
30
Amps
2.80
Carrier width
A 0.1
40
RΘJA
Carrier length
B 0.1
5.00
120
Typical Junction Capacitance (Note 1)
CJ
Carrier depth
C to +125 0.1
1.90
-55
-55 to +150
Operating Temperature Range
TJ
1.50
Sprocket hole
d
0.1
- 65 to +175
Storage Temperature Range
TSTG
330.00
13" Reel outside diameter
D
2.0
50.00
13" Reel inner diameter
D1
min
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
178.00
7" Reel outside diameter
D
2.0
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50 min
0.70
0.85
62.00
7" Reel inner diameter
D1
0.5
Maximum Average Reverse Current atFeed
@T A=25℃
13.00
hole diameterIR
0.5
D2
10
@T A=125℃
Rated DC Blocking Voltage
1.75
Sprocket
hole position
E
0.1
5.50
Punch hole position
F
0.1
NOTES:
4.00
Punch hole pitch
P
0.1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
4.00
P0
0.1
Sprocket hole pitch
2- Thermal Resistance From Junction to Ambient
2.00
0.1
Embossment center
P1
0.23
Overall tape thickness
T
0.1
12.00
W
0.3
Tape width
18.00
Reel width
W1
1.0
Typical Thermal Resistance (Note 2)
Amps
℃/W
PF
℃
℃
UNIT
Volts
mAmps
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.