WILLAS FM120-M+ 2SC1623xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. We declare that the material of product compliance with RoHS requirements. • High current capability, low forward voltage drop. Pb-Free package is available capability. • High surge RoHS product for packing code suffix ”G” protection. • Guardring for overvoltage Ultra high-speed switching. • Halogen free product for packing code suffix “H” epitaxial planar metal silicon junction. • SiliconSensitivity Moisture Levelchip, 1 • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 MAXIMUM RATINGS • RoHS product for packing code suffix "G" HalogenRating free product for packing code suffix "H" Symbol Value Unit VCEO 50 V • Epoxy : UL94-V0 Collector-Base Voltagerated flame retardant VCBO 60 V Mechanical data Collector-Emitter Voltage • Case : Molded plastic, SOD-123H VEBO 7 , • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter-Base Voltage Collector current-continuoun Method 2026 IC 0.012(0.3) Typ. SOT– 23 0.040(1.0) 30.024(0.6) COLLECTOR 0.031(0.8) Typ. V 0.031(0.8) Typ. 1 150 mAdc BASE THERMAL • Polarity : CHARATEERISTICS Indicated by cathode band Dimensions in inches and (millimeters) 2 Characteristic : Any • Mounting Position Total Device Dissipation FR-5 Board, • Weight : Approximated 0.011 gram(1) Symbol Max Unit 225 mW EMITTER PD o TA=25 C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Derate above 25 C 1.8 mW/oC Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Junction to Ambient Single phase Resistance, half wave, 60Hz, resistive of inductive load. ForTotal capacitive load, derate current by 20% Device Dissipation RATINGS Alumina Substrate, (2) TA=25 oC Marking Code o VRRM Maximum RMS Voltage Thermal Resistance, Junction to Ambient VRMS Junction and Storage Maximum DC Blocking VoltageTemperature VDC DEVICE Maximum AverageMARKING Forward Rectified Current IO 2SC1623QLT1=L5 2SC1623RLT1 =L6 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 556 o C/W PD SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Derate above 25 C Maximum Recurrent Peak Reverse Voltage R θJA IFSM 12 20 13 30 R 14θJA Tj 20 ,Tstg 21 300 14 2.4 40 41728 -55 to +150 30 40 mW 15 16 o C 60 mW/ 50 o C/W 42 35 o 50C 60 18 80 10 100 115 150 120 200 Vo 56 70 105 140 Vo 80 100 150 200 Vo 1.0 30 2SC1623SLT1=L7 o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Typical Thermal Resistance (Note 2) Characteristic Typical Junction Capacitance (Note 1) CJ TJ Operating Range OFFTemperature CHARACTERISTICS RΘJA Storage Temperature Collector CutoffRange Current (VCB=60V) TSTG Emitter Cutoff Current (VBE=5V) CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 I I CBO 40 Typ 120 Min Max ℃ Unit P -55 to +150 - Am - 65 to +175 - EBO 0.1 0.1 ℃ µA µA ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Symbol Am @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1623xLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. ON CHARACTERISTICS • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) DC Current current capability, low forward voltage drop. • HighGain CE=6V)capability. (IC=1.0mA, • HighVsurge Collector-Emitter Voltage for overvoltage protection. • GuardringSaturation high-speed switching. • UltraB=10mA) (IC=100mA,I epitaxial planar chip, metal silicon junction. • SiliconSaturation Base-Emitter Voltage Lead-free parts meet environmental standards of • B=10mA) (IC=100mA,I MIL-STD-19500 /228 120 hFE for packing code suffix "G" Base -Emitter On Voltage • RoHS product CE=6.0V) IC=1mA,V Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 560 V CE(sat) - 0.15 0.3 0.071(1.8) 0.056(1.4) VBE(sat) - 0.86 1.0 V 0.55 0.62 0.65 V V BE Mechanical data - V 0.040(1.0) 0.024(0.6) rated flame retardant • Epoxy : UL94-V0CHARACTERISTICS SMALL-SIGNAL SOD-123H • Case : Molded plastic, Current-Gain-Bandwidth Product , • Terminals :Plated terminals, solderable per MIL-STD-750 E =1.0MHz) (VCE=6.0V,I Method 2026 CE = 6V, Output Capacitance(V IE=0, f=1.0MHz) Ft - 0.031(0.8) Typ. Cob - 3 - - • Polarity : Indicated by cathode band hFE• Values classified Mountingare Position : Any as followes • Weight : Approximated 0.011 gram NOTE: 250 MHz 0.031(0.8) Typ. Pf Dimensions in inches and (millimeters) * Q R S 120~270 180~390 CHARACTERISTICS 270~560 hFE RATINGS MAXIMUM AND ELECTRICAL Ratings at 25℃ ambient temperature unless otherwise specified. Single phaseMARKING half wave, 60Hz, resistive of inductive INFORMATION load. DEVICE AND ORDERING For capacitive load, derate current by 20% Shipping Device Marking RATINGS 2SC1623QLT1 Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 3000/Tape&Reel L5 L6 2SC1623RLT1 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 2SC1623SLT1 Maximum DC Blocking Voltage 12 13 20 30 VRRM 3000/Tape&Reel 14 40 14 21 VRMS 3000/Tape&Reel 20 30 VDC L7 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V IO IFSM RΘJA Typical Thermal Resistance (Note 2) 15 50 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1623xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Fig.1 Grounded emitterexcellent propagation process design, powercharacteristics dissipation offers • Batch SOD-123H I C, COLLECTOR CURRENT (mA) 25°C Fig.2 Grounded emitter output characteristics( ) 100 – 55°C T A = 100° C I C, COLLECTOR CURRENT (mA) better reverse leakage current and thermal resistance. 50 profile surface mounted application in order to • Low VCE= 6 V optimize board space. 20 power loss, high efficiency. • Low current capability, low forward voltage drop. • High 10 • High surge capability. 50 for overvoltage protection. • Guardring • Ultra high-speed switching. 2 • Silicon epitaxial planar chip, metal silicon junction. 1 parts meet environmental standards of • Lead-free MIL-STD-19500 /228 0.5 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" 0.50mA T A = 25°C 0.146(3.7) 0.130(3.3) 80 0.012(0.3) Typ. 60 0.071(1.8) 0.056(1.4) 40 20 0.2 Mechanical data 0.1 0 : UL94-V0 rated flame retardant • Epoxy 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 plastic, SOD-123H • Case : Molded V BE , BASE TO EMITTER VOLTAGE(V) , • Terminals :Plated terminals, solderable per MIL-STD-750 0 V Method 2026 Fig.3 Grounded emitter output characteristics( ) h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) , COLLECTOR TO EMITTER VOLTAGE (V) RATINGS 0 4 Maximum DC Blocking Voltage 200 100 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 12 20 VRRM 8 13 30 VRMS 14 21 VDC16 2020 30 12 14 40 20 15 50 28 10 0.240 superimposed on rated load (JEDEC method) Operating 500 Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS VF 100 Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 20 2- Thermal Resistance From Junction to Ambient 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 2012-06 70 8020 50100100 Vo 105 140 Vo 200150 200 Vo Am Am ℃/ 120 P -55 to +150 ℃ - 65 to +175 ℃ 0.2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 56 120 200 Fig.6 Collector-emitter saturation voltage vs. 40current collector 0.5 -55 to +125 200 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) CJ 10 115 150 30 RΘJA Typical Junction Capacitance (Note 1) 42 60 5 2 10 100 Fig.5 DC current gain vs. collector current ( ) Typical Thermal Resistance (Note 2) 1 50 18 80 I C, COLLECTOR CURRENT (mA) 1.0 IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 16 60 35 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE Maximum Average Forward Rectified Current IO (V) h FE, DC CURRENT GAIN 0.031(0.8) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum RMS Voltage 0 2012- 0.040(1.0) 0.024(0.6)2.0 Dimensions in inches and (millimeters) Maximum Recurrent Peak Reverse Voltage 1.6 500 Marking Code2 NOTES: 1.2 Fig.4 DC current gain vs. collector current ( ) 6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive 4 load, derate current by 20% 0.8 CE 0.031(0.8) Typ. • Polarity : Indicated by cathode band 10 • Mounting Position : Any • Weight : Approximated 0.011 gram 8 0.4 100 200 0.50 0.1 0.70 0.9 0.85 0.5 0.92 mA 10 0.05 Vo 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1623xLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H optimize boardcollector space. current ( ) power loss, high efficiency. • Low 0.5 • High current capability, low forward voltage drop. • High surge capability. 0.2 for overvoltage protection. • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 0.1 • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 0.05 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.02 • Epoxy : UL94-V0 rated flame retardant 0.01 : Molded plastic, SOD-123H • Case , 0.2 0.5:Plated 1 2 5 10 20 50 MIL-STD-750 100 200 • Terminals terminals, solderable per V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. profile surface mounted application in order to • Low Fig.8 Collector-emitter saturation voltage vs. collector current ( ) 0.146(3.7) 0.130(3.3) 0.5 0.2 0.071(1.8) 0.056(1.4) 0.1 0.05 0.02 0.040(1.0) 0.024(0.6) 0.01 0.031(0.8) Typ. 0.2 0.5 I C, COLLECTOR Method 2026 CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) RATINGS 200 12 20 13 30 100 Voltage Maximum RMS VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 50 –0.5 Current –1 –10 –20 Peak Forward Surge 8.3–2ms single–5half sine-wave superimposed on rated load I(JEDEC method) , EMITTER CURRENT (mA) E –50 –100 50 100 10 15 50 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 50 60 80 100 150 200 V 2 1.0 1 30 1 0.2 0.5 A 2 5 10 20 A 50 V CB, COLLECTOR TO BASE VOLTAGE (V) Typical Junction (Note 1)time constant vs.emitter CJ Fig.11 Capacitance Base-collector current -55 to +125 Operating Temperature Range TJ Storage Temperature Range 14 40 40 RΘJA Typical Thermal Resistance (Note 2) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) 20 SYMBOL FM120-MH FM130-MH FM140-MH 5FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VRRM ℃ 40 TO BASE VOLTAGE (V) V EB, EMITTER 120 P -55 to +150 - 65 to +175 TSTG 200 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF 100 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage NOTES: 10 20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage 5 Dimensions in inches and (millimeters) 500 Marking Code 2 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.031(0.8) Typ. 1 I C, COLLECTOR CURRENT (mA) • Polarity : Indicated by cathode band GainPosition bandwidth Mounting : Any product vs. emitter current •Fig.9 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 50 0.50 0.70 0.85 0.5 IR 0.9 0.92 V 10 m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 20 2- Thermal Resistance From Junction to Ambient 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC1623xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features SOT-23 offers • Batch process design, excellent power dissipation Pb Free Product Package outline better reverse leakage current and thermal resistance. SOD-123H .006(0.15)MIN. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .122(3.10) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon.106(2.70) • Lead-free parts meet environmental standards of .063(1.60) .047(1.20) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .080(2.04) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .070(1.78) Ratings at 25℃ ambient temperature unless otherwise specified. .003(0.08) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .020(0.50) TJ TSTG .012(0.30) Operating Temperature Range Storage Temperature Range CHARACTERISTICS -55 to +125 40 120 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .083(2.10) Halogen free product for packing code suffix "H" Mechanical data 0.50 0.70 Dimensions in inches and (millimeters) IR @T A=125℃ 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012- Volts WILLAS ELECTRONIC CORP. mAmp WILLAS FM120-M+ 2SC1623xLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) forward voltage drop. • High current capability, (2) low (1) 2SC1623 x Tape&Reel: 3 Kpcs/Reel capability.LT1 G ‐WS • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) CLASSIFICATION OF h RANK epitaxial planar chip, FE metal silicon junction. Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.