MMBT4403LT1(SOT 23)

WILLAS
FM120-M+
MMBT4403LT1
THRU
General Purpose Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
design, excellent power dissipation offers
• Batch
PNPprocess
Silicon
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
• RoHS board
productspace.
for packing code suffix "G"
power loss,
high efficiency.
• Low
Halogen
free product
for packing code suffix "H"
current capability, low forward voltage drop.
• High
● Moisture Sensitivity Level 1
• High surge capability.
for overvoltage protection.
• Guardring INFORMATION
ORDERING
• Ultra high-speed switching.
epitaxial planar
chip, metal silicon
junction.
• Silicon
Device
Marking
Shipping
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MMBT4403LT1
3000/Tape & Reel
MIL-STD-19500 /228 2T
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT– 23
Mechanical
data
MAXIMUM
RATINGS
• Epoxy : UL94-V0
Rating rated flame retardant
Symbol
Collector–Emitter
Voltage
V CEO
• Case : Molded plastic, SOD-123H
,
Collector–Base Voltage
V CBO
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter–Base Voltage
Method 2026
Collector Current — Continuous
Polarity : Indicated by cathode band
V
EBO
IC
•
• Mounting Position : Any
THERMAL CHARACTERISTICS
• Weight : Approximated
0.011 gram
Characteristic
Value
0.040(1.0)
0.024(0.6)
Unit
– 40
Vdc
0.031(0.8) Typ.
– 40
– 5.0
Vdc
Vdc
– 600
mAdc
0.031(0.8) Typ.
3
COLLECTOR
Dimensions in inches and (millimeters)
1
BASE
Total Device Dissipation FR –5 Board (1)
Symbol
Max
Unit
PD
225
mW
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T A =25 °C
Ratings at 25℃ ambient temperature unless otherwise specified.
Derate above 25°C
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
556
°C/W
Thermal Resistance Junction to Ambient
R θJA
For capacitive load, derate current by 20%
Total Device Dissipation
PD
300
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Alumina Substrate (2) T A = 25°C
Marking Code
12
13 2.4 14 mW/°C
15
16
18
10
115
120
Derate above 25°C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Thermal Resistance, Junction to Ambient
R θJA
417
°C/W
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
Junction and Storage Temperature
T J , T stg
–55 to +150
°C
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
AverageMARKING
Forward Rectified Current
DEVICE
MMBT4403LT1 = 2T
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
IFSM
1.0
30
CHARACTERISTICS
(T A =R25°C
unless otherwise noted)
Typical ELECTRICAL
Thermal Resistance
(Note 2)
ΘJA
Typical Junction Capacitance (NoteCharacteristic
1)
OFF
CHARACTERISTICS
Operating
Temperature
Range
CJ
TJ
Collector–Emitter
Breakdown Voltage (3) TSTG
Storage Temperature
Range
CHARACTERISTICS
Collector–Base
Breakdown Voltage
Amps
40
120Max
Min
- 65 to +175
V (BR)CEO
℃/W
Unit
PF
-55 to +150
– 40
℃
℃
Vdc
—
FM150-MH FM160-MH FM180-MHVdc
FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH
V FM140-MH
(BR)CBO
VF
0.50
IR
V (BR)EBO
Maximum Average
Reverse Current
at @T
A=25℃
Emitter–Base
Breakdown
Voltage
Rated DC Blocking
Voltage
(I E = –0.1mAdc,
I C = 0) @T A=125℃
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
2- Thermal Resistance From Junction to Ambient
(V CE = –35 Vdc, V EB = –0.4 Vdc)
NOTES:
Symbol
-55 to +125
(I C = –1.0 mAdc, I B = 0)
Maximum Forward
at 1.0A
(I C = Voltage
–0.1mAdc,
I E =DC
0)
Amps
–0.70
40
—
0.5
– 5.0
0.85
Vdc
10 —
0.9
0.92
Volts
mAmp
µAdc
I BEV
—
– 0.1
—
– 0.1
µAdc
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
MMBT4403LT1
THRU
General Purpose Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
process design, excellent power dissipation offers
• Batch
ON CHARACTERISTICS
better reverse leakage current and thermal resistance.
DC Current Gain
• Low profile surface mounted application in order to
(I
= –0.1space.
mAdc, V CE = –1.0 Vdc)
optimize Cboard
(I
=
–1.0
mAdc,
V CE = –1.0 Vdc)
C loss, high
efficiency.
• Low power
(I C = –10
mAdc, Vlow
–1.0 Vdc)
capability,
voltage drop.
• High current
CE =forward
• High surge
(I C =capability.
–150 mAdc, V CE = –2.0 Vdc)(3)
overvoltage
• Guardring
(I C =for
–500
mAdc, V CEprotection.
= –2.0 Vdc)(3)
switching.
• Ultra high-speed
Collector–Emitter
Saturation Voltage(3)
planar chip, metal silicon junction.
• Silicon (Iepitaxial
C = –150mAdc, I B = –15 mAdc)
parts
environmental
standards of
• Lead-free
(I C =
–500meet
mAdc,
I B = –50 mAdc)
MIL-STD-19500 /228
Base–Emitter
Saturation
Voltage
for packing
code suffix
"G"(3)
• RoHS product
(I
=
–150
mAdc,
I
=
–15
mAdc)
C
B
Halogen free
product for packing
code suffix "H"
(I C = –500 mAdc,
Mechanical
dataI B = –50 mAdc)
Features
PackageMin
outline
Symbol
30
60
100
100
20
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
VCE(sat)
V
Vdc
––
––
– 0.4
– 0.75
– 0.75
––
– 0.95
– 1.3
Vdc
BE(sat)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
fT
0.031(0.8) Typ.
MHz
200
––
21
28
35
42
56
70
105
140
Volts
20
DC= –2.0 Vdc,
(V CC = – 30 Vdc, VVEB
30 t d
40
50 —
60
80
15
100
150
200
Volts
Maximum Average
RiseForward
Time Rectified Current
I C = –150mAdc, I B1IO= –15 mAdc)
td
CHARACTERISTICS
Maximum DC Blocking
Voltage
Delay Time
VRMS
14
Storage
Time
(Vhalf
–30 Vdc, I C = –150 mAdc,
CC =
Peak Forward Surge
Current
8.3 ms single
sine-wave
IFSM
superimposed on
rated
load (JEDEC method)
Fall
Time
I B1 = I B2 = –15 mAdc)
Typical Thermal Resistance (Note 2)
RΘJA
3. PulseCapacitance
Test: Pulse(Note
Width1)<300 µs; Duty Cycle
Typical Junction
CJ<2.0%.
TJ
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
+2.0V
NOTES:
<2.0 ns
– 30 V
tf
—
225
30
40
120
-55 to +125
ns
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
@T A=125℃
VF
0.50
+ 14V
1.0 k
2- Thermal Resistance From Junction to Ambient
–16 V
1.0 to 100µs,
DUTY CYCLE = 2%
Figure 1. Turn–On Time
0.70
0.5
IR
200
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-06
2012-11
—
Amps
ns
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
ts
20
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
1.0
30
—
TSTG
––
––
0.146(3.7)
––
0.130(3.3)
––
300
––
Method 2026
Collector–Base
Capacitance
C cb
pF
Dimensions
in inches 8.5
and (millimeters)
• Polarity(V: Indicated
by cathode band
––
CB= –10 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base
Capacitance
C eb
pF
Position : Any
• Mounting
(V
––
30
BE = –0.5 Vdc, I C = 0, f = 1.0 MHz)
• Weight : Approximated 0.011 gram
Input Impedance
h ie
kΩ
(V CE= –10 Vdc,
I C = –1.0 mAdc,
= 1.0 kHz)
15
MAXIMUM
RATINGS
ANDf ELECTRICAL
CHARACTERISTICS 1.5
–4
Ratio
h re
X 10
Ratings at 25℃ Voltage
ambientFeedback
temperature
unless otherwise specified.
0.1
8.0
CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Single phase half(Vwave,
60Hz, resistive of inductive load.
Small–Signal
Current
Gain
h
—
fe
For capacitive load, derate current by 20%
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
60
500
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Output Admittance
h oe
µmhos
Marking Code
12
13
14
15
16
18
10
115
120
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
1.0
100
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
MaximumSWITCHING
RMS Voltage
Unit
SOD-123H
hFE
• Epoxy : UL94-V0 rated flame retardant
SMALL–SIGNAL CHARACTERISTICS
• Case : Molded plastic, SOD-123H
Current–Gain — Bandwidth Product
,
• Terminals
:Plated
terminals,
solderable
perMHz)
MIL-STD-750
(I C =
–20mAdc,
V CE= –10
Vdc, f = 100
Max
0.9
0.85
– 30 V
< 20 ns 10
0.92
Volts
mAmp
200
1.0 k
0
C S* < 10 pF
1N916
–16 V
C S*< 10 pF
1.0 to 100µs,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT4403LT1
General
Purpose
Transistor
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
TYPICAL TRANSIENT CHARACTERISTICS
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
T J = 25°C
T J = 100°C
optimize board space.
MIL-STD-19500 /228
5.0 product for packing code suffix "G"
RoHS
Halogen free product for packing code suffix "H"
•
0.146(3.7)
0.130(3.3)
10
7.0
C cb
3.0
0.071(1.8)
0.056(1.4)
2.0
1.0
0.7
0.5
QT
0.3
Mechanical
data
3.0
QA
0.2
• Epoxy : UL94-V0 rated flame retardant
2.0
: Molded plastic, SOD-123H
• Case
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.1
100.031(0.8) Typ.
20
VRRM
12
20
13
30
7.0
Maximum RMS
Voltage
VRMS
14
Maximum DC5.0
Blocking Voltage
20
Forward
30
t d@VBE(off) = 0V
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
10
Maximum Recurrent
Peak Reverse Voltage
10
Average
t r, RISE TIME (ns)
t , TIME (ns)
t r @V
=30V
Ratings at 25℃ ambient temperature unless otherwise
specified.
CC
@V CC=10V
30half wave, 60Hz, resistive of inductive tload.
Single phase
r
t d@VBE(off) = 2.0V
For capacitive load, derate current by 20%
Maximum
V CC= 30V
I C / I B =10
70
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
50
20
0.031(0.8)
200
300 Typ. 500
100
100
Marking Code
70
Dimensions in inches and (millimeters)
I C /I B = 10
70
50
Figure 4. Charge Data
Figure
3. Capacitance
• Polarity : Indicated by
cathode band
• Mounting Position : Any
100
• Weight : Approximated 0.011 gram
30
I C , COLLECTOR CURRENT (mA)
VOLTAGE (VOLTS)
MethodREVERSE
2026
50
0.012(0.3) Typ.
V CC = 30 V
I C / I B = 10
5.0
Q, CHARGE (nC)
CAPACITANCE (pF)
• Low30power loss, high efficiency.
• High current capability, low forward voltage drop.
20
surge capability.
• High
C eb
• Guardring for overvoltage protection.
• Ultra high-speed switching.
10
epitaxial planar chip, metal silicon junction.
• Silicon
7.0
parts meet environmental standards of
• Lead-free
20
VDC
30
50
70
Rectified
Current
200
IO
100
300
40
10
14
15
50
16
60
18
80
10
100
115
150
120
200
Volts
21
7.0
28
35
42
56
70
105
140
Volts
30
5.0
40
50
200
Volts
500
10
20
Turn–On Time
Typical Junction Capacitance (Note 1)
-55 to +125
TJ
Operating Temperature Range
Storage Temperature Range
40
120
CJ
200
70
100
100
200
150
300
Amp
500
Amp
Figure 6. Rise Time
RΘJA
Typical Thermal Resistance (Note 2)
80
50
1.0
I C , COLLECTOR
CURRENT (mA)
30
I Cms
, COLLECTOR
CURRENT (mA)
Peak Forward Surge Current 8.3
single half sine-wave
IFSM
superimposed on rated load (JEDEC
method)
Figure
5.
60
30
℃/W
PF
-55 to +150
I C/I B = 20
TSTG
℃
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
t s , RISE TIME (ns)
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
50
@T A=125℃
I C/I B = 10
0.50
0.70
0.85
0.5
IR
10
t s’ = t s – 1/8 t f
I B1 = I B2
0.9
0.92
Volts
mAmp
1- Measured at 1 MHZ and applied reverse voltage30
of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
20
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT4403LT1
Purpose
Transistor
FM1200-M+
1.0AGeneral
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
SMALL–SIGNAL CHARACTERISTICS
Package outline
NOISE FIGURE
Features
V CE = –10 Vdc, T A = 25°C
• Batch process design, excellent power dissipation offers
Bandwidth = 1.0 Hz
better reverse leakage current and thermal resistance.
SOD-123H
• Low
10 profile surface mounted application in order to
10
optimize board space.
• Low power loss, high efficiency.
• High8 current capability, low forward voltage drop.
• High surge capability.
I C = 1.0 mA, R S = 430Ω
for overvoltage
protection.
• Guardring
6
I C = 500 µA, R S = 560Ω
• Ultra high-speed switching.
I C = 50 µA, R S = 2.7kΩ
epitaxial planar
chip, metal silicon junction.
• Silicon
4
I = 100 µA, R S = 1.6 kΩ
standards of
• Lead-free parts meet Cenvironmental
MIL-STD-19500 /228
suffix SOURCE
"G"
• RoHS
2 product for packing
RScode
= OPTIMUM
RESISTANCE
Halogen free product for packing code suffix "H"
f = 1.0 kHz
0.146(3.7)
0.130(3.3)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
Mechanical
data
0
0.012(0.3) Typ.
I C = 50 µA
100 µA
500 µA
1.0 mA
6
4
0.071(1.8)
0.056(1.4)
2
0
0.010.02
0.05 0.1
0.2 flame
0.5 1.0
2.0
5.0 10 20
50 100
: UL94-V0
rated
retardant
• Epoxy
f , FREQUENCY (kHz)
• Case : Molded plastic, SOD-123H
,
Figure 8. Frequency Effects
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
50 100
200
500
1k
2k
5k
10k0.024(0.6)
20k
50k
R S, SOURCE RESISTANCE (Ω)
0.031(0.8) Typ.
0.031(0.8) Typ.
Figure 9. Source Resistance Effects
h PARAMETERS
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
• Mounting Position : Any
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
• Weight : Approximated
0.011 gram
a high–gain and a low–gain
unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
h fe, CURRENT GAIN
Marking Code
300
12
20
200
VRRM
13
30
MMBT4403LT1 UNIT 1
14
VRMS
MMBT4403LT1 UNIT 2
Maximum RMS100
Voltage
Maximum DC Blocking
Voltage
70
Maximum Average
50 Forward Rectified Current
Peak Forward Surge
Current 8.3 ms single half sine-wave
30
0.1 load (JEDEC
0.2 0.3method)
0.5 0.7
superimposed on rated
1.0
IO
IFSM
2.0
21
20
VDC
30
7.0 5.0
CHARACTERISTICS
VF
Maximum Average
2.0 Reverse Current at @T A=25℃
IR
@T A=125℃
1.0
0.5
2- Thermal Resistance From Junction to Ambient
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
2012-06
2012-11
10
100
115
150
120
200
Volts
28
1
35
42
56
70
105
140
Volts
40
0.5
50
60
80
100
150
200
Volts
1.0
30
0.2
0.1
0.2
0.3
0.5 0.7
Amps
1.0
2.0
3.0
7.0 5.0
Amps
10
I C , COLLECTOR
(mAdc)
40 CURRENT
℃/W
Figure 11.120
Input Impedance
500
PF
-55 to +150
℃
- 65 to +175
100
0.50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
18
80
℃
MMBT4403LT1 UNIT 1
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL UNIT
MMBT4403LT1
2
5.0 Voltage at 1.0A DC
Maximum Forward
NOTES:
16
60
-55 to +125
TSTG
10
15
50
TJ
20
Storage Temperature Range
5
CJ
10. Current Gain
Operating Temperature Range
14
40
2
10
h oe , OUTPUT ADMITTANCE ( µmhos)
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
Typical Junction Capacitance (Note
1)
Figure
MMBT4403LT1 UNIT 2
20
0.1
3.0
I C (Note
, COLLECTOR
CURRENTR(mAdc)
Typical Thermal Resistance
2)
ΘJA
Rated DC Blocking Voltage
MMBT4403LT1 UNIT 1
50
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Maximum Recurrent Peak Reverse Voltage
h ie, INPUT IMPEDANCE (kΩ)
1000
Ratings at 25℃ ambient temperature unless otherwise specified.
700
Single phase half wave, 60Hz, resistive of inductive load.
500
For capacitive load, derate current by 20%
10
0.70
50
0.9
0.85
0.92
0.5
mAmp
10
20
Volts
MMBT4403LT1 UNIT 1
10
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
I C , COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT4403LT1
General
Purpose
Transistor
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
STATIC CHARACTERISTICS
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
h FE , NORMALIZED CURRENT GAIN
• Low3.0power loss, high efficiency.
V CE= 1.0 V
low forward voltage drop.
• High2.0current capability,
V CE= 10 V
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1.0 epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
T J = 125°C
25°C
0.071(1.8)
0.056(1.4)
–55°C
0.7
MIL-STD-19500 /228
RoHS
0.5 product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
0.3
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
0.2
Molded0.2
plastic,
SOD-123H
• Case :0.1
0.031(0.8)
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20 Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
I , COLLECTOR CURRENT (mA)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
0.031(0.8)
300 Typ.
500
20
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase0.6
half wave, 60Hz, resistive of inductive load.
I C=1.0 mA
10 mA
For capacitive load, derate current by 20%
RATINGS
0.4
100mA
500mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
Maximum Recurrent
Peak Reverse Voltage
0.2
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
0
0.005
0.01
Average
Forward
0.02
Rectified
0.07 0.1
IO
0.03
0.05
Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
CJ
Operating Temperature Range
TJ
T J = 25°C
V, VOLTAGE ( VOLTS )
V BE(sat) @ I C /I B =10
V BE @ V CE =1.0 V
Maximum Forward Voltage at 1.0A DC
0.4
NOTES:
0.1
0.2
0.5
1.0 2.0
5.0
20
30
200
Volts
Amp
50
Amp
40
120
℃/W
PF
-55 to +150
℃
- 65 θto +175
for VCE(sat)
VC
0
IR
℃
– 0.5
0.70
–1.0
0.9
0.85
0.92
0.5
mAmp
10
–1.5
Volts
θ VS for V BE
–2.0
B
– 2.5
10
20
50
100 200
Figure 16. “On” Voltages
2012-06
10
140
30
+ 0.5
0.50
I C , COLLECTOR CURRENT (mA)
2012-11
7.0
Volts
Volts
-55 to +125
0.2
2- Thermal Resistance
From Junction to Ambient
0
5.0
1.0
3.0
1- Measured at 1 MHZ and applied reverse
voltage
4.0 VDC.
V
@ I /I of
=10
C
2.0
I B , BASE CURRENT (mA)
VF
@T A=125℃
CE(sat)
1.0
120
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.7
TSTG
CHARACTERISTICS
0.6
0.5
Figure 15. Collector Saturation Region
10 Capacitance (Note 1)
Typical Junction
0.3
RΘJA
Typical Thermal Resistance (Note 2)
Storage Temperature
Range
0.8
0.2
COEFFICIENT (mV/ °C)
Maximum
70
Figure 14. DC Current Gain
• Polarity : Indicated by cathode band
• Mounting Position : Any
1.0
• Weight : Approximated 0.011 gram
50
C
Method 2026
0.8
30
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I C , COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT4403LT1
THRU
General Purpose Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOD-123H
SOT-23
• RoHS product for packing code suffix "G"
.006(0.15)MIN.
MIL-STD-19500 /228
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
junction.
• Silicon epitaxial planar chip, metal silicon.122(3.10)
• Lead-free parts meet environmental standards of
.106(2.70)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.008(0.20)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.070(1.78)
RATINGS
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM .080(2.04)
RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
.004(0.10)MAX.
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.020(0.50)
TJ
TSTG
.012(0.30)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
-55 to +125
40
120
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
.055(1.40)
.035(0.89)
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.50
0.70
Dimensions
in inches and (millimeters)
IR
@T A=125℃
0.85
0.5
10
0.9
0.92
Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT4403LT1
General
Purpose
Transistor
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Features
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
high efficiency.
• Low power loss, Device PN Packing 0.146(3.7)
0.130(3.3)
voltage drop.
• High current capability, low forward
(1)
MMBT4403LT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring for overvoltage protection.
•Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating Temperature
Range
TJ
℃
65
to
+175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking
Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.