WILLAS FM120-M+ MMBT4403LT1 THRU General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features design, excellent power dissipation offers • Batch PNPprocess Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize • RoHS board productspace. for packing code suffix "G" power loss, high efficiency. • Low Halogen free product for packing code suffix "H" current capability, low forward voltage drop. • High ● Moisture Sensitivity Level 1 • High surge capability. for overvoltage protection. • Guardring INFORMATION ORDERING • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon Device Marking Shipping • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MMBT4403LT1 3000/Tape & Reel MIL-STD-19500 /228 2T RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOT– 23 Mechanical data MAXIMUM RATINGS • Epoxy : UL94-V0 Rating rated flame retardant Symbol Collector–Emitter Voltage V CEO • Case : Molded plastic, SOD-123H , Collector–Base Voltage V CBO • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter–Base Voltage Method 2026 Collector Current — Continuous Polarity : Indicated by cathode band V EBO IC • • Mounting Position : Any THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram Characteristic Value 0.040(1.0) 0.024(0.6) Unit – 40 Vdc 0.031(0.8) Typ. – 40 – 5.0 Vdc Vdc – 600 mAdc 0.031(0.8) Typ. 3 COLLECTOR Dimensions in inches and (millimeters) 1 BASE Total Device Dissipation FR –5 Board (1) Symbol Max Unit PD 225 mW 2 EMITTER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS T A =25 °C Ratings at 25℃ ambient temperature unless otherwise specified. Derate above 25°C 1.8 mW/°C Single phase half wave, 60Hz, resistive of inductive load. 556 °C/W Thermal Resistance Junction to Ambient R θJA For capacitive load, derate current by 20% Total Device Dissipation PD 300 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Alumina Substrate (2) T A = 25°C Marking Code 12 13 2.4 14 mW/°C 15 16 18 10 115 120 Derate above 25°C 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Thermal Resistance, Junction to Ambient R θJA 417 °C/W Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS Junction and Storage Temperature T J , T stg –55 to +150 °C Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum AverageMARKING Forward Rectified Current DEVICE MMBT4403LT1 = 2T Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 CHARACTERISTICS (T A =R25°C unless otherwise noted) Typical ELECTRICAL Thermal Resistance (Note 2) ΘJA Typical Junction Capacitance (NoteCharacteristic 1) OFF CHARACTERISTICS Operating Temperature Range CJ TJ Collector–Emitter Breakdown Voltage (3) TSTG Storage Temperature Range CHARACTERISTICS Collector–Base Breakdown Voltage Amps 40 120Max Min - 65 to +175 V (BR)CEO ℃/W Unit PF -55 to +150 – 40 ℃ ℃ Vdc — FM150-MH FM160-MH FM180-MHVdc FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH V FM140-MH (BR)CBO VF 0.50 IR V (BR)EBO Maximum Average Reverse Current at @T A=25℃ Emitter–Base Breakdown Voltage Rated DC Blocking Voltage (I E = –0.1mAdc, I C = 0) @T A=125℃ Base Cutoff Current (V CE = –35 Vdc, V EB = –0.4 Vdc) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Collector Cutoff Current 2- Thermal Resistance From Junction to Ambient (V CE = –35 Vdc, V EB = –0.4 Vdc) NOTES: Symbol -55 to +125 (I C = –1.0 mAdc, I B = 0) Maximum Forward at 1.0A (I C = Voltage –0.1mAdc, I E =DC 0) Amps –0.70 40 — 0.5 – 5.0 0.85 Vdc 10 — 0.9 0.92 Volts mAmp µAdc I BEV — – 0.1 — – 0.1 µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT4403LT1 THRU General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic process design, excellent power dissipation offers • Batch ON CHARACTERISTICS better reverse leakage current and thermal resistance. DC Current Gain • Low profile surface mounted application in order to (I = –0.1space. mAdc, V CE = –1.0 Vdc) optimize Cboard (I = –1.0 mAdc, V CE = –1.0 Vdc) C loss, high efficiency. • Low power (I C = –10 mAdc, Vlow –1.0 Vdc) capability, voltage drop. • High current CE =forward • High surge (I C =capability. –150 mAdc, V CE = –2.0 Vdc)(3) overvoltage • Guardring (I C =for –500 mAdc, V CEprotection. = –2.0 Vdc)(3) switching. • Ultra high-speed Collector–Emitter Saturation Voltage(3) planar chip, metal silicon junction. • Silicon (Iepitaxial C = –150mAdc, I B = –15 mAdc) parts environmental standards of • Lead-free (I C = –500meet mAdc, I B = –50 mAdc) MIL-STD-19500 /228 Base–Emitter Saturation Voltage for packing code suffix "G"(3) • RoHS product (I = –150 mAdc, I = –15 mAdc) C B Halogen free product for packing code suffix "H" (I C = –500 mAdc, Mechanical dataI B = –50 mAdc) Features PackageMin outline Symbol 30 60 100 100 20 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) VCE(sat) V Vdc –– –– – 0.4 – 0.75 – 0.75 –– – 0.95 – 1.3 Vdc BE(sat) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. fT 0.031(0.8) Typ. MHz 200 –– 21 28 35 42 56 70 105 140 Volts 20 DC= –2.0 Vdc, (V CC = – 30 Vdc, VVEB 30 t d 40 50 — 60 80 15 100 150 200 Volts Maximum Average RiseForward Time Rectified Current I C = –150mAdc, I B1IO= –15 mAdc) td CHARACTERISTICS Maximum DC Blocking Voltage Delay Time VRMS 14 Storage Time (Vhalf –30 Vdc, I C = –150 mAdc, CC = Peak Forward Surge Current 8.3 ms single sine-wave IFSM superimposed on rated load (JEDEC method) Fall Time I B1 = I B2 = –15 mAdc) Typical Thermal Resistance (Note 2) RΘJA 3. PulseCapacitance Test: Pulse(Note Width1)<300 µs; Duty Cycle Typical Junction CJ<2.0%. TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS +2.0V NOTES: <2.0 ns – 30 V tf — 225 30 40 120 -55 to +125 ns Amps ℃/W PF -55 to +150 ℃ - 65 to +175 @T A=125℃ VF 0.50 + 14V 1.0 k 2- Thermal Resistance From Junction to Ambient –16 V 1.0 to 100µs, DUTY CYCLE = 2% Figure 1. Turn–On Time 0.70 0.5 IR 200 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-06 2012-11 — Amps ns ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ ts 20 SWITCHING TIME EQUIVALENT TEST CIRCUITS Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 1.0 30 — TSTG –– –– 0.146(3.7) –– 0.130(3.3) –– 300 –– Method 2026 Collector–Base Capacitance C cb pF Dimensions in inches 8.5 and (millimeters) • Polarity(V: Indicated by cathode band –– CB= –10 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance C eb pF Position : Any • Mounting (V –– 30 BE = –0.5 Vdc, I C = 0, f = 1.0 MHz) • Weight : Approximated 0.011 gram Input Impedance h ie kΩ (V CE= –10 Vdc, I C = –1.0 mAdc, = 1.0 kHz) 15 MAXIMUM RATINGS ANDf ELECTRICAL CHARACTERISTICS 1.5 –4 Ratio h re X 10 Ratings at 25℃ Voltage ambientFeedback temperature unless otherwise specified. 0.1 8.0 CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Single phase half(Vwave, 60Hz, resistive of inductive load. Small–Signal Current Gain h — fe For capacitive load, derate current by 20% (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 60 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Output Admittance h oe µmhos Marking Code 12 13 14 15 16 18 10 115 120 (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 1.0 100 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM MaximumSWITCHING RMS Voltage Unit SOD-123H hFE • Epoxy : UL94-V0 rated flame retardant SMALL–SIGNAL CHARACTERISTICS • Case : Molded plastic, SOD-123H Current–Gain — Bandwidth Product , • Terminals :Plated terminals, solderable perMHz) MIL-STD-750 (I C = –20mAdc, V CE= –10 Vdc, f = 100 Max 0.9 0.85 – 30 V < 20 ns 10 0.92 Volts mAmp 200 1.0 k 0 C S* < 10 pF 1N916 –16 V C S*< 10 pF 1.0 to 100µs, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4403LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TYPICAL TRANSIENT CHARACTERISTICS • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to T J = 25°C T J = 100°C optimize board space. MIL-STD-19500 /228 5.0 product for packing code suffix "G" RoHS Halogen free product for packing code suffix "H" • 0.146(3.7) 0.130(3.3) 10 7.0 C cb 3.0 0.071(1.8) 0.056(1.4) 2.0 1.0 0.7 0.5 QT 0.3 Mechanical data 3.0 QA 0.2 • Epoxy : UL94-V0 rated flame retardant 2.0 : Molded plastic, SOD-123H • Case 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.1 100.031(0.8) Typ. 20 VRRM 12 20 13 30 7.0 Maximum RMS Voltage VRMS 14 Maximum DC5.0 Blocking Voltage 20 Forward 30 t d@VBE(off) = 0V 20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 10 Maximum Recurrent Peak Reverse Voltage 10 Average t r, RISE TIME (ns) t , TIME (ns) t r @V =30V Ratings at 25℃ ambient temperature unless otherwise specified. CC @V CC=10V 30half wave, 60Hz, resistive of inductive tload. Single phase r t d@VBE(off) = 2.0V For capacitive load, derate current by 20% Maximum V CC= 30V I C / I B =10 70 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 20 0.031(0.8) 200 300 Typ. 500 100 100 Marking Code 70 Dimensions in inches and (millimeters) I C /I B = 10 70 50 Figure 4. Charge Data Figure 3. Capacitance • Polarity : Indicated by cathode band • Mounting Position : Any 100 • Weight : Approximated 0.011 gram 30 I C , COLLECTOR CURRENT (mA) VOLTAGE (VOLTS) MethodREVERSE 2026 50 0.012(0.3) Typ. V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (nC) CAPACITANCE (pF) • Low30power loss, high efficiency. • High current capability, low forward voltage drop. 20 surge capability. • High C eb • Guardring for overvoltage protection. • Ultra high-speed switching. 10 epitaxial planar chip, metal silicon junction. • Silicon 7.0 parts meet environmental standards of • Lead-free 20 VDC 30 50 70 Rectified Current 200 IO 100 300 40 10 14 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 7.0 28 35 42 56 70 105 140 Volts 30 5.0 40 50 200 Volts 500 10 20 Turn–On Time Typical Junction Capacitance (Note 1) -55 to +125 TJ Operating Temperature Range Storage Temperature Range 40 120 CJ 200 70 100 100 200 150 300 Amp 500 Amp Figure 6. Rise Time RΘJA Typical Thermal Resistance (Note 2) 80 50 1.0 I C , COLLECTOR CURRENT (mA) 30 I Cms , COLLECTOR CURRENT (mA) Peak Forward Surge Current 8.3 single half sine-wave IFSM superimposed on rated load (JEDEC method) Figure 5. 60 30 ℃/W PF -55 to +150 I C/I B = 20 TSTG ℃ - 65 to +175 ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC t s , RISE TIME (ns) 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 70 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 50 @T A=125℃ I C/I B = 10 0.50 0.70 0.85 0.5 IR 10 t s’ = t s – 1/8 t f I B1 = I B2 0.9 0.92 Volts mAmp 1- Measured at 1 MHZ and applied reverse voltage30 of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4403LT1 Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE SMALL–SIGNAL CHARACTERISTICS Package outline NOISE FIGURE Features V CE = –10 Vdc, T A = 25°C • Batch process design, excellent power dissipation offers Bandwidth = 1.0 Hz better reverse leakage current and thermal resistance. SOD-123H • Low 10 profile surface mounted application in order to 10 optimize board space. • Low power loss, high efficiency. • High8 current capability, low forward voltage drop. • High surge capability. I C = 1.0 mA, R S = 430Ω for overvoltage protection. • Guardring 6 I C = 500 µA, R S = 560Ω • Ultra high-speed switching. I C = 50 µA, R S = 2.7kΩ epitaxial planar chip, metal silicon junction. • Silicon 4 I = 100 µA, R S = 1.6 kΩ standards of • Lead-free parts meet Cenvironmental MIL-STD-19500 /228 suffix SOURCE "G" • RoHS 2 product for packing RScode = OPTIMUM RESISTANCE Halogen free product for packing code suffix "H" f = 1.0 kHz 0.146(3.7) 0.130(3.3) NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 Mechanical data 0 0.012(0.3) Typ. I C = 50 µA 100 µA 500 µA 1.0 mA 6 4 0.071(1.8) 0.056(1.4) 2 0 0.010.02 0.05 0.1 0.2 flame 0.5 1.0 2.0 5.0 10 20 50 100 : UL94-V0 rated retardant • Epoxy f , FREQUENCY (kHz) • Case : Molded plastic, SOD-123H , Figure 8. Frequency Effects • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.040(1.0) 50 100 200 500 1k 2k 5k 10k0.024(0.6) 20k 50k R S, SOURCE RESISTANCE (Ω) 0.031(0.8) Typ. 0.031(0.8) Typ. Figure 9. Source Resistance Effects h PARAMETERS Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) • Mounting Position : Any This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, • Weight : Approximated 0.011 gram a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 h fe, CURRENT GAIN Marking Code 300 12 20 200 VRRM 13 30 MMBT4403LT1 UNIT 1 14 VRMS MMBT4403LT1 UNIT 2 Maximum RMS100 Voltage Maximum DC Blocking Voltage 70 Maximum Average 50 Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 30 0.1 load (JEDEC 0.2 0.3method) 0.5 0.7 superimposed on rated 1.0 IO IFSM 2.0 21 20 VDC 30 7.0 5.0 CHARACTERISTICS VF Maximum Average 2.0 Reverse Current at @T A=25℃ IR @T A=125℃ 1.0 0.5 2- Thermal Resistance From Junction to Ambient 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio 2012-06 2012-11 10 100 115 150 120 200 Volts 28 1 35 42 56 70 105 140 Volts 40 0.5 50 60 80 100 150 200 Volts 1.0 30 0.2 0.1 0.2 0.3 0.5 0.7 Amps 1.0 2.0 3.0 7.0 5.0 Amps 10 I C , COLLECTOR (mAdc) 40 CURRENT ℃/W Figure 11.120 Input Impedance 500 PF -55 to +150 ℃ - 65 to +175 100 0.50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 18 80 ℃ MMBT4403LT1 UNIT 1 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL UNIT MMBT4403LT1 2 5.0 Voltage at 1.0A DC Maximum Forward NOTES: 16 60 -55 to +125 TSTG 10 15 50 TJ 20 Storage Temperature Range 5 CJ 10. Current Gain Operating Temperature Range 14 40 2 10 h oe , OUTPUT ADMITTANCE ( µmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Typical Junction Capacitance (Note 1) Figure MMBT4403LT1 UNIT 2 20 0.1 3.0 I C (Note , COLLECTOR CURRENTR(mAdc) Typical Thermal Resistance 2) ΘJA Rated DC Blocking Voltage MMBT4403LT1 UNIT 1 50 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Maximum Recurrent Peak Reverse Voltage h ie, INPUT IMPEDANCE (kΩ) 1000 Ratings at 25℃ ambient temperature unless otherwise specified. 700 Single phase half wave, 60Hz, resistive of inductive load. 500 For capacitive load, derate current by 20% 10 0.70 50 0.9 0.85 0.92 0.5 mAmp 10 20 Volts MMBT4403LT1 UNIT 1 10 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mAdc) Figure 13. Output Admittance WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4403LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers STATIC CHARACTERISTICS better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. h FE , NORMALIZED CURRENT GAIN • Low3.0power loss, high efficiency. V CE= 1.0 V low forward voltage drop. • High2.0current capability, V CE= 10 V • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. 1.0 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. T J = 125°C 25°C 0.071(1.8) 0.056(1.4) –55°C 0.7 MIL-STD-19500 /228 RoHS 0.5 product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.3 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.2 Molded0.2 plastic, SOD-123H • Case :0.1 0.031(0.8) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 I , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 0.031(0.8) 300 Typ. 500 20 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase0.6 half wave, 60Hz, resistive of inductive load. I C=1.0 mA 10 mA For capacitive load, derate current by 20% RATINGS 0.4 100mA 500mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 0.2 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 0 0.005 0.01 Average Forward 0.02 Rectified 0.07 0.1 IO 0.03 0.05 Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM CJ Operating Temperature Range TJ T J = 25°C V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B =10 V BE @ V CE =1.0 V Maximum Forward Voltage at 1.0A DC 0.4 NOTES: 0.1 0.2 0.5 1.0 2.0 5.0 20 30 200 Volts Amp 50 Amp 40 120 ℃/W PF -55 to +150 ℃ - 65 θto +175 for VCE(sat) VC 0 IR ℃ – 0.5 0.70 –1.0 0.9 0.85 0.92 0.5 mAmp 10 –1.5 Volts θ VS for V BE –2.0 B – 2.5 10 20 50 100 200 Figure 16. “On” Voltages 2012-06 10 140 30 + 0.5 0.50 I C , COLLECTOR CURRENT (mA) 2012-11 7.0 Volts Volts -55 to +125 0.2 2- Thermal Resistance From Junction to Ambient 0 5.0 1.0 3.0 1- Measured at 1 MHZ and applied reverse voltage 4.0 VDC. V @ I /I of =10 C 2.0 I B , BASE CURRENT (mA) VF @T A=125℃ CE(sat) 1.0 120 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.7 TSTG CHARACTERISTICS 0.6 0.5 Figure 15. Collector Saturation Region 10 Capacitance (Note 1) Typical Junction 0.3 RΘJA Typical Thermal Resistance (Note 2) Storage Temperature Range 0.8 0.2 COEFFICIENT (mV/ °C) Maximum 70 Figure 14. DC Current Gain • Polarity : Indicated by cathode band • Mounting Position : Any 1.0 • Weight : Approximated 0.011 gram 50 C Method 2026 0.8 30 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT4403LT1 THRU General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H SOT-23 • RoHS product for packing code suffix "G" .006(0.15)MIN. MIL-STD-19500 /228 .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon.122(3.10) • Lead-free parts meet environmental standards of .106(2.70) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .008(0.20) .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .070(1.78) RATINGS 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM .080(2.04) RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .020(0.50) TJ TSTG .012(0.30) Operating Temperature Range Storage Temperature Range CHARACTERISTICS -55 to +125 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .083(2.10) .110(2.80) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.50 0.70 Dimensions in inches and (millimeters) IR @T A=125℃ 0.85 0.5 10 0.9 0.92 Volts mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4403LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. high efficiency. • Low power loss, Device PN Packing 0.146(3.7) 0.130(3.3) voltage drop. • High current capability, low forward (1) MMBT4403LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.