WILLAS FM120-M+ 2SC2412KxLT1THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product NPN Silicon declare that the material of product • WeFeatures Package compliance with RoHS requirements. outline Pb-Free packagedesign, is available excellent power dissipation offers • Batch process RoHS product forleakage packingcurrent code suffix ”G” resistance. better reverse and thermal SOD-123H surface mounted application in order • Low profile Halogen free product for packing code suffix “H” to optimize board space. Moisture Sensitivity Level 1 • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) ORDERING INFORMATION capability, low forward voltage drop. • High current 0.012(0.3) Typ. • High surge capability. Marking Shipping Guardring for overvoltage protection. •Device Ultra high-speed switching. • 3000 Tape & Reel BQ 2SC2412KQLT1 • Silicon epitaxial planar chip, metal silicon junction. BR 3000 of Tape & Reel 2SC2412KRLT1 standards • Lead-free parts meet environmental 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 2SC2412KSLT1 3000 Tape & Reel code suffix "G" • RoHS product for packing G1F Halogen free product for packing code suffix "H" Mechanical MAXIMUM RATINGS SOT– 23 data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Rating Symbol Value Unit • Case : Molded plastic, SOD-123H , 50 V Collector–Emitter Voltage CEO • Terminals :Plated terminals,V solderable per MIL-STD-750 Collector–Base Voltage Method 2026 V CBO • Polarity :Voltage Indicated by cathode Emitter–Base V EBOband Position : Any • Mounting Collector Current — Continuous IC • Weight : Approximated 0.011 gram Collector power dissipation PC Junction temperature MAXIMUM 60 V 7.0 V 150 mAdc 0.2 W 0.031(0.8) Typ. 0.031(0.8) Typ. 3 COLLECTOR 1 BASE Dimensions in inches and (millimeters) 2 EMITTER 150 °C T j AND ELECTRICAL RATINGS CHARACTERISTICS Ratings at 25℃ ambient temperature unless specified. -55 ~+150 °C Storage temperature T stg otherwise Single phase half wave, 60Hz, resistive of inductive load. DEVICE MARKING For capacitive load, derate current by 20% 2SC2412KQLT1=BQ 2SC2412KRLT1 =BRSYMBOL 2SC2412KSLT1 =G1F FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code 12 13 noted.) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise 20 30 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Characteristic VRMS Collector–Emitter Breakdown Voltage Maximum DC Blocking Voltage VDC (IC = 1 mA) Symbol 14 21 V 20 (BR)CEO 30 Min 14 40 28 50 40 15 50 Typ 35 —50 16 60 Max 42 — 60 18 80 Unit 56 V80 10 100 115 150 120 200 V 70 105 140 V 100 150 200 V IO 1.0 Emitter–Base Breakdown Voltage 7 — — V V (BR)EBO (IE = 50Surge µA) Current 8.3 ms single half sine-wave Peak Forward 30 IFSM Collector–Base Breakdown Voltage superimposed on rated load (JEDEC method) 60 — — V V (BR)CBO (ICThermal = 50 µA) 40 Typical Resistance (Note 2) RΘJA — Collector Current(Note 1) Typical JunctionCutoff Capacitance CJ — 0.1 120 µA I CBO (VCB Temperature = 60 V) -55 to +125 -55 to +150 Operating Range TJ Emitter cutoff current - 65 to +175 Storage Temperature Range TSTG — — 0.1 µA I EBO (VEB = 7 V) Collector-emitter saturation voltage FM130-MH — FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL FM120-MH — 0.4 V V CE(sat) (IC/ IForward / 5matA) 0.9 B = 50 mA Maximum Voltage 1.0A DC 0.92 VF 0.50 0.70 0.85 DC current ratio h FE 120 –– 560 0.5 –– Maximum Averagetransfer Reverse Current at @T A=25℃ IR = 6 V, IVoltage C= 1mA) 10 @T A=125℃ Rated(V DCCEBlocking Transition frequency — 180 –– MHz fT NOTES: (V CE = 12 V, I E= – 2mA, f =30MHz ) 1- Measured 1 MHZ and applied reverse voltage of 4.0 VDC. Outputatcapacitance — 2.0 3.5 pF C ob 2- Thermal Resistance Junction to Ambient (V CB = 12 V, I From E= 0A, f =1MHz ) Maximum Average Forward Rectified Current A A ℃ U V m h FE values are classified as follows: * hFE 2012-06 2012- Q 120~270 R 180~390 S 270~560 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process emitter design, excellent power dissipation offers • Batch Fig.1 Grounded propagation characteristics Fig.2 Grounded emitter output characteristics( ) SOD-123H 0.50mA 100 T A = 25°C 0.146(3.7) 0.130(3.3) I C, COLLECTOR CURRENT (mA) 25°C – 55°C T A = 100° C I C, COLLECTOR CURRENT (mA) better reverse leakage current and thermal resistance. profile surface mounted application in order to • Low 50 VCE= 6 V optimize board space. power loss, high efficiency. • Low 20 • High current capability, low forward voltage drop. 10 • High surge capability. 50 for overvoltage protection. • Guardring • Ultra high-speed switching. 2 epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free 1 MIL-STD-19500 /228 product for packing code suffix "G" 0.5 • RoHS Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 80 60 0.071(1.8) 0.056(1.4) 40 20 0.2 Mechanical data 0.1 : UL94-V0 rated flame retardant • Epoxy 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 plastic, SOD-123H • Case : Molded V BE , BASE TO EMITTER VOLTAGE(V) , • Terminals :Plated terminals, solderable per MIL-STD-750 0 0 Method 2026 I C, COLLECTOR CURRENT (mA) Dimensions in inches and (millimeters) h FE, DC CURRENT GAIN 200 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 16 VDC 2020 30 0 4 Maximum DC 0Blocking Voltage 100 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Recurrent Peak Reverse Voltage 8 12 20 10 0.2 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 150 200 Vo 40 0.5 Maximum Average Forward Rectified Current IO (V) V CE , COLLECTOR TO EMITTER VOLTAGE superimposed on rated load (JEDEC method) TSTG h FE, DC CURRENT GAIN CHARACTERISTICS VF Reverse Current at @T A=25℃ IR @T A=125℃ 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 2012-06 200 A A ℃ 120 P -55 to +150 ℃ - 65 to +175 ℃ 0.2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Storage Temperature Range 100 100 Fig.6 Collector-emitter saturation voltage vs. 40 collector current 0.5 -55 to +125 TJ Operating500 Temperature Range 50 I C, COLLECTOR1.0 CURRENT (mA) CJ Typical Junction Capacitance (Note 1) 80 20 10 30 RΘJA Typical Thermal Resistance (Note 2) Maximum100 Average 605 2 Fig.5 DC current gain vs. collector current ( ) 200 150 IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 2012- 0.040(1.0) 0.024(0.6) 2.0 8 Marking Code 2 1.6 500 6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 4 NOTES: 1.2 Fig.4 DC current gain vs. collector current ( ) • Polarity : Indicated by cathode band 10 • Mounting Position : Any • Weight : Approximated 0.011 gram 0.8 V , COLLECTOR TO EMITTER VOLTAGE (V) 0.031(0.8) Typ. 0.031(0.8) Typ. CE Fig.3 Grounded emitter output characteristics( ) 0.4 100 200 0.50 0.70 0.1 0.9 0.85 0.5 0.92 mA 10 0.05 V 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Fig.7 Collector-emitter saturation voltage vs. optimize boardcollector space. current ( ) SOD-123H power loss, high efficiency. • Low 0.5 • High current capability, low forward voltage drop. • High surge capability. 0.2 for overvoltage protection. • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 0.1 • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 0.05 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.02 • Epoxy : UL94-V0 rated flame retardant 0.01 : Molded plastic, SOD-123H • Case , 0.2 0.5 1 2 5 10 20 50 100 200 • Terminals :Plated terminals, solderable per MIL-STD-750 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) • Low profile surface mounted application in order to Fig.8 Collector-emitter saturation voltage vs. collector current ( ) 0.146(3.7) 0.130(3.3) 0.5 0.2 0.071(1.8) 0.056(1.4) 0.1 0.05 0.02 0.040(1.0) 0.024(0.6) 0.01 0.031(0.8) Typ. 0.2 0.5 I C, COLLECTOR CURRENT (mA) Method 2026 RATINGS 200 VRRM 12 20 13 30 21 30 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 100 RMS Voltage 50 –0.5 –1 –10 –20 Peak Forward Surge Current 8.3–2ms single–5half sine-wave superimposed on rated load I(JEDEC method) , EMITTER CURRENT (mA) E –50 –100 50 100 10 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 50 60 80 100 150 200 Vo 2 40 0.2 0.5 C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) A 2 5 10 20 A 50 40 TO BASE VOLTAGE (V) V EB, EMITTER 120 Typical Junction (Note 1)time constant vs.emitter CJ Fig.11Capacitance Base-collector current -55 to +125 Operating Temperature Range TJ Storage Temperature Range 1.0 1 30 1 V CB, COLLECTOR TO BASE VOLTAGE (V) RΘJA Typical Thermal Resistance (Note 2) ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ 200 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF 100 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Rated DC Blocking Voltage 50 NOTES: 20 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH 5 Maximum Recurrent Peak Reverse Voltage 10 20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 500 Marking Code 5 Dimensions in inches and (millimeters) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 2 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Maximum 0.031(0.8) Typ. 1 I C, COLLECTOR CURRENT (mA) • Polarity : Indicated by cathode band Gain bandwidth Mounting Position : Any product vs. emitter current •Fig.9 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 0.50 0.70 0.85 0.5 IR 0.9 0.92 V 10 mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 20 2- Thermal Resistance From Junction to Ambient 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOT-23 SOD-123H optimize board space. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) • Lead-free parts meet environmental standards of .106(2.70) Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Mechanical data 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .008(0.20) .080(2.04) .070(1.78) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ CHARACTERISTICS VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ NOTES: -55 to +125 40 120 A A ℃ P -55 to +150 - 65 to +175 TSTG .020(0.50) .012(0.30) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Storage Temperature Range Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .083(2.10) .110(2.80) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR Dimensions in inches and (millimeters) 10 V m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. high efficiency. • Low power loss,Device PN Packing 0.146(3.7) 0.130(3.3) voltage drop. • High current capability, (2) low forward (1) 2SC2412K x Tape&Reel: 3 Kpcs/Reel capability. LT1 G ‐WS • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. • Silicon (2) epitaxial CLASSIFICATION OF h FE RANK planar chip, metal silicon junction. Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt VRRM Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp on rated load (JEDEC method) superimposed ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.