WILLAS FM120-M+ 2SB1440 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse TRANSISTOR (PNP)leakage current and thermal resistance. • Low profile surface mounted application in order to FEATURES optimize board space. power loss, high efficiency. • Low z Low collector-emitter saturation voltage VCE(sat) • High current capability, low forward voltage drop. z For low-frequency output amplification • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring high-speed • Ultraproduct RoHS forswitching. packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free SOD-123H SOT-89 0.146(3.7) 0.130(3.3) 2. COLLECTOR Moisture Sensitivity MIL-STD-19500 /228 Level 1 • RoHS product for packing code suffix "G" z Value Unit : UL94-V0 ratedVoltage flame retardant VCBO • EpoxyCollector-Base -50 V : Molded plastic, SOD-123H Voltage VCEO • Case Collector-Emitter -50 VEBO • Terminals :Plated terminals, solderable per MIL-STD-750 IC Collector Current -Continuous • Polarity : Indicated by cathode band Collector Power : AnyDissipation • Mounting Position Junction Temperature • Weight : Approximated 0.011 gram PC TJ Emitter-Base Voltage Tstg -5 V -2 A 500 mW 150 ℃ -55~150 ℃ Method 2026 Storage Temperature 2 3 0.040(1.0) 0.024(0.6) V , 0.071(1.8) 0.056(1.4) 1 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Halogen free product for packing code suffix "H" Mechanical data Symbol Parameter 0.012(0.3) Typ. 1. BASE 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% RATINGS V(BR)CBO Maximum Recurrent Peak Reverse Voltage Marking Code Collector-emitter breakdown voltage Maximum DC Blocking Voltage Emitter-base breakdown 14 40 15 50 16 60 VRMS 14 21 28 35 42 40 50 60 IFSM RΘJA Operating Temperature DC current gain Range J hC FE1 VCE=-2V, = IC TSTG hFE2 VCE=-2V, = IC -1A TJ Storage Temperature Range -200mA -55 to +125 Transition frequency @T A=125℃ NOTES: Unit -50 -50 18 80 10 100 115 150 56 70 105 100 150 -5 80 40 120120 V 120 200 Vol 140 Vol V 200 Vol V -1 μA -1 μA Am Am ℃/W PF 340 -55 to +150 ℃ - 65 to +175 60 VF 0.50 0.70 IC=-1A, IB -50mA VBE(sat) Base- emitter voltage Maximum Averagesaturation Reverse Current at @T A=25℃ = Max ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH-0.3 FM1150-MHV FM1200-MH = IC=-1A,FM130-MH IB -50mA V SYMBOL CE(sat) FM120-MH Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage Typ 1.0 30 = VEB=-5V, IC 0 IEBO Typical Junction Capacitance (Note 1) CHARACTERISTICS Collector-emitter saturation voltage IE20 =-10μA,30IC=0 IO Peak Forward Surge Current 8.3 ms single half sine-wave 13 30 = VCB=-50V, IE 0 I CBO Collector cut-off current Typical Thermal Resistance (Note 2) VRRM 12 20 VDC V(BR)EBO voltage superimposed on rated load (JEDEC method) Emitter cut-off current IC=-10μA, IE=0 = V(BR)CEO IC=-1mA, IB 0 Maximum Average Forward Rectified Current Min SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Collector-base breakdown voltage Maximum RMS Voltage Test conditions 0.5 IR VCE=-10V, = IC 50mA, =f 200MHz fT 1Measured atoutput 1 MHZ and applied reverse voltage of 4.0 VDC.C Collector capacitance ob 0.85 10 0.9 -1..2 80 VCB=-10V, IE=0, f=1MHz 0.92 V UN Vol mAm MHz 60 pF 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF h FE1 Rank Range Marking 2012-06 2012-0 R S 120-240 170-340 1L WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1440THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Package outlineh Static Characteristic -0.22 Features Pb Free Product FE VCE= -2V -1.0mA COMMONoffers Batch process design, excellent power dissipation •- 0.20 EMITTER SOD-123H a optimize board space. MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" o hFE -0.8mA Low power loss, high efficiency. -0.7mA •- 0.15 • High current capability, low forward voltage drop. -0.6mA • High surge capability. Guardring for overvoltage protection. -0.5mA •- 0.10 • Ultra high-speed switching. -0.4mA • Silicon epitaxial planar chip, metal silicon junction. -0.3mAof • Lead-free parts meet environmental standards T =100 C o Ta=25 C - 2 100 IB=-0.1mA 50 - 3 - 4 - 6 5 - 1E-3 - 7 • Epoxy : UL94-V0 rated flame retardant(V) COLLECTOR-EMITTER VOLTAGE V • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 COLLECTOR CURRENT Method 2026 VCEsat —— IC Polarity : Indicated by cathode band • • Mounting Position : Any • Weight : Approximated 0.011 gram BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) (A) 0.031(0.8) Typ. IC Dimensions in inches and (millimeters) - 1000 Ratings at 25℃ ambient temperature unless otherwise specified. - 100 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS - 900 - 800 Ta=25℃ - 700 600 Ta=100℃FM1150-MH FM1200-MH UNI FM150-MH FM160-MH FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH- FM140-MH Ta=100℃ VRRM 12 20 13 30 - 500 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 - 400 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Ta=25℃ Maximum Recurrent Peak Reverse Voltage Forward - 0.01 - 1E-3Rectified Current IO IFSM - 0.1 COLLECTOR CURRENT I (A) C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) / C ob Typical Junction Capacitance C (Note 1)ib —— 500 TJ Storage Temperature Range (pF) CHARACTERISTICS 600 -55 to +125 - 0.1 IC - 1 Amp - 2 (A) Amp ℃/W Ta PF -55 to +150 ℃ - 65 to +175 o ℃ 500 VF C @T A=125℃ 0.50 400 IR Cib NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Cob 0.70 0.9 0.85 0.92 0.5 mAm 10 300 Volts 200 100 0 -1 REVERSE VOLTAGE 2012-0 40 P —— 120 c β=20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ 100 2012-06 1.0- 0.01 COLLECTOR CURRENT 30 - 1E-3 Ta=25 C Maximum Forward Voltage at 1.0A DC 10 - 0.1 - 300 - 1E-4 - 2 f=1MHz IE=0 / IC=0 TSTG CAPACITANCE - 1 RΘJA VCB / VEBCJ Operating Temperature Range Rated DC Blocking Voltage β=20 COLLECTOR POWER DISSIPATION Pc (mW) - 10 Maximum Average - 1E-4 VBEsat —— - 1100 - 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code IC 0.031(0.8) Typ. - 700 0.040(1.0) - 1 0.024(0.6) - 0.1 - 0.01 CE 0.071(1.8) 0.056(1.4) -0.2mA Mechanical data 0.00 - 1 0.012(0.3) Typ. 200 - 0.05 0 a 0.146(3.7) 0.130(3.3) 300 DC CURRENT GAIN COLLECTOR CURRENT IC (A) better reverse leakage current and thermal resistance. -0.9mA T =25℃ • Low profile surface mounted application in order to • —— IC 800 - 10 V (V) 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1440 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) RATINGS .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code .154(3.91) Maximum Recurrent Peak Reverse Voltage 12 20 VRRM .023(0.58) 13 30 40 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage 14 VRMS .016(0.40) 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TJ TSTG 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) Am Am -55 to +150 - 65 to +175 .017(0.44) FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH .014(0.35) .118TYP 0.9 0.92 VF 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 @T A=125℃ 0.5 IR 10 ℃/ P ℃ ℃ UN Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SB1440 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing 0.012(0.3) Typ. • High current capability, low forward voltage drop. (3) (1) (2) capability.–SOT89 G ‐WS • High surge 2SB1440 x Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) CASE:SOT‐89 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of (3) CLASSIFICATION OF h FE RANK MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phasespecification herein, to make corrections, modifications, enhancements or other half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) use of any product or circuit. ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature Range TSTG - 65 to +175 ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.