WILLAS 1 FM1 TH THRU 0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-1$'3ACKAGE SOD-123+ PACKAGE 1 FM12 Pb Fre Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURES * * * * * optimize board space. Low cost • Low power loss, high efficiency. Low leakage current capability, low forward voltage drop. • High Low forward voltage drop surgecapability capability. • High High current RoHS product for code suffix "G" forpacking overvoltage protection. • Guardring Halogen product forswitching. packing code suffix "H" high-speed • Ultra free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. DO-201AD Level chip, 1 * Moisture epitaxial planar metal silicon junction. • Silicon Sensitivity 0.071(1.8) 0.056(1.4) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 MECHANICAL DATA * * * * * Case: Molded plastic product for packing code suffix "G" • RoHS Epoxy: UL 94V-O rate flame retardant Halogen free product for packing code suffix "H" Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: grams rated flame retardant : UL94-V0 • Epoxy1.19 Mechanical data 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ Method MAXIMUM RATINGS AND2026 ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. • Polarity : Indicated by cathode band Mounting Position : Any by 20%. For• capacitive load, derate current • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Single phase, half wave, 60 Hz, resistive or inductive load. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) Ratings at 25℃ ambient temperature unless otherwise specified. SYMBOL RATINGS Single phase half wave, 60Hz, resistive of inductive load. VRRM Maximum Recurrent Peak Reverse Voltage ForMaximum capacitive derate current by 20% VRMS RMSload, Voltage Maximum DC Blocking Voltage RATINGS Maximum Average Forward Rectified Current .375” Code (9.5mm) lead length at T L = 105oC Marking 50 100 200 400 600 800 1000 Volts 35 70 140 280 420 560 700 Volts 50 100 200 400 600 800 1000 Volts Amps SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150IO Peak Forward Surge Peak CurrentReverse 8.3 ms single half sine-wave Maximum Recurrent Voltage VRRM I FSM 12 20 13 30 14 40 Maximum Voltage Typical RMS Junction Capacitance (Note) VRMS CJ 14 21 28 superimposed on rated load (JEDEC method) Typical DC Thermal Resistance Maximum Blocking Voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current VDC 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS JC VDCRθJ A / Rθ20 T J , T STG IO 40 50 150 15 16 60 18 80 35 40 42 56 60 80 3050 / 20 -55 to + 150 ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) IFSM SYMBOL CHARACTERISTICS superimposed on rated load (JEDEC method) VF Maximum Instantaneous Forward Voltage at 3.0A DC Maximum DC Reverse Current @T A = 25 oC Typical Thermal Resistance (Note 2) RΘJA o at Rated DC Blocking Voltage @T A = 100 C IR Typical Junction Capacitance (Note 1) CJ Maximum Full Load Reverse Current Average, Full Cycle o Operating Temperature TJ .375” (9.5mm) lead lengthRange at TL = 75 C Peak Forward Surge Current 8.3 ms single half sine-wave 30 3.0 1N5400 1N5401 1N5402 1N5404 1N5406 1.1 5.0 50 -55 to +125 30 1.0 30 1N5407 40 120 10 115 150 70 105 100 Amps pF C/100 W 0 C 0 150 1N5408 UNITS Volts uAmps uAmps -55 to +150 - 65 to +175 NOTESTemperature : Measured at 1 Range MHZ and applied reverse voltage of 4.0 volts TSTG Storage CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 2013-08 Maximum Average Reverse Current at @T A=25℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-M VF IR 0.50 0.70ELECTRONIC 0.85 CORP. 0.9 WILLAS 0.5 WILLAS 1 FM1 TH THRU 0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V 1 FM12 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-1$'3ACKAGE SOD-123+ PACKAGE Pb Fre Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 200 optimize board space. NON-REPETITIVE • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 100 0.012(0.3) Typ 50 REP 8.3ms Single Half Sine-Wave (JEDED Method) MIL-STD-19500 /228 10 • RoHS product for packing code suffix "G" 1 5 Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) ETIT IVE 10 50 100 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Ty Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS 2013-08 Maximum Average Reverse Current at SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150- VF Maximum Forward Voltage at 1.0A DC @T A=25℃ IR 0.50 0.70 0.85 WILLAS ELECTRONIC CORP. 0.5 0.9 WILLAS 1 0 AMP GENERAL PURPOSE SILICON RECTIFIER - 50V-1000V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-1$'3ACKAGE SOD-123+ PACKAGE Features FM120-M THRU THRU 1 FM1200-M Pb Free Produ Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to Ordering Information: optimize board space. SOD-123H 0.146(3.7) loss, high efficiency. • Low power Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) Part Number ‐T surge capability. G ‐WS • High Tape & Ammo Pack box:1.2 Kpcs/box (1) (2) protection. for overvoltage • Guardring G ‐WS Part Number ‐F • Ultra high-speed switching. Note: (1) Packing code, Tape & Ammo Pack box epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of •(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS reserves the right to make changes without notice to any product ***Disclaimer*** SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS specification herein, to make corrections, modifications, enhancements or other 12 13 14 15 16 18 10 115 120 changes. WILLAS or anyone on its behalf assumes no responsibility or liability 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS for any errors or inaccuracies. Data sheet specifications and its information Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC contained are intended to provide a product description only. "Typical" parameters Maximum Average Forward Rectified Current IO 1.0 which may be included on WILLAS data sheets and/ or specifications can Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM and do vary in different applications and actual performance may vary over time. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS does not assume any liability arising out of the application or 120 Typical Junction Capacitance (Note 1) CJ use of any product or circuit. -55 to +125 -55 to +150 Operating Temperature Range TJ 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 life‐saving implant or other applications intended for life‐sustaining or other related 0.5 Maximum Average Reverse Current at @T A=25℃ IR applications where a failure or malfunction of component or circuitry may directly 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. of WILLAS. Customers using or selling WILLAS components for use in 2- Thermal Resistance From Junction to Ambient such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code 2012-06 2013-08 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.