RadPal Characterization Summary (1/96)

UTMC APPLICATION NOTE
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UT22VP10 RADPAL
Characterization Summary
Table 1: AC Electrical Characterization Summary
1/96
Parameter
Sample
Size
Worst Case
Conditions
tPD
56
17.3ns
-55°C,+125°C
tEA
3
21.1ns
-55°C,+125°C
tER
3
19.26ns
-55°C,+125°C
tH
56
0.40ns
-55°C,+125°C
tSU
56
7.6ns
-55°C,+125°C
tP
56
19.5ns
-55°C,+125°C
tCO
56
11.9ns
-55°C,+125°C
tCO2
56
21.1ns
-55°C,+125°C
tWL
4
<10.0ns
-55°C,+125°C
tWH
4
<10.0ns
-55°C,+125°C
tCF
1
8.0ns
-55°C,+125°C
tAW
56
8.5ns
-55°C,+125°C
tAR
56
2.3ns
-55°C,+125°C
tAP
56
15.4ns
-55°C,+125°C
tSPR
56
1.3ns
-55°C,+125°C
fMAX1
56
51.3MHz
-55°C,+125°C
fMAX2
56
>50.0 MHz
-55°C,+125°C
fMAX3
56
50.2 MHz
-55°C,+125°C
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Table 2: DC Electrical Characterization Summary
1/96
Parameter
Sample
Size
Worst Case
Conditions
VIL
4
2.16V
CMOS
-55°C,+125°C
VIH
4
2.36V
CMOS
-55°C,+125°C
VIL
4
1.48V
TTL
-55°C,+125°C
VIH
4
2.06V
TTL
-55°C,+125°C
VOL
5
0.007V
CMOS
-55°C,+125°C
VOH
5
4.465V
CMOS
-55°C,+125°C
VOL
5
0.252V
TTL
-55°C,+125°C
VOH
5
4.373V
TTL
-55°C,+125°C
IIN
10
0.032µA
-55°C,+125°C
IOS
2
123.55mA
-55°C,+125°C
IOZ
10
1.886µA
-55°C,+125°C
ICC
4
98.4mA
-55°C,+125°C
ESD
3
<500V
25°C
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