HMC413QS16G / 413QS16GE v04.0505 11 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Typical Applications Features This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: Gain: 23 dB • Cellular / PCS / 3G 42% PAE • Portable & Infrastructure Supply Voltage: +2.75V to +5V • Wireless Local Loop Power Down Capability Saturated Power: +29.5 dBm Low External Part Count LINEAR & POWER AMPLIFIERS - SMT Included in the HMC-DK002 Designer’s Kit Functional Diagram The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V Vs= 3.6V Parameter Vs= 5V Frequency 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.1 GHz 2.1 - 2.2 GHz Gain Units Min. Typ. 18 19 18 17 21 22 21 20 Max. Min. Typ. 19 20 19 18 22 23 22 21 1.6 - 2.2 GHz 0.025 1.6 - 2.2 GHz 10 10 Output Return Loss 1.6 - 2.2 GHz 8 9 dB Output Power for 1 dB Compression (P1dB) 1.6 - 1.7 GHz 1.7 - 2.2 GHz 26 27 dBm dBm Saturated Output Power (Psat) 1.6 - 1.7 GHz 1.7 - 2.2 GHz 28.5 29.5 dBm dBm Output Third Order Intercept (IP3) 1.6 - 1.7 GHz 1.7 - 2.0 GHz 2.0 - 2.2 GHz 39 40 39 dBm dBm dBm Noise Figure 1.6 - 2.2 GHz 5.5 5.5 dB 0.002/220 0.002/270 mA 7 7 mA 80 80 ns Supply Current (Icq) Vpd= 0V/3.6V Control Current (Ipd) Vpd= 3.6V tON, tOFF 23 24 0.025 dB dB dB dB Input Return Loss 20 21 0.035 Max. Gain Variation Over Temperature Switching Speed 11 - 50 General Description 23 24 25.5 26.5 32 33 32 35 36 35 36 37 36 0.035 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB/°C dB HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Gain vs. Temperature, Vs= 5V 30 30 25 25 20 20 GAIN (dB) 15 +25 C +85 C -40 C 10 5 1.5 1.7 1.9 2.1 2.3 0 1.3 2.5 1.5 FREQUENCY (GHz) -4 -4 RETURN LOSS (dB) RETURN LOSS (dB) 0 -8 -12 S11 -16 1.9 2.1 2.3 1.5 24 P1dB (dBm) P1dB (dBm) 24 20 +25 C +85 C -40 C 16 8 4 2.3 2.5 2.3 2.5 +25 C +85 C -40 C 12 4 FREQUENCY (GHz) 2.1 20 8 2.1 1.9 P1dB vs. Temperature, Vs= 5V 28 1.9 1.7 FREQUENCY (GHz) 28 1.7 2.5 -12 32 1.5 2.3 -8 32 0 1.3 2.5 S22 -20 1.3 2.5 P1dB vs. Temperature, Vs= 3.6V 12 2.3 S11 FREQUENCY (GHz) 16 2.1 -16 S22 1.7 1.9 Return Loss, Vs= 5V 0 1.5 1.7 FREQUENCY (GHz) Return Loss, Vs= 3.6V -20 1.3 11 +25 C +85 C -40 C 10 5 0 1.3 15 LINEAR & POWER AMPLIFIERS - SMT GAIN (dB) Gain vs. Temperature, Vs= 3.6V 0 1.3 1.5 1.7 1.9 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 51 HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz 28 28 24 24 20 20 16 Psat (dBm) 32 +25 C +85 C -40 C 12 16 8 4 4 1.5 1.7 1.9 2.1 2.3 0 1.3 2.5 +25 C +85 C -40 C 12 8 1.5 1.7 FREQUENCY (GHz) 2.3 2.5 46 42 38 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 2.1 Power Compression@ 1.9 GHz, Vs= 5V 46 Pout (dBm) Gain (dB) PAE (%) 34 30 26 22 18 14 10 6 2 -12 1.9 FREQUENCY (GHz) Power Compression@ 1.9 GHz, Vs= 3.6V 42 38 Pout (dBm) Gain (dB) PAE (%) 34 30 26 22 18 14 10 6 -10 -8 -6 -4 -2 0 2 4 6 8 2 -12 -10 -8 10 INPUT POWER (dBm) 38 40 34 36 30 32 IP3 (dBm) 44 +25 C +85 C -40 C 22 20 16 1.9 2.1 FREQUENCY (GHz) 0 2 4 6 8 10 12 14 +25 C +85 C -40 C 24 14 1.7 -2 28 18 1.5 -4 Output IP3 vs. Temperature, Vs= 5V 42 26 -6 INPUT POWER (dBm) Output IP3 vs. Temperature, Vs= 3.6V 10 1.3 11 - 52 Psat vs. Temperature, Vs= 5V 32 0 1.3 IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 Psat (dBm) Psat vs. Temperature, Vs= 3.6V 2.3 2.5 12 1.3 1.5 1.7 1.9 2.1 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2.5 HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Power Down Isolation, Vs= 3.6V 0 0 -10 -10 -20 ISOLATION (dB) ISOLATION (dB) Reverse Isolation vs. Temperature, Vs= 3.6V +25 C +85 C -40 C -30 -40 -20 -30 11 -40 -50 -60 -70 1.3 1.5 1.7 1.9 2.1 2.3 -60 1.3 2.5 1.5 1.7 FREQUENCY (GHz) 8 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 10 6 4 +25 C +85 C -40 C 1.7 1.9 4 +25 C +85 C -40 C 2 2.1 2.3 0 1.5 2.5 1.7 29 32 2.5 26 26 25 24 24 22 23 20 22 P1dB Psat 21 18 16 14 20 4.75 Vcc SUPPLY VOLTAGE (Vdc) 5.25 330 270 Icq 25 22 210 19 150 Gain P1dB Psat 16 90 30 13 1.5 Icq (mA) 27 28 P1dB, Psat (dBm) GAIN (dB) 30 Gain 4.25 2.3 28 GAIN (dB), P1dB (dBm), Psat (dBm) 34 3.75 2.1 Gain, Power & Quiescent Supply Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V 30 3.25 1.9 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 1.9 GHz 2.75 2.5 6 FREQUENCY (GHz) 28 2.3 Noise Figure vs. Temperature, Vs= 5V 10 0 1.5 2.1 FREQUENCY (GHz) Noise Figure vs. Temperature, Vs= 3.6V 2 1.9 LINEAR & POWER AMPLIFIERS - SMT -50 1.75 2 2.25 2.5 2.75 3 3.25 3.5 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 53 HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Absolute Maximum Ratings LINEAR & POWER AMPLIFIERS - SMT 11 Collector Bias Voltage (Vcc) +5.5 Vdc Control Voltage (Vpd1, Vpd2) +4.0 Vdc RF Input Power (RFIN)(Vs = +5Vdc, Vpd = +3.6 Vdc) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 24 mW/°C above 85 °C) 1.56 W Thermal Resistance (junction to ground paddle) 42 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC413QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC413QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] HMC413 XXXX [2] HMC413 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 11 - 54 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Pin Descriptions Function Description 1, 2, 4, 5, 7, 8, 9, 10, 13, 15 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3, 14 Vpd1, Vpd2 Power Control Pin. For maximum power, this pin should be connected to 3.6V. For 5V operation, a dropping resistor is required. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz. 11, 12 RFOUT RF output and bias for the output stage. 16 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 LINEAR & POWER AMPLIFIERS - SMT Pin Number 11 - 55 HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Evaluation PCB LINEAR & POWER AMPLIFIERS - SMT 11 * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. List of Materials for Evaluation PCB 105000 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 2.2 pF Capacitor, 0603 Pkg. C2 10 pF Capacitor, 0402 Pkg. C3 - C4 330 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor, Tantalum L1 16 nH Inductor 0603 Pkg. U1 HMC413QS16G / HMC413QS16GE Amplifier PCB [2] 105018 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 11 - 56 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz Application Circuit TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.1” 0.15” 0.1” * For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 57