HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm Power Down Capability LINEAR & POWER AMPLIFIERS - SMT 11 No External Matching Required Functional Diagram General Description The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Gain 10 Gain Variation Over Temperature Input Return Loss Min. 21 15 18 0.025 0.035 Saturated Output Power (Psat) 25 12 32 Noise Figure 37 Max. Units GHz 15 18 dB 0.025 0.035 dB/ °C 12 dB 15 dB 22 25 dBm 29 dBm 36 40 dBm 29 Output Third Order Intercept (IP3) Typ. 5.6 - 6.0 15 Output Power for 1 dB Compression (P1dB) 11 - 28 Max. 12 Output Return Loss 5.5 5.5 dB 0.002 / 230 0.002 / 230 mA Vpd = 5V 7 7 mA tON, tOFF 30 30 ns Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd) Switching Speed Typ. 5-7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 16 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 12 +25 C +85 C -40 C 8 -10 -15 11 4 0 -25 2 3 4 5 6 7 8 9 4 10 4.5 5 Input Return Loss vs. Temperature 6 6.5 7 7.5 8 Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 5.5 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -10 -15 -20 -20 -25 4 4.5 5 5.5 6 6.5 7 7.5 8 4 4.5 5 FREQUENCY (GHz) 6 6.5 7 7.5 8 7 7.5 8 Psat vs. Temperature 34 34 30 30 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 26 22 +25 C +85 C -40 C 18 5.5 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT -20 26 +25 C +85 C -40 C 22 18 14 14 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) 7 7.5 8 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 29 HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Output IP3 vs. Temperature 44 25 39 20 34 IP3 (dBm) 30 15 10 +25 C +85 C -40 C 24 Pout (dBm) Gain (dB) PAE (%) 5 19 0 14 0 4 8 12 16 20 4 4.5 5 INPUT POWER (dBm) 6 6.5 7 7.5 8 Gain & Power vs. Supply Voltage 10 18 30 8 16 28 14 26 12 24 10 22 6 GAIN (dB) NOISE FIGURE (dB) Noise Figure vs. Temperature 4 +25C +85C -40C 2 0 20 8 5 5.5 6 6.5 7 4.75 FREQUENCY (GHz) 5 5.25 Vcc SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature Power Down Isolation 0 0 -10 -10 ISOLATION (dB) ISOLATION (dB) 5.5 FREQUENCY (GHz) +25 C +85 C -40 C -20 -30 -20 -30 -40 -50 -40 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) 11 - 30 29 7 7.5 8 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 P1dB, Psat (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 5.8 GHz HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 200 25 15 150 Icq 100 10 50 5 0 2.5 3 3.5 4 4.5 Icq (mA) 20 P1dB Psat Gain Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 31 mW/°C above 85 °C) 2W Thermal Resistance (junction to ground paddle) 32 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 5 Vpd (Vdc) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 11 LINEAR & POWER AMPLIFIERS - SMT 250 30 GAIN (dB), P1dB (dBm), Psat (dBm) Absolute Maximum Ratings 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC407MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC407MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H407 XXXX [2] H407 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 31 HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Pin Descriptions Pin Number Function Description 1 Vcc1 Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required as shown in the application schematic. 2 Vpd Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower die current, this voltage can be reduced. 3, 6, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 5 RFOUT This pin is AC coupled and matched to 50 Ohms. 8 Vcc2 Power supply voltage for the output amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed no more than 20 mils form package lead. Interface Schematic LINEAR & POWER AMPLIFIERS - SMT 11 Application Circuit Note 1: Vcc1 and Vcc2 may be connected to a common Vcc. Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2). 11 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Evaluation PCB List of Materials for Evaluation PCB 104987 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 2.2 μF Capacitor, Tantalum U1 HMC407MS8G / HMC407MS8GE Amplifier PCB [2] 104628 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 33