MS15C37 N & P-Channel 30-V (D-S) MOSFET Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications • DC/DC Conversion • Power Routing • Motor Drives Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Nch Limit Pch Limit Unit VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V a 1.5 1.0 A a 1.25 0.86 A 10 -10 A ID Continuous Drain Current (TA =25°C) Continuous Drain Current (TA =70°C) IDM IS PD TJ/TSTG Pulsed Drain Current b Continuous Source Current (Diode Conduction) a 0.36 -0.35 A a 0.3 0.3 W a 0.21 0.21 W Power Dissipation (TA =25°C) Power Dissipation (TA =70°C) Operating Junction and Storage Temperature -55 to 150 Thermal Resistance Ratings Symbol Parameter RTHJA °C Maximum a 415 a 460 Maximum Junction-to-Ambient C/W (t <= 10 sec) Maximum Junction-to-Ambient C/W (Steady-State) Units °C/W Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Static Symbol Parameter VGS(th) Gate-Source Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current RDS(on) Test Conditions VDS = VGS , ID = -250 μA (Nch) 1 VDS = VGS , ID = -250 μA (Pch) -1 Typ. A gfs Forward Tranconductance VSD Diode Forward Voltage A A Max. ±10 VDS = 24 V , VGS = 0 V (Nch) 1 VDS = -24 V , VGS = 0 V (Pch) -1 VDS = 5 V , VGS = 10 V (Nch) 1.8 VDS = -5 V , VGS = -10 V (Pch) 1.2 Units V VDS = 0 V , VGS = ±20 V (Pch) Drain-Source On-Resistance Publication Order Number: [MS15C37] Min nA uA A VGS = 10 V , ID = 1.1 A (Nch) 90 VGS = 4.5 V , ID = 0.88 A (Pch) 130 VGS = -10 V , ID = -0.8 A (Nch) 190 VGS = -4.5 V , ID = -0.64 A (Pch) 290 VDS = 15 V , ID = 1.1 A (Nch) 4 VDS = -15 V , ID = -0.8 A (Pch) 3 IS = 0.18 V , VGS = 0 V (Nch) 0.74 IS = 0.175 V, VGS = 0 V (Pch) -0.79 mΩ S V © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET Dynamic Symbol b Parameter Test Conditions Min Typ. Max. Units Qg Total Gate Charge N-Channel -- 0.9 -- nC Qgs Gate-Source Charge VDS = 15 V , ID = 1.2 A , -- 0.32 -- nC Qgd Gate-Drain Charge VGS = 4.5 V -- 0.30 -- nC td(on) Turn-On Delay Time N-Channel -- 2 -- ns tr Rise Time VDS = 15 V , RL = 12.5 Ω , -- 7 -- ns td(off) Turn-Off Delay Time VGEN = 10 V , RGEN = 6 Ω , -- 13 -- ns tf Fall Time ID = 2 A -- 4 -- ns Ciss Input Capacitance N-Channel -- 118 -- pF Coss Output Capacitance VDS = 15 V , VGS = 0 V , -- 20 -- pF Crss Reverse Transfer Capacitance f = 1 Mhz -- 16 -- pF Qg Total Gate Charge P-Channel -- 2.3 -- nC Qgs Gate-Source Charge VDS = -15 V , ID = -0.8 A , -- 0.64 -- nC Qgd Gate-Drain Charge VGS = -4.5 V -- 0.75 -- nC td(on) Turn-On Delay Time P-Channel -- 5 -- ns tr Rise Time VDS = -15 V , RL = 18.7 Ω , -- 7 -- ns td(off) Turn-Off Delay Time VGEN = 10 V , RGEN = 6 Ω , -- 13 -- ns tf Fall Time ID = -0.8 A -- 5 -- ns Ciss Input Capacitance -- 132 -- pF Coss Output Capacitance -- 23 -- pF Crss Reverse Transfer Capacitance -- 18 -- pF P-Channel VDS = -15 V , VGS = 0 V , f = 1 Mhz Notes: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. c. Repetitive rating, pulse width limited by junction temperature. Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics - N-channel FIG.1-ON-RESISTANCE VS. DRAIN FIG.2-TRANSFER CHARACTERISTICS CURRENT FIG.3- ON-RESISTANCE VS. GATE-TO-SOURCE FIG.4-DRAIN-TO SOURCE FORWARD WOLTAGE VOLTAGE FIG.5-OUTPUT CHARACTERISTICS Publication Order Number: [MS15C37] FIG.6-CAPACITANCE © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics - N-channel FIG.7-GATE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TEMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics - P-channel FIG.1-ON-RESISTANCE VS. DRAIN FIG.2-TRANSFER CHARACTERISTICS CURRENT FIG.3- ON-RESISTANCE VS. GATE-TO-SOURCE FIG.4-DRAIN-TO SOURCE FORWARD WOLTAGE VOLTAGE FIG.5-OUTPUT CHARACTERISTICS Publication Order Number: [MS15C37] FIG.6-CAPACITANCE © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics - P-channel FIG.7-GATE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TEMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014