MS75N075

MS75N75
75V N-Channel MOSFET
Features
• RDS(on) (Max 0.017 Ω )@VGS=10V
• Gate Charge (Typical 85nC)
• Improved dv/dt Capability, High Ruggedness
• 100% Avalanche Tested
• Maximum Junction Temperature Range (175°C)
• RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
Drain-Source Voltage
75
V
Drain Current -Continuous (TC=25°C)
75
A
Drain Current -Continuous (TC=100°C)
52.5
A
IDM
Drain Current –Pulsed
300
A
VGS
Gate-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy
1350
mJ
EAR
Repetitive Avalanche Energy
9
mJ
dv/dt
Peak Diode Recovery dv/dt
7.0
V/ns
190
W
PD
Power Dissipation (TC=25°C)
1.27
W/°C
TJ/TSTG
Operating and Storage Temperature Range
-55 to +150
°C
300
°C
VDSS
ID
TL
- Derate above 25°C
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
●Drain current limited by maximum junction temperature
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Junction-to-Case
--
1.43
RθJA
Junction-to-Ambient
--
62.5
Units
°C/W
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS
Gate Threshold Voltage
VDS = VGS,ID = 250μA
2.0
--
4.0
V
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V,ID = 3.75 A
--
0.014
0.017
Ω
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
IDSS
IGSSF
IGSSR
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID = 250μA
75
--
--
V
ID = 250μA, Referenced to 25°C
--
0.08
--
V/°C
--
--
10
μA
VGS = 20 V , VDS = 0 V
--
--
100
μA
VGS = -20 V , VDS = 0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
3000
--
pF
--
1100
--
pF
--
250
--
pF
Min
Typ.
Max.
Units
--
25
60
ns
Zero Gate Voltage Drain
VDS = 75 V , VGS = 0 V
Current
VDS = 60 V , VC = 125°C
Gate-Body Leakage
Current,Forward
Gate-Body Leakage
Current,Reverse
Dynamic Characteristics
Symbol
Parameter
Test Conditions
CISS
Input Capacitance
COSS
Coss Output Capacitance
CRSS
Crss Reverse Transfer Capacitance
Switching Characteristics
Symbol
Parameter
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Test Conditions
100
td(on)
Turn-On Time
tr
Turn-On Rise Time
VDS = 37.5 V, ID = 75 A,
--
300
700
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω
--
150
310
ns
tf
Turn-Off Fall Time
--
180
370
ns
Qg
Total Gate Charge
--
85
110
nC
--
15
--
nC
--
40
--
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Publication Order Number: [MS75N75]
VDS = 60 V,ID = 10 A,
VGS = 75 V
© Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source-Drain Diode Forward Current
--
--
75
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
300
VSD
Source-Drain Diode Forward Voltage
IS = 75 A , VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
IS = 75 A , VGS = 0 V
--
90
--
ns
Qrr
Reverse Recovery Charge
diF/dt=100A/μs
--
250
--
μC
A
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014