MS75N75 75V N-Channel MOSFET Features • RDS(on) (Max 0.017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit Drain-Source Voltage 75 V Drain Current -Continuous (TC=25°C) 75 A Drain Current -Continuous (TC=100°C) 52.5 A IDM Drain Current –Pulsed 300 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 1350 mJ EAR Repetitive Avalanche Energy 9 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns 190 W PD Power Dissipation (TC=25°C) 1.27 W/°C TJ/TSTG Operating and Storage Temperature Range -55 to +150 °C 300 °C VDSS ID TL - Derate above 25°C Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limited by maximum junction temperature Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 1.43 RθJA Junction-to-Ambient -- 62.5 Units °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS,ID = 250μA 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V,ID = 3.75 A -- 0.014 0.017 Ω Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Test Conditions Min Typ. Max. Units VGS = 0 V , ID = 250μA 75 -- -- V ID = 250μA, Referenced to 25°C -- 0.08 -- V/°C -- -- 10 μA VGS = 20 V , VDS = 0 V -- -- 100 μA VGS = -20 V , VDS = 0 V -- -- -100 nA Min Typ. Max. Units -- 3000 -- pF -- 1100 -- pF -- 250 -- pF Min Typ. Max. Units -- 25 60 ns Zero Gate Voltage Drain VDS = 75 V , VGS = 0 V Current VDS = 60 V , VC = 125°C Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse Dynamic Characteristics Symbol Parameter Test Conditions CISS Input Capacitance COSS Coss Output Capacitance CRSS Crss Reverse Transfer Capacitance Switching Characteristics Symbol Parameter VDS = 25 V, VGS = 0 V, f = 1.0MHz Test Conditions 100 td(on) Turn-On Time tr Turn-On Rise Time VDS = 37.5 V, ID = 75 A, -- 300 700 ns td(off) Turn-Off Delay Time RG = 25 Ω -- 150 310 ns tf Turn-Off Fall Time -- 180 370 ns Qg Total Gate Charge -- 85 110 nC -- 15 -- nC -- 40 -- nC Qgs Gate-Source Charge Qgd Gate-Drain Charge Publication Order Number: [MS75N75] VDS = 60 V,ID = 10 A, VGS = 75 V © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source-Drain Diode Forward Current -- -- 75 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 300 VSD Source-Drain Diode Forward Voltage IS = 75 A , VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 75 A , VGS = 0 V -- 90 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 250 -- μC A Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014