STK7508P Semiconductor Advanced Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • High Voltage: BVDSS=80V(Min.) • Low Crss : Crss=220pF(Typ.) • Low gate charge : Qg=80nC(Typ.) • Low RDS(on) :RDS(on)=17mΩ(Max.) Ordering Information Type NO. Marking STK7508P Package Code STK7508 TO-220AB-3L Outline Dimensions unit : mm Φ3.70 Max. 3.00 Typ. 9.05~9.35 12.80~13.00 1.37 Max. 1.62 Max. 0.90 Max. 2.54 Typ. 2.60 Max. KSD-T0P006-000 4.35~4.65 2.54 Typ. 0.60 Max. 12.68~13.48 15.35~16.05 9.80~10.20 PIN Connections 1. Gate 2. Drain 3. Source 1 STK7508P Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 80 V Gate-Source voltage VGSS ±20 V Continuous Drain current (Tc=25℃) ID 75 A Continuous Drain current (Tc=100℃) ID 54.3 A Drain Current-Pulsed IDM 300 A PD 220 W ① Power Dissipation (Tc=25℃) Single Pulsed Avalanche Energy ② EAS 1310 mJ Avalanche current ① IAR 75 A Repetitive Avalanche Energy Junction temperature Storage temperature range ① EAR TJ Tstg 17.3 175 -55~175 mJ °C Thermal Resistance Characteristic Symbol Typ. Max Junction to Case Rth(J-C) - 0.68 Junction to Ambient Rth(J-a) - 62.5 KSD-T0P006-000 Units ℃/W 2 STK7508P Electrical Characteristics (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-Source breakdown voltage BVDSS ID=250μA, VGS=0 80 - - V Gate-Threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=80V, VGS=0V - - 10 μA Gate-source leakage IGSS VDS=0V, VGS=±20V - - ±100 nA Drain-Source on-resistance ③ RDS(ON) VGS=10V, ID=37.5A - 14 17 mΩ Forward transfer admittance ③ gfs VDS=20V, ID=37.5A - 15 - S - 2540 3210 - 950 1200 - 220 275 - 40 80 - 230 460 - 170 340 - 190 330 - 80 105 - 16 - - 30 - Min Typ Max Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain(“Miller”)charge VGS=0V, VDS=25V, f=1MHz VDD=40V, ID=75A RG=25Ω ③④ VDS=60V, VGS=10V, ID=75A ③④ Qgd Source-Drain Diode Ratings and Characteristics Characteristic Symbol Continuous source current IS pF ns nC (Tc=25°C) Test Condition - - 75 - - 300 Units Pulsed-source current ① ISM Integral reverse diode in the MOSFET Diode forward voltage ④ VSD VGS=0V, IS=75A - - 1.5 V Reverse recovery time trr - 90 - ns Reverse recovery charge Qrr Is=75A diF/dt=100A/us - 250 - uC ③ A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=0.32mH IAS=75A, VDD=25V, RG=25Ω , starting TJ=25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0P006-000 3 STK7508P Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID Fig. 5 Capacitance - VDS Fig.6 VGS - QG KSD-T0P006-000 4 STK7508P Fig.8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0P006-000 5 STK7508P Fig. 10 Gate Charge Test Circuit & Waveform Fig. 11 Resistive Switching Test Circuit & Waveform Fig. 12 EAS Test Circuit & Waveform KSD-T0P006-000 6 STK7508P Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0P006-000 7 STK7508P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P006-000 8