400V
27A
APT4016BVFR
0.16Ω
Ω
APT4016SVFR
APT4016BVFRG* APT4016SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V ®
BVFR
FREDFET
TO
-2
47
V®
Power MOS
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3Pak
D3PAK
SVFR
D
G
• Fast Recovery Body Diode
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT4016B_SVFR(G)
UNIT
400
Volts
Drain-Source Voltage
27
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
280
Watts
Linear Derating Factor
2.24
W/°C
VGSM
PD
TJ,TSTG
108
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
27
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
Volts
27
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 14A)
TYP
MAX
0.16
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
2-2006
BVDSS
Characteristic / Test Conditions
050-5634 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT4016B_SVFR(G)
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
3350
Coss
Output Capacitance
VDS = 25V
510
Crss
Reverse Transfer Capacitance
f = 1 MHz
200
VGS = 10V
135
VDD = 200V
ID = 27A @ 25°C
24
60
Turn-on Delay Time
VGS = 15V
11
Rise Time
VDD = 200V
10
ID = 27A @ 25°C
48
RG = 1.6Ω
6
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
Continuous Source Current (Body Diode)
IS
1
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
Peak Diode Recovery dv/dt
dt
27
(Body Diode)
ISM
2
MAX
108
(VGS = 0V, IS = -27A)
5
UNIT
Amps
1.3
Volts
15
V/ns
t rr
Reverse Recovery Time
(IS = -27A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
450
Q rr
Reverse Recovery Charge
(IS = -27A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
6.0
IRRM
Peak Recovery Current
(IS = -27A, di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
24
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.45
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
40
D=0.5
0.2
0.1
0.05
Note:
0.02
0.01
0.005
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5634 Rev A
2-2006
0.5
0.05
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 3.32mH, R = 25Ω, Peak I = 27A
j
G
L
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
[
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT4016B_SVFR(G)
50
50
40
VGS=15V
5.5V
30
5V
20
4.5V
10
ID, DRAIN CURRENT (AMPERES)
VGS=10V
40
VGS=7V
5V
20
4.5V
10
4V
0
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
20
10
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
24
18
12
6
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.8
1.6
1.4
VGS=10V
VGS=20V
1.2
1.0
0.8
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.0
1.1
1.0
0.9
10-2005
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
40
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
40
80
120
160
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
5.5V
30
4V
0
50
6V
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5634 Rev A
ID, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 10V & 15V
APT4016B_SVFR(G)
10,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
50
100µS
5,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
150
100
1mS
10
5
10mS
100mS
DC
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
D
VDS=80V
VDS=200V
12
VDS=320V
8
4
0
Coss
500
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
1,000
100
1
5 10
50 100
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
50
TJ =+25°C
10
5
1
.5
.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
D PAK (SVFR) Package Outline
e1 SAC: Tin, Silver, Copper
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
TO-247 (BVFR) Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
050-5634 Rev A
10-2005
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.