MSU4N60

MSU4N60
600V N-Channel MOSFET
Description
The MSU4N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Halogen free package available
• RoHS compliant package
Packing & Order Information
80/Tube ; 4,000/Box
Graphic symbol
Symbol
Dimensions in
Millimeters
Inches
min
max
min
max
A
2.15
2.45
0.85
0.96
A1
1.00
1.40
0.39
0.55
B
1.25
1.75
0.49
0.69
b
0.45
0.75
0.18
0.3
b1
0.65
0.95
0.26
0.37
C
0.38
0.64
0.15
0.25
C1
0.38
0.64
0.15
0.25
D
6.30
6.70
2.48
2.64
D1
5.10
5.50
2.01
2.17
E
5.30
5.70
2.09
2.24
e
Publication Order Number: [MSU4N60]
Dimensions in
2.3 (typ.)
0.91 (typ.)
e1
4.4
4.8
1.73
1.89
L
7.4
8.0
2.91
3.15
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
4.5
A
Drain Current -Continuous (TC=100°C)
2.6
A
IDM
Drain Current Pulsed
18
A
EAS
Single Pulsed Avalanche Energy
33
mJ
EAR
Repetitive Avalanche Energy
10
mJ
IAR
Avalanche Current
4.0
A
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Power Dissipation (TC = 25 °C)
31
W
0.25
W/°C
-55 to +150
°C
150
°C
ID
PD
- Derate above 25°C
TSTG
Operating and Storage Temperature
TJ
Storage Temperature
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Resistance Characteristics
Symbol
Parameter
Max.
RθJc
Thermal Resistance, Junction-to-Case
2.8
RθJA
Thermal Resistance, Junction-to-Ambient
50
Units
°C/W
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS(th)
VDS = VGS , ID = 250μA
2.0
--
4.0
V
RDS(ON)
VGS = 10 V , ID = 2.25 A
--
2.0
25
Ω
BVDSS
VGS = 0 V , ID=250μA
600
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
--
0.60
--
V/°C
--
--
1
μA
--
--
IDSS
IGSS
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
VGS = ±30
Publication Order Number: [MSU4N60]
10
±100
nA
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
td(on)
Min
Typ.
Max.
Units
--
10
30
ns
tr
VDD = 300 V, ID = 4.5 A,
--
40
80
ns
td(off)
VGS = 10 V, RG = 25 Ω
--
40
100
ns
--
50
90
ns
--
16
--
nC
--
2.5
--
nC
--
6.5
--
nC
--
560
--
pF
--
55
--
pF
--
7
--
pF
Min
Typ.
Max.
Units
IS
--
--
4.0
ISM
--
--
16
tf
Qg
Qgs
VDS = 480 V,ID = 4.5 A,
VGS = 10 V
Qgd
CISS
COSS
VDS = 25 V, VGS = 0 V,
F = 1.0MHz
CRSS
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
A
VSD
IS = 4 A , VGS = 0 V
--
--
1.4
V
trr
IS = 4 A , VGS = 0 V
--
270
--
ns
Qrr
diF/dt = 100A/μs
--
18
--
uC
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM
FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014
MSU4N60
600V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSU4N60]
© Bruckewell Technology Corporation Rev. A -2014