MSU2N60S

MSU2N60S
600V N-Channel MOSFET
Description
The MSU2N60S is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-251
package is universally preferred for all
commercial-industrial applications
Features
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unrivalled Gate Charge : 9.5nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
Dimensions in
Dimensions in
Millimeters
Inches
• 100% EAS Test
• RoHS compliant package
Symbol
min
max
min
max
Packing & Order Information
A
2.15
2.45
0.85
0.96
80/Tube ; 4,000/Box
A1
1.00
1.40
0.39
0.55
B
1.25
1.75
0.49
0.69
b
0.45
0.75
0.18
0.3
b1
0.65
0.95
0.26
0.37
C
0.38
0.64
0.15
0.25
C1
0.38
0.64
0.15
0.25
D
6.30
6.70
2.48
2.64
D1
5.10
5.50
2.01
2.17
E
5.30
5.70
2.09
2.24
e
2.3 (typ.)
0.91 (typ.)
e1
4.4
4.8
1.73
1.89
L
7.4
8.0
2.91
3.15
Graphic symbol
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
2
A
Drain Current -Continuous (TC=100°C)
1.1
A
IDM
Drain Current Pulsed
7.6
A
EAS
Single Pulsed Avalanche Energy
60
mJ
EAR
Repetitive Avalanche Energy
4.4
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
Power Dissipation (TC = 25 °C)
44
W
0.35
W/°C
-55 to +150
°C
300
°C
ID
PD
TJ,TSTG
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
2.87
RθJA
Junction-to-Ambient
83.3
°C/W
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
2.0
--
4.0
V
--
4.0
4.7
Ω
VGS
Gate Threshold Voltage
VDS = VGS , ID = 250μA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V , ID = 1 A
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
IDSS
IGSSF
IGSSR
Units
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID=250μA
600
--
--
V
--
0.6
--
V/°C
--
--
1
μA
VGS = 30 V , VDS = 0 V
--
--
100
nA
VGS = -30 V , VDS = 0 V
--
--
-100
nA
ID = 250μA, Referenced to 25°C
Zero Gate Voltage Drain
VDS = 600 V , VGS = 0 V
Current
VDS = 480 V , TC = 125°C
Gate-Body Leakage
Current, Forward
Gate-Body Leakage
Current, Reverse
Publication Order Number: [MSU2N60S]
10
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
Dynamic Characteristics
Symbol
Parameter
CISS
Test Conditions
Input Capacitance
VDS = 25 V, VGS = 0 V,
Min
Typ.
Max.
Units
--
180
235
pF
--
20
25
pF
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
--
4.3
5.6
pF
td(on)
Turn-On Time
--
25
60
ns
tr
Turn-On Time
VDS = 300 V, ID = 2 A,
--
24
58
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω
--
28
66
ns
tf
Turn-Off Fall Time
--
28
70
ns
Qg
Total Gate Charge
--
9.5
13
nC
--
1.6
--
nC
--
4
--
nC
Min
Typ.
Max.
Units
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
F = 1.0MHz
VDS = 480 V,ID = 2 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source-Drain Diode Forward Current
--
--
1.9
ISM
Pulsed Source-Drain Diode Forward Current
--
--
7.9
VSD
Source-Drain Diode Forward Voltage
IS = 2 A , VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
IS = 2 A , VGS = 0 V
--
230
--
ns
Qrr
Reverse Recovery Charge
diF/dt = 100A/μs
--
1.0
--
μC
A
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=1.6A, VDD=50V, RG=25W, Starting TJ=25℃
3. ISD≦1.6A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM
FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014
MSU2N60S
600V N-Channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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generic applications.
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application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSU2N60S]
© Bruckewell Technology Corporation Rev. A -2014