MSF7N80

MSF7N80
800V N-Channel MOSFET
Description
The MSF7N80 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 37nC (Typ.)
• Extended Safe Operating Area
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
7.0
A
Drain Current -Continuous (TC=100°C)
4.2
A
IDM
Drain Current Pulsed
28
A
EAS
Single Pulsed Avalanche Energy
580
mJ
EAR
Repetitive Avalanche Energy
16.7
mJ
ID
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
dv/dt
PD
TJ,TSTG
TL
Value
Unit
Peak Diode Recovery dv/dt
5.5
V/ns
Total Power Dissipation (TC = 25 °C)
56
W
0.42
W/°C
-55 to +150
°C
300
°C
Derating Factor above 25 °C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Thermal characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
2.25
RθJA
Junction-to-Ambient
62.5
Units
°C/W
On Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS
VDS = VGS, ID = 250μA
2.5
--
4.5
V
*RDS(ON)
VGS = 10 V , ID = 3.5 A
--
1.4
1.9
Ω
Min
Typ.
Max.
Units
800
--
--
V
--
0.6
--
V/°C
--
--
10
μA
Off Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID = 250μA
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
IDSS
VDS = 800 V , VGS = 0 V
VDS = 640 V , VC= 125°C
100
IGSSF
VGS = 30 V , VDS = 0 V
--
--
100
nA
IGSSR
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Min
Typ.
Max.
Units
--
35
--
nC
--
11
--
nC
Qgd
--
15
--
nC
td(on)
--
40
--
ns
Switching Characteristics
Symbol
Test Conditions
Qg
Qgs
VDG = 640 V,ID = 10 A,
VGS = 7 V
tr
VDS = 400 V, ID = 7 A,
--
120
--
ns
td(off)
RG = 25 Ω
--
60
--
ns
--
70
--
ns
tf
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
1500
2010
pF
--
145
190
pF
--
13
20
pF
Min
Typ.
Max.
Units
IS
--
--
7
ISM
--
--
28
--
--
1.4
V
--
650
--
ns
--
8
--
μC
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Source-Drain Diode Characteristics
Symbol
Test Conditions
VSD
trr
Qrr
A
IS = 7 A , VGS = 0 V
IF = 7 A ,VGS = 0 V , dIF/dt=100A/μs
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 18.0mH, IAS =7.0A, VDD = 5V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 7.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N80
800V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
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for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
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non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF7N80]
© Bruckewell Technology Corporation Rev. A -2014