WFP13N50C Product Description Silicon N-Channel MOSFET Features D � 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G S General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 500 V Continuous Drain Current(@Tc=25℃) 13 A Continuous Drain Current(@Tc=100℃) 8 A 52 A ±30 V (Note2) 845 mJ (note 1) 13 A ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy (Note1) 5 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns Total Power Dissipation(@Tc=25℃) 190 W Derating Factor above 25℃ 1.56 W/℃ -55~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.66 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W WT-017-Rev.A0 Apr.2013 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WFP13N50C Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain cut -off current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=500V,V GS=0V - - 1 µA 10 µA IDSS VDS=400V,TC=125℃ Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 500 - - V ID=250µA,Referenced to 25℃ - 0.6 - V/℃ Breakdown voltage Temperature △BVDSS/△TJ Coefficient Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=6.5A - 0.37 0.49 Ω Forward Transconductance gfs VDS=40V,ID=6.5A - 15 - S Input capacitance Ciss VDS=25V, - 1560 2090 Reverse transfer capacitance Crss VGS=0V, - 25 30 Output capacitance Coss f=1MHz - 210 260 VDD=250V, - 160 270 td(on) ID=13A - 90 180 tf RG=25Ω - 60 140 - 150 260 - 37 50 - 10.9 - - 17.2 - Turn-On rise time tr Turn-On delay time Switching time pF ns Turn-Off Fall time Turn-Off delay time (Note4,5) td(off) Total gate charge(gate-source VDD=400V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=13A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 13 A Pulse drain reverse current IDRP - - - 52 A Forward voltage(diode) VDSF IDR=13A,VGS=0V - - 1.5 V Reverse recovery time trr IDR=13A,VGS=0V, - 410 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 4.5 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9.0mH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤13A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 WFP13N50C Product Description Silicon N-Channel MOSFET Vgs 1 5 .0 V 1 0 .0 V 9 .0 V 8 .0 V 7 .0 V 6 .5 V Buttom: 5 . 5 V 101 10 Note: 1.250us pulse test 。 2.Tc=25 C 。 25 C I D Drain Current[A] I D Drain Current[A] To p : 。 150 C 1 0 .1 100 100 Note: 1.250us pulse test 2.VD S =40V 2 101 4 6 8 10 VD S Drain-Source Voltage[V] VG S Gate-Source Voltage[V] Fig.1 On Region Characteristics Fig.2 Transfer Characteristics 10 VG S =10V 0 .4 I DR Reverse D rain Cu rre nt[A] R D S (o n) Drain-S ourc e O n R es is tanc e[Ω ] 0 .6 VG S =20V 0 .2 0 5 10 20 15 1 150 。 C 25 。C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ID Drain Current[A] VS D Source-Drain Voltage[V] Fig.3 On-Resistance Variation vs Drain Current and Gate Voltage Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 3000 Ciss=Cgs+Cgd(Cds=shorted) VD S =100V Cos s =Cds +Cgd Crs s =Cgd 10 2500 VD S =250V VD S =400V C o ss 1500 Note: 1.V G S =0V 2.f=1M Hz 1000 C rs s V GS Gate Source Voltage[V] Capacitance[pF] C iss 2000 8 6 4 2 500 0 0 1 0 -1 100 101 0 10 20 Qg Toltal Gate Charge[nC] 30 40 VD S Drain-Source Voltae[V] Fig.6 Gate Charge Characteristics Fig.5 Capacitance Characteristics WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 WFP13N50C Product Description Silicon N-Channel MOSFET 1 .2 3 .0 1 .1 R D S(on) (Normalized) BV DS (Normalized) 2 .5 1 .0 2 .0 1 .5 1 .0 0 .9 Notes: 1.V G S =10V 2.I D =6.5A 0 .5 0 .8 -7 5 -5 0 -2 5 25 0 50 75 100 125 0 .0 -7 5 150 。 Tj[ C ] -5 0 Operation in This Area is limited by R DS(on) I D D ra in C u rre nt[A ] I D DrainCurrent[A] 10 1 1m s 0 DC 100m s Notes: 1 . T c= 25 。 C 。 2.TJ=150 C Single pulse -1 125 150 0 10 1 10 8 6 4 0 25 -2 10 100 12 10m s 10 75 14 2 100us 10 50 Fig.8On-Resistance Variation vs. Temperature 10us 10 25 0 。 Tj[ C ] Fig.7 Breakdown Voltage Variation vs. Temperature 10 -2 5 10 2 10 3 50 75 125 150 Fig.10 Maximum Drain Current vs Case temperature Fig.9 Maximum Safe Operation Area ZθJC (t),Thermal Response 100 Tc Case Temperature[。 C ] VD S Drain-Source Voltage[V] D =0 .5 1 0 .2 * N o te : 0 .1 。 1.Zθ J C (t)=2.5 C/W Max. 2.Duty Factor,D=t1/t2 3.T JM-T C=P DM* Z θJ C (t) 0 .0 5 0 .1 0 .0 2 0 .0 1 PD M Single pulse t1 0.01 t2 1 E -5 1 E-4 1 E-3 0.01 0 .1 1 10 t1 ,Square Wave Pulse Duration [sec] Fig.11 Transient thermal Response Curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 WFP13N50C Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 WFP13N50C Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG S am e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S Gate Pulse Width Gate Pulse Period D = (Driver) 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 WFP13N50C Product Description Silicon N-Channel MOSFET TO-220C Package Dimension U n It:m m E A 7 Q F D2 D P L L2 B 符 号 M IN MAX A 4 .3 0 4 .7 0 B 1 .1 0 1 .4 0 b 0 .7 0 0 .9 5 c 0 .4 0 0 .6 5 d 1 5 .2 1 6 .2 D2 9 .0 0 9 .4 0 E 9 .7 0 1 0 .1 0 e 2 .3 9 2 .6 9 F 1 .2 5 1 .4 0 L 1 2 .6 0 1 3 .6 0 L2 2 .8 0 3 .2 0 Q 2 .6 0 3 .0 0 Q1 2 .2 0 2 .6 0 P 3 .5 0 3 .8 0 b c Q1 e WIN SEM I e M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 7/8 WFP13N50C Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/8