SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS(on) 5.2 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N03S2L-05 Package P- TO220 -3-1 Ordering Code Q67042-S4033 Marking SPB80N03S2L-05 P- TO263 -3-2 Q67042-S4032 2N03L05 SPI80N03S2L-05 P- TO262 -3-1 Q67042-S4093 2N03L05 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) Value Unit A ID 80 TC=25°C 80 ID puls 320 EAS 325 Repetitive avalanche energy, limited by Tjmax 2) EAR 16 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 167 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80 A , V DD=25V, RGS=25Ω kV/µs IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 0.6 0.9 - - 62 - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=110µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 10 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=4.5V, I D=55A - 5.6 7.5 V GS=4.5V, I D=55A, SMD version - 5.2 7.2 V GS=10V, I D=55A - 4 5.2 V GS=10V, I D=55A, SMD version - 3.7 4.9 Drain-source on-state resistance4) RDS(on) 1Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 139A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 55 110 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =80A Input capacitance Ciss VGS =0V, VDS =25V, - 2500 3320 pF Output capacitance Coss f=1MHz - 975 1300 Reverse transfer capacitance Crss - 215 325 Gate resistance RG - 1.75 - Ω Turn-on delay time td(on) VDD =15V, VGS =10V, - 10 15 ns Rise time tr ID =20A, - 18 27 Turn-off delay time td(off) RG =2.7Ω - 44 66 Fall time tf - 20 30 - 7.9 10.5 - 23.3 35 - 67.5 89.7 V(plateau) VDD =24V, ID =40A - 3.2 - V IS - - 80 A - - 320 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =40A VDD =24V, ID =40A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=80A - 0.95 1.26 V Reverse recovery time trr V R=15V, I F=lS, - 46.5 58.1 ns Reverse recovery charge Qrr diF/dt=100A/µs - 55.5 69.4 nC Page 3 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V 180 90 W A 140 70 120 60 ID P tot SPP80N03S2L-05 100 50 80 40 60 30 40 20 20 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 SPP80N03S2L-05 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP80N03S2L-05 10 1 SPP80N03S2L-05 K/W A t = 12.0µs p 0 DS (on ) 2 R ID 10 Z thJC = V DS /I D 10 100 µs 10 -1 10 -2 D = 0.50 1 ms 10 0.20 1 0.10 0.05 10 0.02 -3 0.01 single pulse 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-04-24 0 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP80N03S2L-05 190 SPP80N03S2L-05 16 Ptot = 167W i hg f e ID 160 a 2.5 b 3.0 140 c 3.5 d 4.0 120 d e 4.5 f 5.0 g 5.5 100 80 c mΩ VGS [V] h 6.0 i 10.0 R DS(on) A d 12 10 8 e 6 60 f c g h i 4 40 0 2 VGS [V] = b 20 c 3.5 a 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 5 0 d 4.0 e f 4.5 5.0 20 40 g 5.5 60 h i 6.0 10.0 80 100 A VDS 140 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 250 140 A S 200 100 ID g fs 175 150 80 125 60 100 75 40 50 20 25 0 0 1 2 3 4 V 6 VGS Page 5 0 0 25 50 75 100 125 150 175 200 A 250 ID 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 55 A, VGS = 10 V parameter: VGS = VDS SPP80N03S2L-05 3 14 mΩ V 12 V GS(th) R DS(on) 11 10 9 2 0,855mA 8 1.5 7 98% 6 5 1 typ 4 110µA 3 0.5 2 1 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPP80N03S2L-05 A pF C oss 10 10 2 10 1 IF C Ciss 3 T j = 25 °C typ C rss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω parameter: ID = 40 A pulsed SPP80N03S2L-05 350 16 V mJ VGS E AS 12 250 10 0,2 VDS max 200 0,8 VDS max 8 150 6 100 4 50 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 nC 110 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP80N03S2L-05 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-04-24 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N03S2L-05, BSPB80N03S2L-05 and BSPI80N03S2L-05, for simplicity the device is referred to by the term SPP80N03S2L-05, SPB80N03S2L-05 and SPI80N03S2L-05 throughout this documentation Page 8 2003-04-24