IPD06N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS(on) 5.9 mΩ •Low On-Resistance RDS(on) ID 50 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converter Type Package Ordering Code Marking IPD06N03L P- TO252 -3-11 Q67042-S4109 06N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC Value Unit A 50 =25°C1) 50 ID puls 200 EAS 250 Repetitive avalanche energy, limited by T jmax2) EAR 15 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W Pulsed drain current TC=25°C Avalanche energy, single pulse 1) mJ ID=20A, V DD=25V, RGS=25Ω kV/µs IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +175 °C 55/175/56 Page 1 2003-01-17 IPD06N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.7 1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0V, I D=1mA Gate threshold voltage, V GS = VDS ID = 80 µA Zero gate voltage drain current µA IDSS VDS=30V, V GS=0V, T j=25°C - 0.01 1 VDS=30V, V GS=0V, T j=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 6.8 8.7 mΩ RDS(on) - 4.7 5.9 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.5V, ID=30A Drain-source on-state resistance VGS=10V, ID=30A 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 113A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD06N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 29 58 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A Input capacitance Ciss VGS=0V, VDS =25V, - 1900 2530 Output capacitance Coss f=1MHz - 740 990 Reverse transfer capacitance Crss - 180 270 Turn-on delay time td(on) VDD=15V, VGS=10V, - 7.3 11 Rise time tr ID=25A, - 19 29 - 34 50 - 20.5 30.7 - 6.3 8.4 - 12.3 16.4 - 25.8 34.3 - 35.5 31.9 Turn-off delay time td(off) Fall time tf RG =3.6Ω ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=15V, ID=25A VDD=15V, ID=25A, nC VGS=0 to 5V Output charge Qoss VDS=15V, ID =25A, nC VGS=0V Gate plateau voltage V(plateau) VDD=15V, ID=25A - 3.1 - V IS TC=25°C - - 50 A - - 200 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed I SM Inverse diode forward voltage VSD VGS =0V, IF =50A - 0.9 1.2 V Reverse recovery time t rr VR =15V, IF =lS , - 41 51 ns Reverse recovery charge Q rr diF /dt=100A/µs - 46 58 nC Page 3 2003-01-17 IPD06N03L 1 Power dissipation 2 Drain current Ptot = f (TC) I D = f (TC) parameter: VGS≥ 10 V 160 IPD06N03L 55 IPD06N03L A W 45 40 ID Ptot 120 100 35 30 80 25 60 20 15 40 10 20 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance I D = f ( VDS ) Z thJC = f (tp) parameter : D = 0 , T C = 25 °C parameter : D = tp/T 10 3 10 1 IPD06N03L IPD06N03L K/W A 10 0 DS /I D tp = 7.6µs DS (on ) R ID 10 2 Z thJC = V 10 µs 10 -1 100 µs D = 0.50 10 10 -2 0.20 1 ms 1 0.10 0.05 10 ms DC 10 -3 0.02 single pulse 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp VDS Page 4 2003-01-17 10 0 IPD06N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance I D = f (VDS); Tj=25°C parameter: t p = 80 µs RDS(on) = f (ID) 120 parameter: VGS IPD06N03L 19 Ptot = 150W IPD06N03L Ω A VGS [V] a 2.6 h b 2.8 c 3.0 d 3.2 e 3.4 f 3.6 g 3.8 f h 4.5 90 ID 80 g 70 60 i 50 e f g 16 RDS(on) i 100 d 14 12 10 10.0 8 h e 40 6 30 i d 4 20 c 2 b 10 a 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGS [V] = d 3.2 e f 3.4 3.6 10 20 g 3.8 30 h i 4.5 10.0 40 50 60 70 A 85 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D= f ( VGS ); V DS≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C parameter: t p = 80 µs parameter: gfs 90 60 A S 50 70 40 g fs ID 45 35 60 50 30 40 25 30 20 15 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 4 V VGS Page 5 0 0 20 40 60 80 100 A 130 ID 2003-01-17 IPD06N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 30 A, V GS = 10 V parameter: VGS = VDS IPD06N03L 14 2.5 12 V Ω 1mA VGS(th) RDS(on) 11 10 9 1.5 8 7 98% 6 85µA 1 typ 5 4 3 0.5 2 1 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 Tj 180 °C Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 IPD06N03L A pF Ciss C IF 10 2 Coss 10 3 10 1 Tj = 25 °C typ Tj = 175 °C typ Crss Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V VSD VDS Page 6 2003-01-17 3 IPD06N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (T j) V(BR)DSS = f (Tj) par.: I D = 20 A, V DD = 25 V, R GS = 25 Ω parameter: I D=10 mA 260 36 IPD06N03L mJ V 220 V(BR)DSS E AS 200 180 160 34 33 140 32 120 31 100 30 80 60 29 40 28 20 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 25 A pulsed 16 IPD06N03L V V GS 12 10 8 0.2 VDS max 0.5 VDS max 6 0.8 VDS max 4 2 0 0 10 20 30 40 50 60 nC 75 Q Gate Page 7 2003-01-17 200 IPD06N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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