BB 112 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8.0 V BB 112 Type Marking Ordering Code Pin Configuration Package1) BB 112 – Q62702-B240 TO-92 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 12 V Forward current, TA ≤ 60 ˚C IF 50 mA Operating temperature range Top – 55 … + 85 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 112 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 50 200 440 17.5 470 – 520 34 nA Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C IR Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V CT Capacitance ratio VR = 1 V, 8 V CT1 CT8 15 – – – Series resistance VR = 1 V, f = 0.5 MHz rs – 1.4 – Ω Q factor VR = 1 V, f = 0.5 MHz Q – 480 – – Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz TCC – 500 – ppm/K Capacitance matching VR = 1 … 8 V ∆CT – – 3 % Semiconductor Group pF CT 2 BB 112 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3