BB 439 Silicon Variable Capacitance Diode BB 439 Preliminary Data ● For VHF tuned circuit applications ● High figure of merit Type Marking Ordering Code (tape and reel) BB 439 white 2 Q62702-B577 Pin Configuration Package1) SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 28 V Peak reverse voltage VRM 30 Forward current IF 20 Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient 1) 450 K/W For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 439 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 200 26 4.3 – – 32 6 Reverse current VR = 28 V VR = 28 V, TA = 60 ˚C IR nA Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V CT Capacitance ratio, f = 1 MHz VR = 3 V, 25 V CT3 / CT25 5 – 6.5 – Capacitance matching VR = 3 V … 25 V, f = 1 MHz ∆CT – – 3 % Series resistance f= 100 MHz, CT = 12 pF rs – 0.35 0.5 Ω Figure of merit f = 50 MHz, VR = 3 V f = 200 MHz, VR = 25 V Q pF / CT – – – Diode capacitance CT = f (VR) f= 1 MHz Semiconductor Group 2 280 600 – –