BB 419 Silicon Variable Capacitance Diode ● BB 419 For VHF tuned circuit applications Type Marking Ordering Code (tape and reel) BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 28 V Peak reverse voltage VRM 30 Forward current, TA ≤ 60 ˚C IF 20 Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient 1) 450 K/W For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 419 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 200 26 4.3 – – 32 6 Reverse current VR = 28 V VR = 28 V, TA = 60 ˚C IR nA Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V CT Capacitance ratio f = 1 MHz, VR = 3 V, 25 V CT3 / CT25 5 – 6.5 – Capacitance matching VR = 3 V … 25 V ∆CT – – 3 % Series resistance f= 100 MHz, CT = 12 pF rs – 0.35 0.5 Ω Figure of merit f = 50 MHz, VR = 3 V f= 200 MHz, VR = 25 V Q pF / CT – – Diode capacitance CT = f (VR) Semiconductor Group 2 280 600 –