INFINEON IPP50R140CP

IPP50R140CP
CoolMOSTM Power Transistor
Product Summary
Features
• Worldwide best R DS ,on in TO220
• Lowest figure of merit RON x Qg
V DS @Tjmax
550
V
R DS(on),max
0.140
Ω
48
nC
Q g,typ
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
PG-TO220
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebookadapter & PDP and LCD TV
• PWM Stages for Server, Adapter
Type
Package
Marking
IPP50R140CP
PG-TO220
5R140P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
23
T C=100 °C
15
Pulsed drain current2)
I D,pulse
T C=25 °C
56
Avalanche energy, single pulse
E AS
I D=9.3 A, V DD=50 V
616
Avalanche energy, repetitive t AR2),3)
E AR
I D=9.3 A, V DD=50 V
0.93
Avalanche current, repetitive t AR2),3)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 2.0
Unit
A
mJ
9.3
A
V DS=0...400 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
192
W
-55 ... 150
°C
M3 and M3.5 screws
page 1
60
Ncm
2007-11-06
IPP50R140CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current
IS
Diode pulse current 2)
I S,pulse
Reverse diode dv /dt 4)
dv /dt
Parameter
Symbol Conditions
Value
Unit
14
T C=25 °C
A
56
15
V/ns
Values
Unit
min.
typ.
max.
-
-
0.65
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.93 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
-
-
2
V DS=500 V, V GS=0 V,
T j=150 °C
-
20
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=14 A,
T j=25 °C
-
0.13
0.14
Ω
V GS=10 V, I D=14 A,
T j=150 °C
-
0.32
-
f =1 MHz, open drain
-
2.2
-
Gate resistance
Rev. 2.0
RG
page 2
Ω
2007-11-06
IPP50R140CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2540
-
-
110
-
-
110
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
-
230
-
Turn-on delay time
t d(on)
-
35
-
Rise time
tr
-
14
-
Turn-off delay time
t d(off)
-
80
-
Fall time
tf
-
8
-
Gate to source charge
Q gs
-
11
-
Gate to drain charge
Q gd
-
15
-
Gate charge total
Qg
-
48
64
Gate plateau voltage
V plateau
-
5.2
-
V
-
0.9
1.2
V
-
400
-
ns
-
5.6
-
µC
-
26
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 400 V
V DD=400 V,
V GS=10 V, I D=14 A,
R G=12.2 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=14 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=14 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
I SD≤I D, di /dt ≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-06
IPP50R140CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
200
102
limited by on-state
resistance
180
10 µs
1 µs
160
100 µs
140
10
1
1 ms
I D [A]
P tot [W]
120
100
DC
10 ms
80
100
60
40
20
10-1
0
0
25
50
75
100
125
150
100
175
101
102
103
V DS [V]
T C [°C]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z(thJC)=f(tp);
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
100
75
20 V
10 V
60
8V
0.5
0.2
I D [A]
Z thJC [K/W]
7V
45
10-1
0.1
6V
30
0.05
5.5 V
0.02
15
0.01
5V
single pulse
4.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
t p [s]
Rev. 2.0
0
5
10
15
20
V DS [V]
page 4
2007-11-06
IPP50R140CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
0.8
50
7V
20 V
10 V
40
8V
7V
6.5 V
0.6
6V
R DS(on) [Ω]
I D [A]
30
5.5 V
20
0.5
6V
5.5 V
0.4
5V
10
10 V
0.7
4.5 V
0.3
0.2
0
0
5
10
15
20
0
25
10
20
30
V DS [V]
40
50
60
I D [A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=14 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
0.35
100
0.3
80
25 °C
60
I D [A]
R DS(on) [Ω]
0.25
0.2
40
98 %
150 °C
typ
0.15
20
0.1
0.05
0
-60
-20
20
60
100
140
180
Rev. 2.0
0
2
4
6
8
10
V GS [V]
T j [°C]
page 5
2007-11-06
IPP50R140CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=14 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
120 V
150 °C, 98%
8
25 °C
150 °C
400 V
101
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
10
20
30
40
0
50
0.5
1
Q gate [nC]
1.5
12 Drain-source breakdown voltage
E AS=f(T j); I D=9.3 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
700
580
600
560
500
540
V BR(DSS) [V]
E AS [mJ]
11 Avalanche energy
400
300
520
500
200
480
100
460
0
440
25
75
125
175
T j [°C]
Rev. 2.0
2
V SD [V]
-60
-20
20
60
100
140
180
T j [°C]
page 6
2007-11-06
IPP50R140CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
12
100000
105
10
10000
104
Ciss
8
3
E oss [µJ]
C [pF]
1000
10
Coss
6
100
102
4
101
10
2
Crss
0
1010
0
50
100
150
200
V DS [V]
Rev. 2.0
0
100
200
300
400
500
V DS [V]
page 7
2007-11-06
IPP50R140CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2007-11-06
IPP50R140CP
PG-TO220-3-1/PG-TO220-3-21: Outlines
Rev. 2.0
page 9
2007-11-06
IPP50R140CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2007-11-06