INFINEON BTS5246-2L

Data Sheet, Rev.1.4, Sep 2008
BTS5246-2L
Smart High-Side Power Switch
Automotive Power
Smart High-Side Power Switch
BTS5246-2L
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Assignment BTS5246-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
4.1
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
5.1
5.1.1
5.1.2
5.1.3
5.1.4
5.2
Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
10
10
11
13
14
6
6.1
6.2
6.3
6.4
6.5
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
16
16
17
17
7
7.1
7.2
7.3
Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
19
20
21
8
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Data Sheet
2
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
PROFET
1
BTS5246-2L
Overview
Basic Features
•
•
•
•
•
•
•
•
•
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behavior at under voltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Very low leakage current from OUT to GND
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-12-9
Product Summary
The BTS5246-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS technology.
Operating voltage
Vbb(on)
4.5 .. 28 V
Over voltage protection
Vbb(AZ)
41 V
On-State resistance
RDS(ON)
19 mΩ
Nominal load current (one channel active)
6A
Current limitation repetitive
IL(nom)
IL(LIM)
IL(SCr)
Standby current for whole device with load
Ibb(OFF)
7.5 µA
Adjustable current limitation
7 A / 40 A
7 A / 40 A
Type
Package
Marking
BTS5246-2L
PG-DSO-12-9
BTS5246-2L
Data Sheet
3
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Overview
Protective Functions
•
•
•
•
•
•
•
•
•
Reverse battery protection with external resistor
Short circuit protection
Overload protection
Multi-step current limitation
Adjustable current limitation
Thermal shutdown with restart
Over voltage protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
•
•
•
•
•
•
IntelliSense functionality for each channel
Proportional load current sense signal by current source
Open load detection in ON-state by load current sense
Open load detection in OFF-state by voltage source
Feedback on over temperature and current limitation in ON-state
Suppressed thermal toggling of fault signal
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
All types of resistive, inductive and capacitive loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Diagram
2
Block Diagram
The BTS5246-2L is a dual channel high-side power switch (Two Channels, 19 mΩ) in PG-DSO-12-9 power
package providing embedded protective functions. Integrated resistors at each input pin (IN1, IN2, CLA) reduce
external components.
The load current limitation can be adjusted in two steps by the current limit adjust pin (CLA).
The IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense
function, open load in off state and short circuit protection.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground
referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology.
channel 1
VBB
load current
sense
internal
power
supply
logic
IN1
IS1
ESD
protection
CLA
gate control
&
charge pump
open load
detection
temperature
sensor
clamp for
inductive load
multi step
load current
limitation
OUT1
channel 2
control and protection circuit
equivalent to
channel 1
IN2
IS2
OUT2
GND
Figure 1
Data Sheet
Block Diagram
5
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Diagram
2.1
Terms
Following figure shows all terms used in this data sheet.
Vbb
Ibb
IIN1
IIN2
VIN1
VIN2
IIS1
IIS2
VIS1
VIS2
ICLA
IN1
VBB
IN2
IS1
OUT1
CLA
V DS1
VOUT1
BTS5246-2L
OUT2
IS2
I L1
I L2
V DS2
V OUT2
GND
VCLA
IGND
Terms2ch.emf
Figure 2
Data Sheet
Terms
6
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment BTS5246-2L
(top view)
GND
1
12
VBB
IN1
2
11
OUT1
IS1
3
10
OUT1
IS2
4
9
OUT2
IN2
5
8
OUT2
VBB
6
7
CLA
heat slug (VBB)
Figure 3
Pin Configuration PG-DSO-12-9
3.2
Pin Definitions and Functions
Pin
Symbol
I/O
OD
Function
2
IN1
I
Input signal for channel 1
5
IN2
I
Input signal for channel 2
3
IS1
O
Diagnosis output signal channel 1
4
IS2
O
Diagnosis output signal channel 2
7
CLA
I
Current limit adjust input for channel 1&2
OUT1
1)
O
Protected high-side power output channel 1
8, 9
OUT2
1)
O
Protected high-side power output channel 2
1
GND
-
Ground connection
6,12,
heat slug
VBB
-
Positive power supply for logic supply as well as output power
supply
10,11
1) All output pins of each channel have to be shorted.
Data Sheet
7
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Electrical Characteristics
4
Electrical Characteristics
4.1
Maximum Ratings
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
max.
–
18
28
Unit Test Conditions
Power Supply
4.1.1
4.1.2
4.1.3
Vbb
Supply voltage
IGND
Supply voltage for full short circuit protection (single Vbb(SC)
Current through ground pin
V
t ≤ 100 h
mA t ≤ 2 min
-150
0
20
V
–
52
V
pulse)
(Tj = -40°C .. 150°C)
4.1.4
Voltage at power transistor
4.1.5
Supply Voltage for Load Dump protection
VDS
Vbb(LD)
–
L = 8 µH
R = 0.2 Ω 1)
V
RI = 2 Ω 2)
RL = 2.25 Ω
RL = 6.8 Ω
A
3)
mJ
4)
40
53
Power Stages
4.1.6
Load current
4.1.7
Maximum energy dissipation single pulse
IL
EAS
IL(LIM)
–
130
Tj(0) = 150°C
IL(0) = 6 A
VBB = 12 V
4.1.8
Ptot
Power dissipation (DC)
–
1.4
W
5)
Ta = 85 °C
Tj ≤ 150 °C
Logic Pins
4.1.9
Voltage at input pin
4.1.10 Current through input pin
4.1.11 Voltage at current limit adjust pin
4.1.12 Current through current limit adjust pin
4.1.13 Current through sense pin
VIN
-5
-16
19
IIN
-2.0
-8.0
2.0
VCLA
-5
-16
19
ICLA
-2.0
-8.0
2.0
IIS
-5
10
mA
Tj
∆T j
Tstg
-40
150
°C
–
60
°C
-55
150
°C
V
t ≤ 2 min
mA
t ≤ 2 min
V
t ≤ 2 min
mA
t ≤ 2 min
Temperatures
4.1.14 Junction temperature
4.1.15 Dynamic temperature increase while switching
4.1.16 Storage temperature
ESD Susceptibility
4.1.17 ESD susceptibility HBM
IN, CLA
IS
OUT
Data Sheet
kV
VESD
8
-1
-2
-4
1
2
4
according to
EIA/JESD 22-A
114B
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Electrical Characteristics
1) R and L describe the complete circuit impedance including line, contact and generator impedances
2) Load Dump is specified in ISO 7637, RI is the internal resistance of the Load Dump pulse generator
3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.
4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak. Please see Figure 8
5) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
9
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Description and Electrical Characteristics
5
Block Description and Electrical Characteristics
5.1
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump.
5.1.1
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4
shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described
in Section 6.2.
Tj = 25°C
35
140
30
120
RDS(ON) /mΩ
RDS(ON) /mΩ
Vbb = 13.5 V
25
20
80
60
40
15
10
-50 -25
100
20
0
25
50
75 100 125 150
0
T /°C
Figure 4
Typical On-State Resistance
5.1.2
Input Circuit
5
10
15
Vbb /V
20
25
Figure 5 shows the input circuit of the BTS5246-2L. There is an integrated input resistor that makes external
components obsolete. The current sink to ground ensures that the device switches off in case of open input pin.
The zener diode protects the input circuit against ESD pulses.
IN
RIN
IIN
GND
Input.emf
Figure 5
Input Circuit (IN1 and IN2)
A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in
terms of EMC emission.
Data Sheet
10
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Description and Electrical Characteristics
IN
VOUT
tON
t
tOFF
90%
70%
dV /
dtOFF
40%
30%
dV /dtON
10%
t
Figure 6
Switching a Load (resistive)
5.1.3
Inductive Output Clamp
SwitchOn.emf
When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current.
V bb
VBB
IL
GND
OUT V OUT
L,
RL
OutputClamp .emf
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative
output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum
allowed load inductance is limited.
V OUT
IN = 5V
IN = 0V
Vbb
t
V OUT(CL)
IL
tpeak
t
Figure 8
Data Sheet
InductiveLoad.emf
Switching an Inductance
11
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Description and Electrical Characteristics
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS5246-2L. This energy can be
calculated with following equation:
V OUT(CL) 
RL ⋅ IL 
L
- ⋅ ln  1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ----------------------  + I L ⋅ -----RL
R
V OUT(CL) 

L
Following equation simplifies under the assumption of RL = 0:
V bb 
2 
1
E = --- LI L ⋅  1 – ----------------------
2
V

OUT(CL) 
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the
maximum allowed energy dissipation.
VBB = 12V
EAS (mJ)
1000
100
10
2
3
4
6
8
10
IL (A)
Figure 9
Data Sheet
Maximum energy dissipation single pulse, Tj,Start = 150°C
12
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Description and Electrical Characteristics
5.1.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
min.
typ.
max.
4.5
–
28
–
–
1.6
3.2
4
8
General
Vbb
5.1.1 Operating voltage
IGND
5.1.2 Operating current
one channel
all channels
5.1.3 Standby current for whole device with
load
Ibb(OFF)
–
–
–
5
–
–
V
VIN = HIGH
RL = 12 Ω
VDS < 0.5 V
mA
VIN = 5 V
IL = 5A
µA
VIN = 0 V
VCLA = 0 V
VOUT < VOUT(OL)
Tj = 25°C
Tj = 105°C3)
Tj = 150°C
mΩ
IL = 5 A
Tj = 150 °C
mV
IL = 0.5 A
A
Ta = 85 °C
Tj ≤ 150 °C 1) 2)
A
Tc = 85 °C
VDS = 0.5 V 2)
7.5
7.5
20
Output characteristics
5.1.4 On-State resistance per channel
RDS(ON)
5.1.5 Output voltage drop limitation at small
load currents
VDS(NL)
5.1.6 Nominal load current per channel
IL(nom)
one channel active
two channels active
ISO load current per channel
IL(ISO)
one channel active
two channels active
5.1.7 Output clamp
VOUT(CL)
5.1.8 Output leakage current per channel
IL(OFF)
–
35
–
40
6
4.3
38
6.3
4.5
15
15
17
17
–
–
-24
-20
-17
V
IL = 40 mA
–
1.5
8
µA
VIN = 0 V
Input characteristics
5.1.9 Input resistance for pin IN
RIN
2.0
3.5
5.5
kΩ
5.1.10 L-input level for pin IN
VIN(L)
-0.3
–
1.0
V
5.1.11 H-input level for pin IN
VIN(H)
2.4
–
–
V
5.1.12 Hysteresis for pin IN
∆VIN
–
0.5
–
V
3)
5.1.13 L-input current for pin IN
IIN(L)
3
–
40
µA
VIN = 0.4 V
5.1.14 H-input current for pin IN
IIN(H)
20
50
90
µA
VIN = 5 V
5.1.15 Turn-on time to
90% Vbb
tON
–
90
250
µs
RL = 12 Ω
Vbb = 13.5 V
5.1.16 Turn-off time to
10% Vbb
tOFF
–
100
250
µs
RL = 12 Ω
Vbb = 13.5 V
Timings
Data Sheet
13
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Block Description and Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
typ.
max.
Unit Test Conditions
5.1.17 slew rate
10% to 30% Vbb
dV/ dtON
0.1
0.25
0.45
V/µs RL = 12 Ω
Vbb = 13.5 V
5.1.18 slew rate
70% to 40% Vbb
-dV/ dtOFF
0.1
0.25
0.45
V/µs RL = 12 Ω
Vbb = 13.5 V
1) Device mounted on PCB (50 mm x 50 mm x 1.5 mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
2) Not subject to production test, parameters are calculated from RDS(ON) and Rth
3) Not subject to production test, specified by design
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
5.2
Pos.
Thermal Resistance
Parameter
Symbol
Limit Values
Min.
5.2.1
5.2.2
1)
Junction to Case
1)
Junction to Ambient
one channel on
all channels on
Typ.
RthJC
RthJA
Unit
Max.
1.8
–
–
40
33
Conditions
K/W
–
K/W
2)
–
–
1) Not subject to production test, specified by design.
2) EIA/JESD 52_2, FR4, 80 × 80 × 1.5 mm; 35µ Cu, 5µ Sn; 300 mm2
Data Sheet
14
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Protection Functions
6
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are neither designed for continuous nor repetitive operation.
6.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are two
steps of current limitation. They can be selected by the CLA pin, but are additionally selected automatically
depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS.
Please refer to following figure for details.
IL
40
CLA = L
30
20
10
CLA = H
5
Figure 10
10
15
20
25
30 VDS
CurrentLimitation.emf
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside.
A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After
cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for complete
picture of the behavior, when Figure 12 sketches a zoom of the first event and the die temperature increase and
toggling.
IN
IL
IIS
IL(LIM)
t
IL(SCr)
t
VIS(fault)
t
Figure 11
OverLoad .emf
Shut Down by Over Temperature
The CLA pin circuit is similar to the input pin. Please refer to Figure 5 for details. Please note that the thresholds
for high and low state differ between IN and CLA.
Data Sheet
15
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Protection Functions
IN
t
IL
IL(LIM)
IL(SCr)
t
Tj(SC)
Tj
tOFF(SC)
∆T j (SC)
125°C
t
For better understanding, the drawing doesn't respect the scale
Thermal mechanism.emf
Figure 12
Initial short circuit shut down.
6.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Use following formula for estimation
of total power dissipation Pdiss(rev) in reverse polarity mode.
Pdiss(rev) =
∑
( V DS(rev) ⋅I L )
all channels
The reverse current through the power transistors has to be limited by the connected loads. The reverse current
through the ground connection has to be limited either by a resistor or by a pair of resistor and diode. The current
through sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The temperature
protection is not active during reverse polarity.
6.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 5.1.3, there is a clamp mechanism for
over voltage protection. The current through the ground connection has to be limited e.g. by a resistor.
As shown in Figure 13, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage
across logic part is clamped. As a result, the ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes,
the potential at pin IN1, IN2 and CLA rises almost to that potential, depending on the impedance of the connected
circuitry.
IN
ZDAZ
RIN
VBB
IS
CLA
RCLA
logic
ZDESD
OUT
GND
V OUT
RGND
OverVoltage .emf
Figure 13
Data Sheet
Over Voltage Protection
16
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Protection Functions
6.4
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground, the BTS5246-2L securely
changes to or stays in off state.
6.5
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
min. typ. max
.
Over Load Protection
6.5.1 Short circuit current limitation.
IL(LIM)
40
7
6.5.2 Repetitive short circuit current limitation
40
7
A
VDS > 5 V
CLA = 0 V
CLA = 5 V 1)
A
Tj = Tj(SC) 1) 2)
CLA = 0 V
CLA = 5 V
ms
TjStart = 25 °C 2)
CLA = 0 V
CLA = 5 V
See Figure 12
2)
60
14
IL(SCr)
–
–
6.5.3 Initial short circuit shut down time
50
11
–
–
tOFF(SC)
–
–
0.8
4
–
–
150
170
–
°C
–
K
6.5.4 Thermal shut down temperature
Tj(SC)
6.5.5 Thermal hysteresis
∆Tj
–
10
-VDS(rev)
–
–
900 mV
IL = -5 A
Tj =150 °C
Vbb(AZ)
41
47
52
V
Ibb = 40 mA
IL(GND)
–
–
2
mA
IIN = 0 2) 3)
IGND = 0
IIS = 0
2)
Reverse Battery
6.5.6 Drain-Source diode voltage (VOUT > Vbb)
Over Voltage
6.5.7 Over voltage protection
Loss of GND
6.5.8 Output current while GND disconnected
Current Limit Adjust (CLA)
6.5.9 Input resistance for pin CLA
RCLA
2.0
3.5
5.5
kΩ
6.5.10 L-input level for pin CLA
VCLA(L)
-0.3
–
2.0
V
6.5.11 H-input level for pin CLA
VCLA(H)
4.0
–
6.5.12 L-input current for pin CLA
ICLA(L)
3
–
40
µA
VCLA = 0.4 V
6.5.13 H-input current for pin CLA
ICLA(H)
20
50
90
µA
VCLA = 5 V
V
1) Must be limited to 2mn.
2) Not subject to production test, specified by design
3) no connection at these pins
Data Sheet
17
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Diagnosis
7
Diagnosis
For diagnosis purpose, the BTS5246-2L provides an IntelliSense signal at pins IS1 and IS2. This means in detail,
the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no
failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the diagnosis pin.
S OL
VBB
IIS1
IN1
Rlim
ROL
gate control
RIN1
IS1
OUT1
over temperature
over load
open load @ off
0
µC
1
V IS(fault)
VOUT(OL)
channel 1
IN2
Rlim
gate control
RIN2
IS2
diagnosis
IIS2
RIS1 RIS2
GND
OUT2
channel 2
load
Sense.emf
Figure 14
Block Diagram: Diagnosis
Table 1
Truth Table
Operation Mode
Input
Level
Normal Operation (OFF)
Output Level
L
Diagnostic
Output
Z
Z
Short Circuit to GND
Z
Z
Over Temperature
Z
Z
Short Circuit to Vbb
Vbb
VIS = VIS(fault)
< VOUT(OL)
> VOUT(OL)
Z
VIS = VIS(fault)
~Vbb
IIS = IL / kILIS
Current Limitation
< Vbb
VIS = VIS(fault)
Short Circuit to GND
Open Load
Normal Operation (ON)
H
~GND
VIS = VIS(fault)
Over Temperature
Z
VIS = VIS(fault)
Short Circuit to Vbb
Vbb
IIS < IL / kILIS
Open Load
~Vbb
Z
L = Low Level, H = High Level, Z = high impedance, potential depends on external circuit
Data Sheet
18
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Diagnosis
7.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio
(kILIS = IL / IIS) depends on the temperature. Please refer to Figure 15 for details. Usually a resistor RIS is connected
to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ
7500
7000
6500
kILIS
6000
5500
5000
4500
4000
0
Figure 15
1
2
3
IL /A
4
5
6
Current sense ratio kILIS1)
Details about timings between the diagnosis signal IIS and the output voltage VOUT and the load current IL in ONstate can be found in Figure 16.
normal operation
IN
V OUT
OFF
over load (current limitation)
ON
t
tON
t
IL
IIS
tsIS(ON)
tsIS(LC)
t
tsIS(LC)
VIS(fault) / RS
t
SwitchOn .emf
Figure 16
Timing of Diagnosis Signal in ON-state
In case of over-current as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the
according input pin is high. This means, even when the device keeps switching on and off in over-load condition,
the failure signal is constantly available. Please refer to Figure 17 for details.
1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in
Section 7.3 (Position 7.3.7).
Data Sheet
19
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Diagnosis
over load (current limitation & thermal toggling)
normal operation
Tj
Tj(SC)
t
IL
tsIS(LC)
IIS
thIS(OTR)
t
V IS(fault) / RS
t
OverTemp .emf
Figure 17
Timing of Diagnosis Signal in Over Load Condition
7.2
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and the load current IL in OFFstate can be found in Figure 18.
IN
ON
OFF
t
V OUT
pull-up resistor
inactive
Open Load, pull-up resistor active
IIS
td(fault)
ts(fault)
t
VIS(fault) / RS
t
SwitchOff.emf
Figure 18
Timing of Diagnosis Signal in OFF-state
For open load diagnosis in off-state an external output pull-up resistor (ROL) is recommended. For calculation of
pull-up resistor, the leakage currents and the open load threshold voltage VOUT(OL) has to be taken into account.
Depending on the application, an additional pull down resistor at the output might be necessary.
V bb(min) – V OUT(OL,max)
R OL = ---------------------------------------------------------I leakage
Ileakage defines the leakage current in the complete system including IL(OL) and external leakages e.g. due to
humidity. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off-state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. The stand-by
current of the BTS5246-2L is minimized, when both input pins (IN1 and IN2) are on low level or left open and
VOUT < VOUT(OL). In case of open load in off state (VOUT > VOUT(OL) and VIN = 0 V), the fault voltage VIS(fault) drives a
current through the sense resistor, which causes an increase in supply current. To reduce the stand-by current to
a minimum, the open load condition needs to be suppressed.
The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse
polarity and over voltage.
Data Sheet
20
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Diagnosis
7.3
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
Unit
Test Conditions
typ. max.
Open Load at OFF state
7.3.3 Sense signal in case of open load
VOUT(OL)
-IL(OL)
VIS(fault)
7.3.4 Sense signal current limitation
IIS(LIM)
4
–
–
mA
VIS = 0 V
VIN = 0 V
VOUT > VOUT(OL)
7.3.5 Sense signal invalid after negative input slope td(fault)
–
–
1.2
ms
VIN = 5 V to 0 V
VOUT > VOUT(OL)
IIS = 1mA
ts(fault)
–
–
200 µs
7.3.1 Open load detection threshold voltage
7.3.2 Leakage current into OUT
7.3.6 Fault signal settling time
2.0
3.2
4.4
V
–
–
1
µA
VOUT = 5 V
5.0
6.2
8
V
VIN = 0 V
VOUT > VOUT(OL)
IIS = 1 mA
VIN = 0 V 1)
VOUT = 0 V to
> VOUT(OL)
IIS = 1 mA
Load Current Sense
7.3.7 Current sense ratio
VIN = 5 V;
kILIS
IL = 0.5 A
IL = 3.0 A
IL = 6.0 A
Tj = 150°C;
Tj = -40°C
4450 5800 6960
4750 5400 6050
4900 5350 5800
7.3.8 Current sense voltage limitation
VIS(LIM)
5.4
6.5
7.5
V
IL = 5 A
IIS = 0
7.3.9 Current sense leakage/offset current
IIS(LH)
–
–
5
µA
VIN = 5 V
IL = 0 A
7.3.10 Current sense settling time to IIS static ±10%
after positive input slope
tsIS(ON)
–
–
400 µs
VIN = 0 V to 5 V
IL = 5 A 1)
7.3.11 Current sense settling time to IIS static ±10%
after change of load current
tsIS(LC)
–
–
300 µs
VIN = 5 V
IL = 3 A to 5 A 1)
7.3.12 Fault signal hold time after thermal restart
thIS(OTR)
–
–
1.2
1)
ms
See Figure 17
1) Not subject to production test, specified by design
Data Sheet
21
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Package Outlines
0.1
0.1 C 12x
Seating Plane
1
5x 1 = 5
0.4 +0.13
0.25
M
-0.035
8˚
C
0.7 ±0.15
(0.2)
(4.4)
CAB
10.3 ±0.3
0.25 B
4.2 ±0.1
7
1.6 ±0.1
(1.8)
5.1 ±0.1
12
7.5 ±0.1 1)
5˚ ±3˚
B
0.25 +0.075
2.6 MAX.
(1.55)
2)
0.8
8˚
0 +0.1
6.4 ±0.1 1)
A
2.35 ±0.1
Package Outlines
0.1 ±0.05 3)
8
ø0.8 x 0.1 -0.05 Depth
4)
1
6
7.8 ±0.1
(Heatslug)
1)
Does not include
2)
Stand OFF
3)
Stand OUT
4)
plastic or metal protrusion of 0.15 max. per side
Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
Figure 19
PG-DSO-12-9 (Plastic Dual Small Outline Package
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
22
Dimensions in mm
Rev.1.4, 2008-09-01
Smart High-Side Power Switch
BTS5246-2L
Revision History
9
Revision History
Revision
Date
Changes
Rev 1.4
09-01-2008
Modification of the Figure 9
Rev.1.3
06-29-2007
all pages: added new Infineon logo
Creation of the green data sheet.
First page:
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
page 8: table max. ratings: 3.1.7 parameter changed from 319 mJ to 130 mJ
added test conditions Vbb = 12V
note 4: added see figure 8
page 12: changed figure 9
page 13: 5.1.2 added Testcondition IL = 5 A
5.1.7 parameter changed from -17 to -12V to -24 to -17V
page 20: add paragraph: Depending on the application, an additional pull down
resistor at the output might be necessary.
Data Sheet
23
Rev.1.4, 2008-09-01
Edition 2008-09-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 9/1/08 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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