Composite Transistors XN4505 NPN epitaxial planer transistor Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Tr1 Tr2 +0.1 +0.1 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Storage temperature 0.95 0.4±0.2 Absolute Maximum Ratings (Ta=25˚C) Overall Junction temperature 3 0.1 to 0.3 2SD601A+2SD1328 Parameter 0.95 +0.1 ■ 4 0 to 0.05 ● 2 0.16–0.06 ■ Basic Part Number of Element 5 0.8 +0.2 2.9 –0.05 +0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 1.9±0.1 ■ Features Tj 150 ˚C Tstg –55 to +150 ˚C 1.45±0.1 0.65±0.15 1 6 0.5 –0.05 1.5 –0.05 0.3 –0.05 0.65±0.15 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: DZ Internal Connection 6 Tr1 2 5 4 1 Tr2 3 1 Composite Transistors ■ Electrical Characteristics ● XN4505 (Ta=25˚C) Tr1 Parameter Symbol Collector to base voltage Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current ● 160 460 0.3 V Tr2 Parameter Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 V Collector cutoff current ICBO VCB = 25V, IE = 0 hFE1 VCE = 2V, IC = 0.5A*1 200 hFE2 VCE = 2V, IC = 1A*1 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 20mA Transition frequency fT VCB = 10V, IE = –50mA Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*2 Collector to base voltage Forward current transfer ratio *1 Pulse measurement *2 Ron test circuit µA 0.1 800 0.13 0.4 V 1.2 V 200 MHz 10 pF 1.0 Ω Common characteristics chart 1kΩ IB=1mA VV VB Ron= ✕1000(Ω) VA–VB VA PT — Ta f=1kHz V=0.3V 500 Total power dissipation PT (mW) VB 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) 2 Composite Transistors XN4505 Characteristics charts of Tr1 IC — VCE IB — VBE 240 Ta=25˚C VCE=10V VCE=10V Ta=25˚C IB=160µA 40 120µA 100µA 30 80µA 20 60µA 40µA Base current IB (µA) 140µA 200 Collector current IC (mA) 1000 50 Collector current IC (mA) IC — VBE 1200 60 800 600 400 200 10 160 25˚C 120 Ta=75˚C –25˚C 80 40 20µA 0 0 2 4 6 8 0 0 10 0.2 0.6 IC — IB Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 160 120 80 40 0 200 400 600 1.0 0 0.4 800 1000 3 1 0.3 25˚C 0.01 0.1 Ta=75˚C –25˚C 0.3 1 3 10 30 Collector current IC (mA) Base current IB (µA) 1.6 2.0 600 IC/IB=10 10 0.03 1.2 hFE — IC 30 0.1 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 100 240 0 0.8 Base to emitter voltage VBE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) 0.4 VCE=10V Forward current transfer ratio hFE 0 100 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) fT — IE 300 Transition frequency fT (MHz) VCB=10V Ta=25˚C 240 180 120 60 0 –0.1 –0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) 3 Composite Transistors XN4505 Characteristics charts of Tr2 IC — VCE VCE(sat) — IC 1.2 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.2 0.5mA 0 0 1 2 3 4 5 30 10 3 1 0.3 0.1 25˚C Ta=75˚C –25˚C 0.03 0.01 0.01 0.03 6 Collector to emitter voltage VCE (V) 0.1 0.3 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 800 Ta=75˚C 25˚C –25˚C 200 0.3 1 3 Collector current IC (A) 4 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 10 1 3 10 Cob — VCB VCB=10V Ta=25˚C 350 300 250 200 150 100 0 –1 0.3 Collector current IC (A) 24 50 0.1 3 fT — I E 1000 0 0.01 0.03 10 0.01 0.01 0.03 10 400 VCE=2V 400 3 IC/IB=10 30 Collector current IC (A) 1200 600 1 Collector output capacitance Cob (pF) Collector current IC (A) 1.0 IC/IB=25 Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 100 IB=4.0mA VBE(sat) — IC 100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –2 –3 –5 –10 –20 –30 –50 –100 Emitter current IE (mA) 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V)