Composite Transistors XN4482 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 Tr1 Tr2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Collector current IC –500 mA Peak collector current ICP –1 A Total power dissipation PT 300 mW Overall Junction temperature Storage temperature +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings Tj 150 ˚C Tstg –55 to +150 ˚C 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SB709+2SB710 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: ON Internal Connection 6 Tr1 2 5 4 1 Tr2 3 1 Composite Transistors XN4482 ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Collector to base voltage Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF Collector cutoff current ● 160 460 – 0.3 – 0.5 V Tr2 Parameter Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Collector cutoff current ICBO VCB = –20V, IE = 0 hFE1 VCE = –10V, IC = –150mA* 85 40 Collector to base voltage Forward current transfer ratio – 0.1 µA 340 hFE2 VCE = –10V, IC = –500mA* Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA* – 0.35 – 0.6 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA* –1.1 –1.5 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 5 V V MHz 15 pF * Pulse measurement Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) 2 Composite Transistors XN4482 Characteristics charts of Tr1 IC — VCE IC — I B –60 Ta=25˚C –40 –200µA –150µA –20 –100µA –10 Base current IB (µA) –250µA –30 –40 –30 –20 –250 –200 –150 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 0 Collector to emitter voltage VCE (V) –100 –200 –300 IC — VBE –25˚C –160 –120 –80 –40 –3 Ta=75˚C 25˚C –25˚C –0.3 –0.1 –0.03 –0.01 –0.003 0 –0.4 –0.8 –1.2 –1.6 –2.0 –0.001 –1 fT — IE –30 –1.6 –100 –300 –1000 VCE= –10V 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Cob — VCB 8 160 Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 120 100 80 60 40 20 0 0.1 –10 Collector current IC (mA) Base to emitter voltage VBE (V) 140 –3 –1.2 hFE — IC IC/IB=10 –1 –0.8 600 Forward current transfer ratio hFE 25˚C Collector to emitter saturation voltage VCE(sat) (V) VCE=–5V 0 –0.4 Base to emitter voltage VBE (V) VCE(sat) — IC –10 Ta=75˚C 0 –400 Base current IB (µA) –240 –200 –100 –50 0 Transition frequency fT (MHz) –300 –10 –50µA 0 VCE= – 5V Ta=25˚C –350 –50 Collector current IC (mA) Collector current IC (mA) VCE=–5V Ta=25˚C IB=–300µA –50 Collector current IC (mA) IB — VBE –400 –60 0.3 1 3 10 30 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 1 0 –1 –2 –3 –5 –10 –20–30 –50 –100 Collector to base voltage VCB (V) 3 Composite Transistors XN4482 Characteristics charts of Tr2 IC — VCE IC — I B Ta=25˚C –600 –500 –9mA –8mA –7mA –6mA –5mA –4mA –400 –3mA –300 –2mA –1mA –200 Collector current IC (mA) VCE=–10V Ta=25˚C –600 –500 –400 –300 –200 –100 –100 0 0 0 –4 –8 –12 –16 0 –20 –2 VBE(sat) — IC –3 25˚C Ta=–25˚C 75˚C –0.3 –0.1 –0.03 –10 –30 –100 –300 –1000 Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) 24 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V) 4 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –6 –8 –0.001 –1 –10 –3 –10 –30 fT — I E 240 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –100 –300 –1000 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 –3 –1 hFE — IC –30 –0.01 –1 –4 300 IC/IB=10 –1 –3 Base current IB (mA) Collector to emitter voltage VCE (V) –100 IC/IB=10 –0.003 VCB=–10V Ta=25˚C Transition frequency fT (MHz) Collector current IC (mA) –10 –700 –700 IB=–10mA VCE(sat) — IC –800 Collector to emitter saturation voltage VCE(sat) (V) –800 200 160 120 80 40 0 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 1 2 3 5 10 20 30 50 Emitter current IE (mA) 100