PD - 94100 HFB35HB20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF(AV) = 35A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 80°C Single Pulse Forward Current, R TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 35 150 125 -55 to +150 V A W °C Note: Q D.C. = 50% rect. wave R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) CATHODE ANODE TO-254AA www.irf.com 1 03/23/01 HFB35HB20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF Min. Typ. Max. Units — — — 1.25 V Test Conditions Cathode Anode Breakdown Voltage Forward Voltage 200 — IR = 100µA IF = 20A, TJ =-55°C See Fig. 1 — — 1.15 — — 1.41 — — 1.92 IF = 70A, TJ = 25°C — — 1.01 IF = 20A, TJ =125°C IF = 20A, TJ = 25°C V IF = 35A, TJ = 25°C See Fig. 2 IR Reverse Leakage Current See Fig. 2 — — — — 10 1.0 µA mA VR = VR Rated VR = VR Rated, TJ = 125°C CT Junction Capacitance, See Fig. 3 — — 175 pF VR = 200V LS Series Inductance — 7.8 — nH Measured from anode lead to cathode lead , 6mm ( 0.025 in) from package Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Min. Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — — Typ. Max. Units — 45 68 3.3 7.6 76 270 236 1020 35 — — — — — — — — Test Conditions ns ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 5 IF = 35A TJ = 25°C See Fig. A A TJ = 125°C 6 VR = 160V TJ = 25°C See Fig. nC TJ = 125°C 7 dif/dt = 200A/µs nC TJ = 25°C See Fig. A/µs 8 A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter RthJC Wt 2 Junction-to-Case Weight Typ. Max. Units — 9.3 1.0 — °C/W g www.irf.com HFB35HB20 100 100 Reverse Current - I R (µA) 75°C 1 0.1 25°C 0.01 0.001 0 40 80 120 160 200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 10000 Tj = 125°C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 125°C 100°C 10 Tj = 25°C Tj = -55°C 1000 T J = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 100 0 Forward Voltage Drop - V F (V) 40 80 120 160 200 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.001 0.00001 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFB35HB20 90 100 VR = 160V TJ = 125°C TJ = 25°C IF = 70A IF = 35A IRRM - ( A ) trr - ( ns ) 70 IF = 17.5A IF = 35A 50 IF = 17.5A 10 IF = 70A VR = 160V TJ = 125°C TJ = 25°C 1 30 100 100 1000 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt, 1000 Fig. 6 - Typical Recovery Current Vs. dif/dt, 10000 di ( rec )M / dt - ( A / µs ) Qrr - ( nC ) IF = 35A 100 IF = 70A IF = 35A IF = 17.5A VR = 160V IF = 17.5A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt 4 IF = 70A 100 1000 dif / dt - ( A / µs ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt www.irf.com HFB35HB20 3 t rr IF tb ta 0 R E V E R S E R E C O V E R Y C IR C U IT Q rr V R = 2 00 V 2 I RRM 4 0.5 I R R M di(rec)M /dt 0.01 Ω 0.75 I R R M L = 70µH 1. dif/dt - Rate of change of current through zero crossing D IR F P 2 50 G di f /dt 1 D .U .T. d if/d t A D JU S T 5 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 31.40 [1.235] 30.35 [1.195] 1 2 13.84 [.545] 13.59 [.535] 3 B 17.40 [.685] 16.89 [.665] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3.81 [.150] 2X 0.36 [.014] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUTLINE T O-254AA. B A PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GAT E IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01 www.irf.com 5