BSM 400 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance single switch • Including fast free- wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 400 GA 120 DL 1200V 680A Package Ordering Code SINGLE SWITCH C67076-A2302-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 680 TC = 80 °C 400 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 1360 TC = 125 °C 800 Ptot Power dissipation per IGBT TC = 25 °C W 2700 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.045 Diode thermal resistance, chip case RthJCD ≤ 0.09 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 sec 40 / 125 / 56 Feb-14-1997 BSM 400 GA 120 DL Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 16 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 400 A, Tj = 25 °C - 2.2 2.6 VGE = 15 V, IC = 400 A, Tj = 125 °C - 2.5 3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 15 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - - - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 400 AC Characteristics Transconductance gfs VCE = 20 V, IC = 400 A Input capacitance - nF - 26 - - 4 - - 2 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Feb-14-1997 BSM 400 GA 120 DL Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7 Ω Rise time - 300 - - 170 - - 900 - - 100 - tr VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7 Ω Free-Wheel Diode Diode forward voltage VF V IF = 400 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 400 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/µs, Tj = 125 °C Reverse recovery charge - 0.6 - Qrr µC IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/µs Tj = 25 °C - 16 - Tj = 125 °C - 45 - Semiconductor Group 3 Feb-14-1997 BSM 400 GA 120 DL Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 4 2800 W A 2400 Ptot tp = 21.0µs IC 2200 10 3 2000 1800 100 µs 1600 10 2 1400 1200 1 ms 1000 800 10 1 10 ms 600 400 200 0 0 DC 10 20 40 60 80 100 120 °C 0 160 10 0 10 1 10 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 700 K/W A 600 IC V VCE ZthJC 550 10 -1 500 450 10 -2 400 350 D = 0.50 300 10 -3 0.20 250 0.10 200 0.05 10 -4 150 0.02 single pulse 0.01 100 50 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Feb-14-1997 BSM 400 GA 120 DL Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 800 A IC 600 800 A 17V 15V 13V 11V 9V 7V IC 600 500 500 400 400 300 300 200 200 100 100 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Feb-14-1997 BSM 400 GA 120 DL Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 400 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 600 V 14 800 V 10 1 12 Coss 10 Crss 8 10 0 6 4 2 0 0 400 800 1200 1600 2000 nC 10 -1 0 2800 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH 2.5 12 ICpuls/IC ICsc/IC di/dt = 1000A/µs 3000A/µs 5000A/µs 8 1.5 6 1.0 4 ° allowed number of short circuit: <1000 ° time between short 2 circuit: >1s 0.5 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Feb-14-1997 BSM 400 GA 120 DL Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 2.2 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 400 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tr tdon tf 10 2 10 1 0 100 200 300 400 500 600 700 tf 10 2 A 10 1 0 900 5 10 15 20 IC Ω 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 2.2 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 400 A 250 250 Eon E mWs E 150 mWs 150 Eoff Eon Eoff 100 100 50 50 0 0 100 200 300 400 500 600 700 A 900 IC Semiconductor Group 7 0 0 5 10 15 20 Ω 30 RG Feb-14-1997 BSM 400 GA 120 DL Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 800 K/W A IF ZthJC 600 500 10 -1 10 -2 Tj=125°C Tj=25°C 400 D = 0.50 10 -3 0.20 300 0.10 0.05 200 10 0.02 -4 single pulse 0.01 100 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -5 -5 10 8 Feb-14-1997 BSM 400 GA 120 DL Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Feb-14-1997