BUP 300 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 300 1200V 3.6A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4203-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 3.6 TC = 90 °C 2.4 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 7.2 TC = 90 °C 4.8 EAS Avalanche energy, single pulse mJ IC = 1.5 A, VCC = 50 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C 3.5 Ptot Power dissipation TC = 25 °C W 40 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Jul-30-1996 BUP 300 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance ≤ 3.1 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 1.5 A, Tj = 25 °C - 2.8 3.3 VGE = 15 V, IC = 1.5 A, Tj = 125 °C - 3.8 4.3 VGE = 15 V, IC = 1.5 A, Tj = 150 °C - 4 4.5 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES µA VCE = 1000 V, VGE = 0 V, Tj = 25 °C - 1 25 VCE = 1000 V, VGE = 0 V, Tj = 125 °C - - 100 Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - 0.1 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 1.5 A Input capacitance - pF - 225 320 - 25 40 - 13 24 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance 0.6 Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-30-1996 BUP 300 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Ω Rise time - 30 50 - 20 30 - 170 250 - 15 25 tr VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω Total turn-off loss energy Eoff mWs VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100 Ω Semiconductor Group - 3 0.25 - Jul-30-1996 BUP 300 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 45 4.5 W A IC 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0 0 0.0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 1 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 1 t = 4.5µs p 10 µs A K/W IC ZthJC 100 µs 10 0 10 0 1 ms D = 0.50 0.20 10 ms 10 -1 10 -1 0.10 0.05 0.02 single pulse DC 10 -2 0 10 10 1 10 2 10 3 10 -2 -5 10 V VCE Semiconductor Group 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-30-1996 BUP 300 Typ. output characteristics Typ. transfer characteristics IC = f(VCE) IC = f (VGE) parameter: tp = 80 µs, Tj = 125 °C parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) VCE(sat) = f (VGE) parameter: Tj = 25 °C parameter: Tj = 125 °C Semiconductor Group 5 Jul-30-1996 BUP 300 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 1 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 20 V VGE 16 14 400 V 800 V 12 10 8 6 4 2 0 0 4 8 12 16 20 24 32 Q Gate Semiconductor Group 6 Jul-30-1996 BUP 300 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 7 Jul-30-1996