BSM 100 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 100 GD 120 DN2 1200V 150A IC Package Ordering Code ECONOPACK 3 C67070-A2517-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 150 TC = 80 °C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 300 TC = 80 °C 200 Power dissipation per IGBT W Ptot TC = 25 °C 680 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.182 Diode thermal resistance, chip case RthJCD ≤ 0.36 Insulation test voltage, t = 1min. Vis Creepage distance °C -40 ... + 125 K/W 2500 Vac - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Aug-27-2001 BSM 100 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 4 mA 4.5 5.5 6.5 VGE = 15 V, IC = 100 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 100 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 6 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Aug-27-2001 BSM 100 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Rise time - 160 320 - 80 160 - 400 520 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Free-Wheel Diode Diode forward voltage V VF IF = 100 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time µs trr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.3 µC Qrr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C - 4 - Tj = 125 °C - 11 - 3 Aug-27-2001 BSM 100 GD 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 700 W t = 15.0µs p A 600 Ptot IC 550 10 2 500 100 µs 450 400 10 1 350 1 ms 300 250 10 ms 200 10 0 150 DC 100 50 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 150 A K/W 130 IC V VCE 120 ZthJC 110 10 -1 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 30 0.02 single pulse 20 10 0 0 0.05 10 -3 40 20 40 60 80 100 120 °C 160 TC 10 -4 -5 10 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 4 Aug-27-2001 BSM 100 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 200 200 A IC 160 140 A 17V 15V 13V 11V 9V 7V IC 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Aug-27-2001 BSM 100 GD 120 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 100 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 14 600 V 800 V 10 1 Ciss 12 10 8 10 0 6 Coss 4 Crss 2 0 0 100 200 300 400 500 nC 10 -1 0 700 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Aug-27-2001 BSM 100 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 100 A 10 3 10 4 ns t tdoff ns t 10 3 tdon tdoff tr 10 2 tdon tr tf 10 2 tf 10 1 0 50 100 150 A 10 1 0 250 10 20 30 40 IC Ω 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 100 A 60 60 Eon mWs mWs E E 40 40 Eon 30 30 20 20 Eoff Eoff 10 0 0 10 50 100 150 A 250 IC 7 0 0 10 20 30 40 Ω 60 RG Aug-27-2001 BSM 100 GD 120 DN2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 200 A IF Diode K/W 160 ZthJC 10 -1 140 120 Tj=125°C Tj=25°C 100 10 -2 D = 0.50 0.20 80 0.10 60 10 -3 40 0.05 single pulse 0.02 0.01 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Aug-27-2001 BSM 100 GD 120 DN2 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. Econo3 not connected: 16,18 9 Aug-27-2001