SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 1.4 Ω ID 3.2 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances 3 1 1 • Improved transconductance Type Package Ordering Code SPU03N60S5 P-TO251. Q67040-S4227 Marking 03N60S5 SPD03N60S5 P-TO252. Q67040-S4187 03N60S5 2 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 3.2 TC = 100 °C 2 Pulsed drain current, tp limited by Tjmax I D puls 5.7 Avalanche energy, single pulse EAS 100 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.2 mJ I D = 2.4 A, VDD = 50 V I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 3.2 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 38 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.1 Page 1 2004-03-30 3 SPU03N60S5 SPD03N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 3.3 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=3.2A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=135µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Rev. 2.1 µA Tj=25°C, - 0.5 1 Tj=150°C - - 70 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2A, Tj=25°C - 1.26 1.4 Tj=150°C - 3.4 - Page 2 nA 2004-03-30 SPU03N60S5 SPD03N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 1.8 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=2A Input capacitance Ciss V GS=0V, V DS=25V, - 420 - Output capacitance Coss f=1MHz - 150 - Reverse transfer capacitance Crss - 3.6 - Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 - Rise time tr ID=3.2A, RG=20Ω - 25 - Turn-off delay time t d(off) - 40 - Fall time tf - 15 22.5 - 3.5 - - 7 - - 12.4 16 - 8 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=350V, ID=3.2A VDD=350V, ID=3.2A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=3.2A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 3 2004-03-30 SPU03N60S5 SPD03N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 3.2 - - 5.7 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 1000 1700 ns Reverse recovery charge Qrr diF/dt=100A/µs - 2.3 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.054 R th2 Cth1 0.00005232 0.103 Cth2 0.0002034 R th3 0.178 Cth3 0.0002963 R th4 0.757 Cth4 0.0009103 R th5 0.682 Cth5 0.002084 R th6 0.202 Cth6 0.024 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2004-03-30 SPU03N60S5 SPD03N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 40 10 1 SPU03N60S5 W A 32 10 0 ID Ptot 28 24 20 16 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 12 8 4 0 0 20 40 60 80 100 °C 120 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 10 A K/W 10V 20V 12V 7 10 0 ID ZthJC 8 6 9V 5 8.5V 4 10 -1 8V 3 7.5V 2 7V 1 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Rev. 2.1 0 0 6.5V 5 10 15 V 25 VDS Page 5 2004-03-30 3 SPU03N60S5 SPD03N60S5 5 Drain-source on-state resistance 6 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 2 A, VGS = 10 V parameter: tp = 10 µs 8 SPU03N60S5 8 A 6 6 ID RDS(on) Ω 5 5 4 4 3 3 2 2 98% typ 1 1 0 -60 -20 20 60 °C 100 0 0 180 4 8 V 12 20 VGS Tj 7 Typ. gate charge 8 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 3.2 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPU03N60S5 V SPU03N60S5 A 0.2 VDS max 10 0 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 14 16 nC 19 QGate Rev. 2.1 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2004-03-30 SPU03N60S5 SPD03N60S5 9 Avalanche SOA 10 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 2.4 A, V DD = 50 V 3.5 120 A mJ Tj(START) =25°C IAR EAS 2.5 80 2 60 1.5 Tj(START) =125°C 40 1 20 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 20 4 40 60 80 100 120 °C 160 Tj 11 Drain-source breakdown voltage 12 Typ. capacitances V(BR)DSS = f (Tj) C = f (VDS) parameter: V GS=0V, f=1 MHz 720 10 4 SPU03N60S5 pF 680 10 3 Ciss 660 C V(BR)DSS V 640 10 2 Coss 620 600 10 1 580 Crss 560 540 -60 -20 20 60 100 °C 180 Tj Rev. 2.1 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS Page 7 2004-03-30 SPU03N60S5 SPD03N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 8 2004-03-30 SPU03N60S5 SPD03N60S5 P-TO-252-3-1 (D-PAK) P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.9 +0.08 -0.04 0.15 max per side 9.3 ±0.4 C B 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 0.5 +0.08 -0.04 3 x 0.75 ±0.1 2.28 4.56 1.0 0.25 M A B C GPT09050 All metal surfaces tin plated, except area of cut. Rev. 2.1 Page 9 2004-03-30 SPU03N60S5 SPD03N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 10 2004-03-30