SPW47N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Type Package Ordering Code Marking SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 °C 47 TC = 100 °C 30 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS Unit 141 1800 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 20 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-11-06 SPW47N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 47 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=2700µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 25 Tj=150°C - - 250 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=30A, Tj=25°C - 0.06 0.07 Tj=150°C - 0.16 - f=1MHz, open Drain - 0.62 - Page 2 nA 2003-11-06 SPW47N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 40 - S pF ID=30A Input capacitance Ciss V GS=0V, V DS=25V, - 6800 - Output capacitance Coss f=1MHz - 2200 - Reverse transfer capacitance Crss - 145 - - 193 - - 412 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 18 - Rise time tr ID=47A, RG =1.8Ω, - 27 - Turn-off delay time td(off) Tj=125 - 111 165 Fall time tf - 8 12 - 24 - - 121 - - 252 320 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=350V, ID=47A V DD=350V, ID=47A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=350V, ID=47A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-11-06 SPW47N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 47 - - 141 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =350V, IF=IS , - 580 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 23 - µC Peak reverse recovery current I rrm - 73 - A Peak rate of fall of reverse di rr/dt - 900 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.002689 Rth2 Cth1 0.001081 0.005407 Cth2 0.004021 Rth3 0.011 Cth3 0.005415 Rth4 0.054 Cth4 0.014 Rth5 0.071 Cth5 0.025 Rth6 0.036 Cth6 0.158 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-11-06 SPW47N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 500 10 3 SPW47N60C3 A W 10 2 400 ID Ptot 350 300 10 1 250 10 0 200 150 10 -1 100 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 50 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 1 10 280 K/W 20V A 7.5V 200 7V ID ZthJC 10 0 10 -1 160 6.5V 10 120 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 -3 6V 80 5.5V 40 5V 4.5V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 Page 5 0 0 4 8 12 16 20 26 V VDS 2003-11-06 3 SPW47N60C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 160 0.5 20V Ω A 4V 4.5V 5V 6.5V RDS(on) ID 120 6V 100 5.5V 80 0.4 5.5V 0.35 0.3 6V 60 0.25 5V 40 6.5V 0.2 4.5V 20 20V 0.15 4V 0 0 4 8 12 16 20 0.1 0 26 V VDS 20 40 60 80 100 A 160 ID 120 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 47 A, VGS = 10 V parameter: tp = 10 µs 0.38 SPW47N60C3 280 Ω A 25°C 0.28 200 0.24 ID RDS(on) 0.32 160 0.2 120 0.16 150°C 0.12 80 98% 0.08 typ 40 0.04 0 -60 -20 20 60 100 °C 180 Tj Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2003-11-06 SPW47N60C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 47 A pulsed parameter: Tj , tp = 10 µs 16 10 3 SPW47N60C3 V SPW47N60C3 A 10 2 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 40 80 120 160 200 240 280 320 nC 10 0 0 400 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Typ. drain current slope 12 Typ. switching time di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, ID=47A par.: V DS=380V, VGS=0/+13V, ID=47 A 10 3 6000 td(off) ns 10 2 4000 tf t di/dt A/µs td(on) di/dt(on) 3000 tr 10 1 2000 1000 0 0 di/dt(off) 2 4 6 8 10 12 14 16 Ω RG 20 Page 7 10 0 0 2 4 6 8 10 12 14 16 Ω 20 RG 2003-11-06 SPW47N60C3 13 Typ. switching time 14 Typ. drain source voltage slope t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, RG =1.8Ω par.: V DS=380V, VGS=0/+13V, ID=47A 10 3 80 ns V/ns td(off) dv/dt(off) 10 2 dv/dt 60 t td(on) 10 1 50 40 tf 30 tr 10 0 20 dv/dt(on) 10 10 -1 0 10 20 A 30 0 0 50 2 4 6 8 10 12 14 16 ID Ω 20 RG 15 Typ. switching losses 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =1.8Ω par.: V DS=380V, VGS=0/+13V, ID=47A 0.4 1.4 *) Eon includes SDP06S60 diode commutation losses. *) Eon includes SDP06S60 diode commutation losses. mWs mWs E E 1 Eoff 0.8 Eoff 0.2 0.6 Eon* Eon* 0.4 0.1 0.2 0 0 10 20 30 A 50 ID Page 8 0 0 2 4 6 8 10 12 14 16 Ω 20 RG 2003-11-06 SPW47N60C3 17 Avalanche SOA 18 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 20 1800 A mJ 16 1400 EAS IAR 14 12 1200 1000 10 800 8 600 6 400 4 200 2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 25 4 50 75 100 °C 150 Tj 19 Drain-source breakdown voltage 20 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=1mJ 720 SPW47N60C3 500 V PAV V(BR)DSS 680 660 300 640 620 200 600 580 100 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 Hz 10 f Page 9 2003-11-06 6 SPW47N60C3 21 Typ. capacitances 22 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 30 pF µJ Ciss C Eoss 10 4 10 3 20 15 Coss 10 10 2 Crss 5 10 1 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS 23 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS ; ID = 2.7 mA 4.25 VGS(th) V max. 3.25 typ. 2.75 min. 2.25 1.75 1.25 -75 -50 -25 0 25 50 75 100 125 °C Tj 175 Page 10 2003-11-06 SPW47N60C3 Definition of diodes switching characteristics Page 11 2003-11-06 SPW47N60C3 P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 12 2003-11-06 SPW47N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2003-11-06