PD- 91802A
IRF7353D1
FETKY MOSFET / Schottky Diode
Co-packaged HEXFET® Power MOSFET
and Schottky Diode
● Ideal For Buck Regulator Applications
● N-Channel HEXFET
● Low VF Schottky Rectifier
● Generation 5 Technology
● SO-8 Footprint
Description
●
A
A
S
G
1
8
K
2
7
K
3
6
4
5
VDSS = 30V
RDS(on) = 0.029Ω
D
D
Schottky Vf = 0.39V
T op V ie w
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current ➃
Pulsed Drain Current ➀
Power Dissipation ➃
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
Units
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
Units
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
➂ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➃ Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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1
3/17/99
IRF7353D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.023
0.032
—
14
—
—
—
—
22
2.6
6.4
8.1
8.9
26
17
650
320
130
Max. Units
Conditions
—
V
V GS = 0V, ID = 250µA
0.032
VGS = 10V, ID = 5.8A
Ω
0.046
VGS = 4.5V, ID = 4.7A
—
V
VDS = VGS, ID = 250µA
—
S
VDS = 24V, ID = 5.8A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 55°C
100
VGS = 20V
nA
-100
V GS = -20V
33
ID = 5.8A
3.9
nC
VDS = 24V
9.6
VGS = 10V (see figure 8)
12
VDD = 15V
13
ID = 1.0A
ns
39
RG = 6.0Ω
26
R D = 15Ω
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Qrr
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ. Max. Units
—
2.5
A
—
30
0.78 1.0
V
45
68
ns
58
87
nC
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
IF(av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7
A
1.9
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7353D1
Power Mosfet Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
T J = 150°C
10
V D S = 10V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
V G S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1
V D S , Drain-to-Source Voltage (V)
V D S , Drain-to-Source Voltage (V)
5.0
A
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7353D1
Power Mosfet Characteristics
V G S = 4.5V
0.036
0.032
0.028
0.024
V G S = 10V
0.020
0
10
20
30
40
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.040
0.12
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
0
I D , Drain Current (A)
900
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
C oss
600
C rss
0
A
1
10
V D S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
4
12
15
ID = 5.8A
VDS = 15V
C iss
300
9
Fig 6. Typical On-Resistance Vs. Gate
Voltage
VGS , Gate-to-Source Voltage (V)
C , Capacitance (pF)
V GS
C is s
C rs s
C o ss
6
V G S , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain
Current
1200
3
100
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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A
IRF7353D1
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
I S D , Reverse Drain Current (A)
100
T J = 150°C
10
TJ = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
V S D , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D1
Schottky Diode Characteristics
Reverse Current - IR (mA)
100
TJ = 150°C
10
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
5
10
15
20
25
30
1
Reverse Voltage - V R (V)
T J = 1 5 0 °C
T J = 1 2 5 °C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 2 5°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
F o rw a rd V o lta g e D ro p - V F M (V )
Forward Voltage Drop - VF (V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A llow able A m b ient Tem p era ture - (°C )
In s ta n ta n e o u s F o rw a rd C u r re n t - I F (A )
10
160
V r = 8 0 % R ated
R t hJA = 6 2 .5° C /W
Sq u are w ave
140
120
100
D
D
D
D
D
80
60
= 3 /4
= 1 /2
= 1 /3
= 1 /4
= 1 /5
DC
40
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v era ge F orw ard C urrent - I F (AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7353D1
SO-8 Package Details
D IM
D
-B -
5
E
-A -
5
θ
8
7
6
5
1
2
3
4
e
6X
H
0.2 5 (.0 10 )
M
A
A M
θ
e1
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
K x 45 °
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
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IRF7353D1
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .484 )
11 .7 ( .461 )
8.1 ( .31 8 )
7.9 ( .31 2 )
F E E D D IR E C T IO N
N OTE S :
1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R.
2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 .
33 0.00
(12 .992 )
M AX .
14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
NOTES :
1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.
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Data and specifications subject to change without notice. 3/99
8
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