IRF IRF7607

PD - 93845
IRF7607
PROVISIONAL
HEXFET® Power MOSFET
Trench Technology
● Ultra Low On-Resistance
● N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
●
A
A
D
1
8
S
2
7
D
S
3
6
D
4
5
D
S
G
VDSS = 20V
RDS(on) = 0.030Ω
T o p V ie w
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
6.5
5.2
50
1.8
1.2
0.014
± 12
-55 to + 150
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
70
°C/W
1
1/19/00
IRF7607
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.60
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
3.5
8.5
11
36
16
1310
150
36
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.030
VGS = 4.5V, ID = 6.5A ‚
Ω
0.045
VGS = 2.5V, ID = 5.2A ‚
1.0
V
V DS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 6.5A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
-100
V GS = -12V
nA
100
VGS = 12V
22
ID = 6.5A
3.3
nC
VDS = 10V
5.3
VGS = 5.0V ‚
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
R D = 10Ω ‚
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
1.8
–––
–––
50
–––
–––
–––
–––
19
13
1.2
29
20
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, I F = 1.7A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. (See fig. 11)
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7607
PROVISIONAL
100
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
10
1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
1.50V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
2.5
3.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
1.5
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.5
ID = 5.3A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7607
2000
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C iss
1200
800
400
Coss
Crss
0
1
ID = 6.5A
5.3A
VDS = 10V
VGS , Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
PROVISIONAL
8
6
4
2
0
10
0
100
4
8
12
16
20
24
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.6
10
1.2
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7607
6.0
0.20
5.0
0.10
VGS(th) , Variace ( V )
I D , Drain Current (A)
PROVISIONAL
4.0
3.0
2.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
1.0
-0.40
0.0
25
50
75
100
125
150
-50
-25
0
TC , Case Temperature ( ° C)
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7607
R DS ( on) , Drain-to-Source On Resistance ( Ω )
PROVISIONAL
R DS(on) , Drain-to -Source Voltage ( Ω )
0.040
0.035
0.030
0.025
Id = 5.3A
0.020
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
6
8.0
0.10
0.08
0.06
0.04
VGS= 2.5V
VGS = 4.5V
0.02
0
10
20
30
40
ID, - Drain Current (A )
Fig 13. Typical On-Resistance Vs.
Drain Current
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IRF7607
PROVISIONAL
Micro8 Package Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL L IM E T E R S
M IN
M AX
M IN
MAX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0.18
D
.1 1 6
.1 2 0
2 .9 5
3.05
e
.0 2 5 6 B A S IC
0 .6 5 B A S IC
e1
.0 1 2 8 B A S IC
0 .3 3 B A S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 .0 3
e
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B -
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G L E
DUAL
8 7 6 5
3
H
E
0 .2 5 (.0 1 0 )
-A -
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
( .0 4 1 )
8X
A
-C B
0 .1 0 (.0 0 4 )
A 1
8X
0 .0 8 (.0 0 3 )
M
C A S
L
8X
B
S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4 .2 4
5 .2 8
( .1 6 7 ) ( .2 0 8 )
N O TE S :
1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 .
0 .6 5 6 X
( .02 5 6 )
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H .
Micro8 Part Marking Information
D A T E C O D E (YW W ) A
Y = LA ST D IG IT O F YEA R
W W = W EE K
EX AM PLE : T H IS IS A N IR F 7501
45 1
75 01
P AR T N U M B ER
TOP
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7
IRF7607
PROVISIONAL
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N OTES:
1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1.
2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R.
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
1/2000
8
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