IRF IRF7750

PD - 93848A
IRF7750
HEXFET® Power MOSFET
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
VDSS = -20V
RDS(on) = 0.030Ω
TSSOP-8
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for, provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
±4.7
±3.8
±38
1.0
0.64
0.008
± 12
-55 to + 150
V
W/°C
V
°C
Max.
Units
125
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
5/25/2000
IRF7750
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, I D = -250µA
0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.030
VGS = -4.5V, I D = -4.7A ‚
Ω
––– 0.055
VGS = -2.5V, I D = -3.8A ‚
––– -1.2
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -4.7A
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 70°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
26
39
ID = -4.7A
3.9 5.8
nC
VDS = -16V
8.0
12
VGS = -5.0V‚
15 –––
VDD = -10V
54 –––
ID = -1.0A
ns
180 –––
RD = 10Ω
210 –––
RG = 24Ω ‚
1700 –––
VGS = 0V
380 –––
pF
VDS = -15V
270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.0
–––
–––
-38
–––
–––
–––
–––
26
16
-1.2
39
24
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t<10 sec
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7750
1000
1000
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
100
10
-1.50V
1
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
TOP
1
10
100
-VDS , Drain-to-Source Voltage (V)
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
TJ = 25 ° C
TJ = 150 ° C
10
10
TJ = 150 ° C
1
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
1
1.5
2.0
2.5
3.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7750
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
2000
10
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
2500
Ciss
1500
1000
500
Coss
Crss
ID = -4.7A
V DS =-16V
8
6
4
2
0
0
1
10
0
100
10
20
30
40
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1.00
1000
0.80
100
-II D , Drain Current (A)
-V GS(th) , Variace ( V )
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID = -250µA
0.60
0.40
100us
10
1ms
10ms
1
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.20
-75
-50
-25
0
25
50
75
100 125
T J , Temperature ( °C )
Fig 7. Threshold Voltage Vs. Temperature
4
10us
150
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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5.0
20
4.0
16
3.0
12
Power (W)
-ID , Drain Current (A)
IRF7750
2.0
1.0
8
4
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
0
0.01
0.10
1.00
10.00
100.00
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = -4.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
R DS (on) , Drain-to-Source On Resistance ( Ω)
IRF7750
0.08
0.06
VGS = -2.5V
0.04
0.02
VGS = -4.5V
0.00
0
TJ , Junction Temperature ( °C)
20
30
40
-I D , Drain Current (A)
Fig 12. Normalized On-Resistance
Vs. Temperature
R DS(on) , Drain-to -Source On Resistance ( Ω )
10
Fig 13. Typical On-Resistance Vs. Drain
Current
0.08
0.06
0.04
ID = -4.7A
0.02
0.00
2.0
2.5
3.0
3.5
-V GS, Gate -to -Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
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IRF7750
TSSOP-8 Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 5/2000
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