BSO200N03 OptiMOS®2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS(on),max 20 mΩ ID 7.9 A 1 • Qualified according to JEDEC for target applications • Dual n-channel • Logic level P-DSO-8 • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated • Pb-free plating; RoHS compliant Type Package Marking BSO200N03 PG-DSO-8 200N3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Value Symbol Conditions ID Unit 10 secs steady state T A=25 °C2) 7.9 6.6 T A=70 °C2) 6.3 5.3 A Pulsed drain current I D,pulse T A=25 °C3) 32 Avalanche energy, single pulse E AS I D=7.9 A, R GS=25 Ω 27 mJ Reverse diode dv /dt dv /dt I D=7.9 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ±20 T A=25 °C2) 1.4 -55 ... 150 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.2 2.0 V page 1 2006-05-09 BSO200N03 Parameter Values Symbol Conditions Unit min. typ. max. - - 50 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area2), t p≤10 s - - 63 6 cm2 cooling area2), steady state - - 90 30 - - Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=13 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=6.8 A - 21.7 27 mΩ V GS=10 V, I D=7.9 A - 16.7 20 - 1.5 - Ω 9 18 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=7.9 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.2 See figure 3 page 2 2006-05-09 BSO200N03 Parameter Values Symbol Conditions Unit min. typ. max. - 756 1010 - 270 360 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 37 56 Turn-on delay time t d(on) - 3.9 5.8 Rise time tr - 3.2 4.8 Turn-off delay time t d(off) - 14 22 Fall time tf - 2.2 3.3 Gate to source charge Q gs - 2.2 2.9 Gate charge at threshold Q g(th) - 1.2 1.6 Gate to drain charge Q gd - 1.5 2.3 Switching charge Q sw - 2.5 3.5 Gate charge total Qg - 6 8 Gate plateau voltage V plateau - 2.9 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 5.1 7 nC Output charge Q oss V DD=15 V, V GS=0 V - 6 8 - - 2 - - 32 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=3.9 A, R G=2.7 Ω pF ns Gate Charge Characteristics 4) V DD=15 V, I D=3.9 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=2 A, T j=25 °C - 0.77 1 V Reverse recovery charge Q rr V R=12 V, I F=I S, di F/dt =400 A/µs - - 8 nC 4) Rev. 1.2 T A=25 °C A See figure 16 for gate charge parameter definition page 3 2006-05-09 BSO200N03 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); V GS≥10 V; t p≤10 s 10 2 8 1.5 6 I D [A] P tot [W] 2.5 1 4 0.5 2 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 160 T A [°C] 102 100 100 1 µs 10 µs 0.5 100 µs 101 10 10 ms 1 ms 0.2 100 limited by on-state resistance 1 10 0.1 Z thJS [K/W] I D [A] 101 0.05 0.02 100 10-1 1 0.01 0.1 DC single pulse 10-2 0.1 10 Rev. 1.2 10-1 0.01 1 -1 10 10 0 V DS [V] 10 100 1 10 2 page 4 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] 2006-05-09 BSO200N03 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 12 40 10 V 4.5 V 3.4 V 3.3 V 3.6 V 3.8 V 4V 30 3.2 V 4.2 V R DS(on) [mΩ] 8 I D [A] 3.1 V 3V 4.5 V 5V 20 10 V 4 10 2.8 V 2.6 V 0 0 0 1 2 3 0 10 V DS [V] 20 30 20 30 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 30 40 25 30 g fs [S] I D [A] 20 15 20 10 10 5 125 °C 25 °C 0 0 0 1 2 3 4 Rev. 1.2 0 10 I D [A] V GS [V] page 5 2006-05-09 BSO200N03 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.9 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 35 2.5 30 2 25 130 µA 20 V GS(th) [V] R DS(on) [mΩ] 98 % typ 15 1.5 13 µA 1 10 0.5 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 100 Ciss 98%, 150 °C Coss 10 150 °C 98%, 25 °C I F [A] C [pF] 25 °C 102 1 Crss 101 0 0 10 20 30 Rev. 1.2 0.0 0.5 1.0 1.5 V SD [V] V DS [V] page 6 2006-05-09 BSO200N03 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=3.9 A pulsed parameter: T j(start) parameter: V DD 10 12 125 °C 15 V 10 25 °C 100 °C 6V 24 V V GS [V] I AV [A] 8 1 6 4 2 0.1 0 1 10 100 1000 0 4 8 12 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 38 V GS 36 Qg 34 V BR(DSS) [V] 32 30 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2006-05-09 BSO200N03 Package Outline PG-DSO-8 P-DSO-8: Outline Footprint Packaging Tape Tube Rev. 1.2 page 8 2006-05-09 BSO200N03 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2006-05-09